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back-to-back Schottky diodes

Pressure contact multi chip packaging of SiC Schottky diodes

Pressure contact multi chip packaging of SiC Schottky diodes

... SiC Schottky diodes, unipolar devices with a low ZTC, this initial current imbalance caused by the non-uniform clamping force will be electrothermally ...

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Evaluation of SiC Schottky diodes using pressure contacts

Evaluation of SiC Schottky diodes using pressure contacts

... PiN diodes for enabling reverse conduction ...SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower ...

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Metal silicide/poly Si Schottky diodes for uncooled microbolometers

Metal silicide/poly Si Schottky diodes for uncooled microbolometers

... the Schottky barrier formation process proposed in [27] which enables production of poly-Si/Ni polycide Schottky diodes with rectification ratios as high as 10 6 ...form diodes nearly as ...

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Junction investigation of graphene/silicon Schottky diodes

Junction investigation of graphene/silicon Schottky diodes

... the Schottky junctions to harvest solar light more ...of Schottky barrier at the G/Si interface, partial carriers in Si substrates tend to move to the graphene side and consequently, the energy levels near ...

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Electronic Properties of Synthetic Shrimp Pathogens derived DNA Schottky Diodes

Electronic Properties of Synthetic Shrimp Pathogens derived DNA Schottky Diodes

... ation from ideal Schottky diode in which the values are more significant than 1. The ideality factor determined using Eq. (4) and Eq. (6) in method 1, was relatively larger compared to the values obtained in ...

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Analytical Studies of Metal Insulator Semiconductor Schottky Barrier Diodes

Analytical Studies of Metal Insulator Semiconductor Schottky Barrier Diodes

... of Schottky diode with an interfacial layerusing ...of Schottky diodes with thepresence of an interfacial layer between the metal andsemiconductor has been performed by calculating the totalcurrent ...

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Single nanowire based UV photodetectors for fast switching

Single nanowire based UV photodetectors for fast switching

... technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt ...the Schottky diode show clear rectifying behavior and no reverse breakdown was seen down to -5 ...

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Investigation of the Heat Absorption Capacity of Silicon Schottky and PN Junctions

Investigation of the Heat Absorption Capacity of Silicon Schottky and PN Junctions

... Over the past years, much effort has been put in TE materials research and progress has been made. However researchers like Brostow et al (2014) are of the opinion that significant increase in the performance of TE ...

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ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

... Cr/4H-SiC Schottky diodes are not convincing for the barrier height value, ideality factor and the role of the interface with respect to the change of thermal ...

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Investigation of vertically stacked hybrid devices

Investigation of vertically stacked hybrid devices

... the Schottky contacts between carbon and silicon have been thoroughly ...ance. Schottky diodes are frequently used as high-speed switching devices due to their sim ple structure and relatively fast ...

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Electrically active defects in novel Group IV semiconductors

Electrically active defects in novel Group IV semiconductors

... for Schottky diode fabrication by immersing the sample in OO3+H 2SO4 at 443K for 3 minutes, and then rinsing in a 1:1 boiling solution of H 2O2 (30 %) and NH 4OH (70 ...diamond Schottky diodes ...

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Experimental Study on Buckling Behaviour of Cold Formed Steel Sections

Experimental Study on Buckling Behaviour of Cold Formed Steel Sections

... Cold-formed build up channel sections of 1000 mm length and 200 mm depth is tested in a loading frame of capacity 400KN under axial loading condition for both back to back and face to face channel ...

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Characterization of graphene silicon Schottky barrier diodes using impedance spectroscopy

Characterization of graphene silicon Schottky barrier diodes using impedance spectroscopy

... a more reliable SBH value using a proper equivalent circuit model for the analysis. It is expected that this kind of approach to the investigation of graphene-based nanoscale devices will allow the interface of the ...

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A COMPARITIVE STUDY TO KNOW THE EFFECTIVENESS OF PRONE BACK EXTENSION EXRECISES AND SWISS BALL EXERCISES ON BACK EXTENSOR MUSCLES PERFORMANCE

A COMPARITIVE STUDY TO KNOW THE EFFECTIVENESS OF PRONE BACK EXTENSION EXRECISES AND SWISS BALL EXERCISES ON BACK EXTENSOR MUSCLES PERFORMANCE

... physiotherapy students, and the fact that a low Sorensen score increases the likelihood of back pain, this observa- tion is in accordance with Nyland LJ” [20] study on risk for low back pain in ...

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Recovery Performance of Ge Doped Vertical GaN Schottky Barrier Diodes

Recovery Performance of Ge Doped Vertical GaN Schottky Barrier Diodes

... Recently, a wide band gap semiconductor—such as GaN—with the inherent advantages, has attracted tremen- dous research attention for the next-generation electronics devices, particularly in the field of high frequency, ...

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Analysis of Unsymmetrical Building Resting on Sloping Ground by Dividing in 2D Frame

Analysis of Unsymmetrical Building Resting on Sloping Ground by Dividing in 2D Frame

... Step back and Step back-Set back buildings, base shear is higher for Step back-Setback building and lower for Step back building, lateral displacement of top story is maximum for ...

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Natural Product in Drug Discovery: Back to Future

Natural Product in Drug Discovery: Back to Future

... cut back on their use of natural products in drug discovery, there are many promising drug candidates in the current development pipeline that are of natural ...

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Utilization of Embedded Metal Nanostructures for Solar Cells

Utilization of Embedded Metal Nanostructures for Solar Cells

... gold has a work more noteworthy than the work capacity of the silicon, each of gold nano-particles frames a Schottky contact with the n-sort silicon and an Ohmic contact with the p-sort silicon. In this manner, ...

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Is back pain during childhood or adolescence associated with muscle strength, muscle endurance or aerobic capacity: three systematic literature reviews with one meta-analysis

Is back pain during childhood or adolescence associated with muscle strength, muscle endurance or aerobic capacity: three systematic literature reviews with one meta-analysis

... To our knowledge, this is the first review to explore sta- tus of the literature on the associations between back problem and BMS in trunk extension, BME in trunk ex- tension and AC, during childhood and ...

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State of art report on seismic response of setback profiles

State of art report on seismic response of setback profiles

... Abruptly as even the bottom of these structures becomes inclined at the slope. This deadly combination of geometrical irregularity, mass irregularity, stiffness irregularity, and torsional response makes the structures ...

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