[PDF] Top 20 Spin splitting in p type Ge devices

... considerably larger than the lateral depletion width, deter- mined to be 0.5 6 0.1 lm in narrow wire arrays. 10 Narrow mesas from 3lm to 1 lm structural width were also fabricated in this undoped material and are ... See full document

... crystals and thin films. However this hypothesis seems to be questionable as hybrid functional density calculations predict the oxygen vacancy to be a deep donor with ionization energy higher than 1 eV [29]. Higher ... See full document

... new devices using advanced technology of silicon micro- electronics [1 – ...of Ge/Si heterostructures (pri- marily designed for the spectral range of ...Such devices may be used in optoelectronic ... See full document

... applying a gate voltage in a transistor-type device, induces a counterintuitive lowering of the surface chemical potential concomitant with the formation of a multi-valley two-dimensional electron gas (2DEG). ... See full document

... electronic type are lower power consumption and higher data processing speeds 1 ...the spin field effect transistor (FET) which utilizes the Rashba spin ...the spin orbit coupling in a way ... See full document

... of spin-orbit interaction (SOI) on both approximations and also compared the ...the splitting of degenerate valence band occurs on high symmetry ...the splitting energy and our results are similar to ... See full document

... through the equivalence of a spin valve effect. Notably, this effect would not be possible in a bare polymer without the Co complex. All the above results refer to the polymer in the ferromagnetic order. The ... See full document

... and spin-based quantum information [1-3]. In those fields, the spin-orbit coupling (SOC) plays a key role on the properties of spin states in bulk and low- dimensional semiconductor ...field ... See full document

... However, the GMR effect is not necessarily the most effective way to generate high resistance differences under influence of an external magnetic field [2] and only a limited number of material combinations are possible. ... See full document

... well-defined spin- splitting is maintained up to well above room temperature, as shown in ...for devices based on more conventional semiconductors ...practical devices, and to inte- grate ... See full document

... and Ge, continue to attract tremendous attention in spintronics due to their suppression of spin ...and Ge precludes the spin relaxation of conduction electrons by the Dyakonov-Perel mechanism ... See full document

... The DELTA research group has been moving towards the use of an Interactive Diagnostic Assessment System (IDAS; Confrey, Hasse, Maloney, Nguyen & Varela, 2011) for LT-based assessments trajectories. We aim to ... See full document

... croelectronic devices such as the ubiquitous semiconduc- tor transistor [1], but also provides a mechanism for sta- bilising new physical ...the spin-degeneracy of its elec- tronic states via the so-called ... See full document

... comparison to ferromagnets.) Haney et al. 90 have shown that an antiferromagnet can also generate a torque on a ferromagnet. Similarly to ferromagnets, a spin-transfer torque is also predicted to occur for an ... See full document

... at fields as low as B = 0.235 T for the measurement at 300 mK, with spin splitting appearing above B = 0.36 T (as indicated by the arrows in Figure 5.14). As the temperature increases the oscillation ... See full document

... neutron spin polarization ...ˆ p = (sin θ cos φ, sin θ sin φ, cos θ), where θ and φ are the colatitude and azimuthal angles in the ...the spin-isospin summation of the squared amplitude, we ... See full document

... The Bloch NMR model has over the years proven to be a good diagnostic tool for investigating properties of known quantities. For example, the Bloch NMR equations has shown good success in the study biological and physio- ... See full document

... amorphous p-type TCO can not be made, it will be a tougher challenge, as the VBM will typically be composed with some fraction of directional O-2 p ... See full document

... In the present paper, the quantum mechanical behavior of a reverse biased nano-scale p-n junction based on Si/Si 0.4 Ge 0.6 /Si quantum well has been studied by obtaining the self-consistent solution of ... See full document

... body systems of ultra-cold atoms can be precisely controlled experimentally and can provide an ideal platform on which one can study SO coupling. Although an atom’s intrinsic SO coupling affects its electronic structure, ... See full document