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amorphous Si:B

Compressive Deformation of Partially Crystallized Amorphous Si B C N Ceramics at Elevated Temperatures

Compressive Deformation of Partially Crystallized Amorphous Si B C N Ceramics at Elevated Temperatures

... dense Si–C–N ceramic monolith by hot isostatically pressing the compacts ofamorphous ceramic powder derived from ...the amorphous phase in the monolith crystallized during the hot isostatic pressing ...the ...

6

Atomic Structure and Diffusion in Amorphous Si B C N
by Molecular Dynamics Simulation

Atomic Structure and Diffusion in Amorphous Si B C N by Molecular Dynamics Simulation

... of amorphous SiB–C–N ...in amorphous SiB–C–N, from their experimental observations of the microstructures after ...of amorphous SiB–C–N, however, it is ...

6

Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles

Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles

... So far, a great deal of research has been done on the de- velopment of alternative energies, such as solar energy, since fossil fuels are non-renewable [1–3]. Among the device types of photovoltaic cells, much effort has ...

6

Oxygen Absorption in Free Standing Porous Silicon: A Structural, Optical and Kinetic Analysis

Oxygen Absorption in Free Standing Porous Silicon: A Structural, Optical and Kinetic Analysis

... Abstract Porous silicon (PSi) is a nanostructured mate- rial possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and ...

6

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

... drain (S/D) regions at 30 KeV with a dose of 1 × 10 15 cm − 2 . Non-self-aligned S/D metals of 15-nm nickel were formed by lift-off process. Finally, rapid thermal annealing at 400 °C was carried out for dopant activa- ...

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Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

... films as a function of time at various annealing temperatures. At all temperatures there is a rapid ~, 5 s resolution of RTA technique ! initial reaction followed by a rate which is highly deceleratory. On this time ...

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Crystallization of polycrystalline silicon thin film by excimer laser annealing

Crystallization of polycrystalline silicon thin film by excimer laser annealing

... This research focuses on enhancing the crystallization process that specifies the material used as specimen, the equipment employed in conducting the experiment and technique for analysis. Basically, glass slide was ...

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Using surface and interface optics to probe the capping, with amorphous Si, of Au atom chains grown on vicinal Si(111)

Using surface and interface optics to probe the capping, with amorphous Si, of Au atom chains grown on vicinal Si(111)

... vicinal Si(111) substrates, have been identified using reflectance anisotropy spectroscopy ...of amorphous Si (a-Si) at room temperature perturbs the anisotropic optical response of the double ...

5

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

... efficiency (PCE) [1-6]. By forming a rough surface mor- phology on the front transparent electrode, however, the incident light is scattered; thereby increasing the light path length and the probability of light being ...

6

Nanometric Cutting of Silicon with an Amorphous Crystalline Layered Structure: A Molecular Dynamics Study

Nanometric Cutting of Silicon with an Amorphous Crystalline Layered Structure: A Molecular Dynamics Study

... The amorphous phase is prepared by quenching ...the amorphous structure would be ...the amorphous model. During this procedure, a c-Si bulk is heated and melts at 3200 K during ...and ...

10

Electrodeposition of Si and Sn based amorphous films for high energy novel electrode materials

Electrodeposition of Si and Sn based amorphous films for high energy novel electrode materials

... The electrodeposition of silicon films from organic propylene carbonate electrolytes has shown initial challenges in obtaining homogeneous and stable amorphous silicon films. Clearly to generate stable anodes for ...

8

Computer Simulation of Precipitation Process in Si/Ge Amorphous Multi Layer Films: Effects of Cu Addition

Computer Simulation of Precipitation Process in Si/Ge Amorphous Multi Layer Films: Effects of Cu Addition

... Cu-added amorphous Si/Ge multilayer films by a molecular dynamics ...prepared: Si/Ge, Si/(Ge + Cu), (Si + Cu)/(Ge + Cu) and ...the Si/(Ge + Cu) system, Ge did not diffuse into the ...

5

Hydrogen Internal Friction Peak in Amorphous Zr Cu Al Si Alloys

Hydrogen Internal Friction Peak in Amorphous Zr Cu Al Si Alloys

... the amorphous structure of the a-alloy is composed of a low density region and a high den- sity region reflecting the density fluctuation, and the stress- induced internal rearrangement of atoms started in the low ...

8

The optimization of heating temperature for carbon extraction from peat soil

The optimization of heating temperature for carbon extraction from peat soil

... Figure 2 (a-b) shows the morphology structure of the sample from SEM untreated and treated at 400°C baking temperature. Figure 2(a) shows the surface of untreated peat soil that has a rough surface area. This ...

8

Improved Thermal Stability of Amorphous ZrAlCuNi Alloys with Si and B

Improved Thermal Stability of Amorphous ZrAlCuNi Alloys with Si and B

... clean amorphous matrix (with minimum nuclei) in a 3D manner at lower temperatures and would grow in a more rapid and disordered 2D or even 1D way at higher ...

5

Excimer Laser Annealing of Hydrogen Modulation Doped a Si Film

Excimer Laser Annealing of Hydrogen Modulation Doped a Si Film

... The depth profiles of the H concentration for an a-Si film on a glass substrate (sample C) with and without ELA by TOF-SIMS are shown in Fig. 11. For the a-Si film without ELA, the H concentration in the ...

5

Relationship between Microstructures and Soft Magnetic Properties of Simultaneously P and Cu Added Fe Nb B Ribbon Alloys

Relationship between Microstructures and Soft Magnetic Properties of Simultaneously P and Cu Added Fe Nb B Ribbon Alloys

... applied field of 800 kA/m was measured by a vibrating samples magnetometer and a dc B-H loop tracer. Thin specimens for TEM observations were prepared using by the ion-milling. Electron diffraction patterns, ...

5

Phase Stability of an Amorphous Phase Against Electron Irradiation Induced Crystallization in Fe Based Metallic Glasses

Phase Stability of an Amorphous Phase Against Electron Irradiation Induced Crystallization in Fe Based Metallic Glasses

... Electron irradiation is known to be an effective method for solid-state amorphization (SSA) of crystalline phase due to mechanical atomic displacement induced crystal-to-glass (C- G) transition. Mori et al. reported that ...

10

Field Electron Emission from a CNx:H Films Formed on Al Films Using Supermagnetron Plasma CVD

Field Electron Emission from a CNx:H Films Formed on Al Films Using Supermagnetron Plasma CVD

... of amorphous carbon films have attracted considerable attention due to their promising applicability to cold-cathode materials in future-generation high-performance electronic devices, such as display devices and ...

7

Characterization of High-k Gate Stacks in Metal-Oxide-Semiconductor Capacitors

Characterization of High-k Gate Stacks in Metal-Oxide-Semiconductor Capacitors

... The purpose of this research has been to use off-line characterization techniques to establish material-specific properties of gate-stack constituents (i.e., high-κ dielectric stacks and electrodes) and complete ...

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