Ba/Ge/Sn
Microstructure, mechanical and thermal properties of chalcogenide glasses and glass-ceramics based on Se-As-Ge system nucleated by Sn
... (x=0, 2, 4 and 6) (listed in Table 1) by the conventional melt quenching technique. This glassy system is one of the functional and commercial combinations. In addition to four main components of Se-As-Ge- ...
8
Influence of growth kinetics on Sn incorporation in direct band gap Ge₁-xSnx nanowires
... the dominance of indirect transitions at low temperature with this Sn content is observed. The temperature dependent PL displays an increase of intensity with increasing temperature; indicative of an indirect ...
19
Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials
... Abstract. Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research attention as possible direct band gap semiconductors with prospective applications in optoelectronics. The ...
15
Influence of growth kinetics on Sn incorporation in direct band gap Ge₁-xSnx nanowires
... of Ge and Sn in the catalysts, with both catalysts decomposing below 425 ...lower Sn content in the nanowires compared to the nanowires grown at 440 °C (Figure 1(e)) could be a direct result of the ...
38
Full Potential KKR Calculations for Lattice Distortion Effect of Point Defect in bcc Fe Dilute Alloys, Based on the Generalized Gradient Approximation
... For the magnetism of II pairs, we found that the magnetic moments of the single impurities (I = Sc ³ Ge) do not change very much by the pairing of II, except Mn. For a MnMn pair in bcc-Fe, there are two ...
9
Synthesis of Germanium Tin Alloys by Ion Implantation and Pulsed Laser Melting: Towards a Group IV Direct Band Gap Semiconductor
... a Ge-Sn alloy with a quality suitable for device applications is challenging for several ...of Sn in ...the Ge-Sn system and constructed an equilibrium phase diagram of the alloy as ...
150
The Characterization and Study of Physical Parameters of Ge Modified Se Sn Pb Chalcogenide System
... Chalcogenide glasses possess properties intermediate between organic polymers and oxide glasses. These gla- sses are less robust, more weakly bonded materials than oxides [4].The amorphous semiconductor like chalco- ...
6
Effect of Trace Ge on Wettability and High Temperature Oxidation Resistance of Sn 0 7Cu Lead Free Solder
... Sn-Cu based lead-free solder mainly referred to the Sn- 0.7Cu eutectic alloy whose melting temperature was 227C and soldering temperature was generally higher than 260C. However, the wettability and the ...
6
Theoretical Investigation of Structural, Electronic, and Mechanical Properties of Two Dimensional C, Si, Ge, Sn
... phene near the Fermi level. Hence we can infer that the electrons in silicene, germanene and stenane will be more localized than the electrons in graphene near the Fermi level. Therefore the strength of C-C bond of gra- ...
13
Impact Properties of Lead Free Sn Ag Cu Ni Ge Solder Joint with Cu Electrode
... m/s). In the case of slow shear speed, SA, SAC and S3ACNG joints showed similar shear strength during aging at 393 K. Their values were lower than those of SACNG, SAC0.15NG and SAC0.25NG until the aging time was over 600 ...
5
Reliability of Solder Joint with Sn Ag Cu Ni Ge Lead Free Alloy under Heat Exposure Conditions
... Cu, Sn and Ni atoms are detected in dark-gray phases observed in a back-scattered electron ...the Sn–Ag–Cu solder induces the growth of Cu–Sn compounds in the solder under heat exposure ...
8
Ab Initio Study of Binary and Ternary Nb₃(X,Y) A15 Intermetallic Phases (X,Y = Al, Ge, Si, Sn)
... Elastic and thermodynamic properties of binary and ternary A15 phases containing Al, Ge, Si and Sn were studied using the first-principles pseudopotential plane-wave method based on density functional ...
27
Metallurgy and Kinetics of Liquid Solid Interfacial Reaction during Lead Free Soldering
... the Sn–Pb eutectic solder, lead-free soldering with Sn–Ag–Cu alloys requires a relatively narrow process window due to the higher processing temperatures and generally poor ...of Sn–Pb eutectic ...
9
Reversible oxidative insertion of a C=C bond into magnesium(I) dimers : generation of highly active 1,2 dimagnesioethane compounds
... to be the domain of the d-block metals. 1 Because such activations typically involve irreversible oxidation of the p-block center (yielding thermodynamically stable products), it has proved difficult to incorporate them ...
13
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
... the Sn content range from 0 to 8% using the reflection high-energy electron diffraction ...fixed Ge content in the Sn content range from 0 to ...of Sn on Si and Ge(100) were ...[17–19], ...
8
Surface Energy of Diamond Cubic Crystals and Anisotropy Analysis Revealed by Empirical Electron Surface Models
... Diamond cubic crystals, including diamond (C), silicon (Si), germanium (Ge), and tin (Sn), are important materials for a wide range of applications because of their excellent properties. Diamond has the ...
9
Pb Ca Sn Ba Grid Alloys for Valve Regulated Lead Acid Batteries
... Pb-Sn-Ca alloys are most widely used for making grids of valve-regulated lead acid (VRLA) batteries. However, the high requirements to power sources entail the neces- sity of further modifications of the alloys ...
7
Fabrication and Investigation of Se-Ge Glass-Ceramics in the Presence of Ga and Sn Additives
... compositions are listed in Table 1. The amounts of 3, 5, and 7 %. mol of Sn were added to 3 different glass batches to create phase segregation and provide the conditions for crystallization. 1 %. mol of Ga ...
5
Solid State Synthesis of Ternary Thermoelectric Magnesium Alloy, Mg2Si1 xSnx
... Magnesium–tin system, was employed to describe the solid-state reaction process via the bulk mechanical alloying (BMA). Figure 1 depicted the variation of XRD profiles for the BMA samples with increasing the number of ...
8
Differentiation between disorders of consciousness and disorders of movement using functional MRI
... In the first examination, tennis imagery elicited a larger activation than SN in the left and right inferior parietal lobe (IPL), the secondary somatosensory cortex (Brodmann area (BA) 4[r] ...
6