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bottom gate thin-film transistor

Demonstration on Ferroelectric-gate Thin Film Transistor NAND-type Array with Disturbance-free Operation

Demonstration on Ferroelectric-gate Thin Film Transistor NAND-type Array with Disturbance-free Operation

... As reported previously, we succeeded to demonstrate an adequate operation of a ferroelectric-gate thin film transistor (FGT), whose channel and gate insulator are derived from a ...

7

Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel

Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel

... unit gate width is about ...simple transistor and the large output signal is obtained mainly due to the huge induced charge of the ferroelectric gate compensated to the small mobility of the sol-gel ...

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A water-gated organic thin film transistor as a sensor for water-borne amines

A water-gated organic thin film transistor as a sensor for water-borne amines

... We here extend this sensitivity of organic semiconductors to amines to the sensing of water- borne amines. Our sensor concept builds on the discovery of Berggren et al.[10] that organic thin film ...

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Temperature dependence of electronic behaviors in quantum dimension junctionless thin film transistor

Temperature dependence of electronic behaviors in quantum dimension junctionless thin film transistor

... shrink down channel thickness to be around 28 nm. The active layers, serving as channel, were defined by e-beam lithography and then mesa-etched by time-controlled wet etching of the buried oxide to release the poly-Si ...

5

An ionic liquid-gated polymer thin film transistor with exceptionally low "on" resistance

An ionic liquid-gated polymer thin film transistor with exceptionally low "on" resistance

... previously. 13,14 Ink viscosity and surface tension were 12 mPa s and 27–31 mN/m at room temperature, respectively. We used a JetLab 4xl printing system (Microfab, Inc., Plano, TX), equipped with a 60 lm diameter ...

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Development of low temperature oxidation for crystalline silicon thin film transistor applications

Development of low temperature oxidation for crystalline silicon thin film transistor applications

... The modified process flow first defined by Saxer and Manley was used to fabricate TFTs on bulk Si, SOI, and SiOG samples. Using 1x10 15 cm -2 p-type surface silicon SOI and SiOG substrates, a general outline of the ...

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Organic/Inorganic Nano hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

Organic/Inorganic Nano hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

... hybrid thin films and polymer dielectrics were spin-coated onto heavily doped n + Si substrates as dielectric layers and then ...aluminum film used as an electrode was de- posited directly onto the ...

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Enhancing the Performance of Organic Thin Film Transistors By Cross-Linking the Organic Gate Dielectric

Enhancing the Performance of Organic Thin Film Transistors By Cross-Linking the Organic Gate Dielectric

... Organic materials and their applications are one of the most important areas of contemporary science; including, electronics. One of the basic components of electronic devices is transistor. Initially they were ...

113

Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics

Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics

... Effect Transistor, OMESFET was proposed as alternatives to ...organic gate dielectrics [7], either in special low band-gap organic semiconductors, where the electrons mobility can reaches ...

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Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position

Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position

... the gate bias the traps will become full, and then any additional carriers will reduce the depletion width at either side of the GB and therefore lower the potential ...

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150°C amorphous silicon thin-film transistor technology for polyimide substrates

150°C amorphous silicon thin-film transistor technology for polyimide substrates

... metallization, were replaced with more ductile metals. The gate electrode was made of Ti/Cr and the source/drain contacts of Al. Figure 11 shows the transfer characteristic and the calculated mo- bilities as ...

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Analysis And Parameter Extraction Of Organic Transistor At PTAA With Different Organic Materials

Analysis And Parameter Extraction Of Organic Transistor At PTAA With Different Organic Materials

... only gate dielectric has been ...contact bottom gate organic thin film transistor with drain voltage varying with step of ...

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Solution processed metal oxide dielectrics and semiconductors for thin film transistor applications

Solution processed metal oxide dielectrics and semiconductors for thin film transistor applications

... 22 The most interesting field of metal oxides is that of high performance, fully transparent TFTs. The necessity of high performance and highly transparent TFTs has originated from the FPD market. The most common ...

297

Fabrication methods of organic thin film transistor for volatile organic compounds gas sensor

Fabrication methods of organic thin film transistor for volatile organic compounds gas sensor

... Patterning is a crucial part in the fabrication of OTFT. The organic semiconductor must be confined to the channel region to eliminate parasitic leakage and reduce cross-talk in order to achieve better device ...

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Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

... The transistor transfer and output characteristics were measured in a sweep ...the gate dielectric were measured using the capacitor structures fabricated alongside the ...the transistor performance ...

14

Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor

Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor

... 100 μm, respectively. The overall drain current responses linearly with drain biases, indicating an ohmic-like con- tact behavior of graphene/SWCNTs junctions. From the transfer characteristics of graphene-SWCNTs ...

6

Göllner, Martin
  

(2012):


	Double-Gate Pentacene Thin Film Transistors for Biosensing.


Dissertation, LMU München: Fakultät für Physik

Göllner, Martin (2012): Double-Gate Pentacene Thin Film Transistors for Biosensing. Dissertation, LMU München: Fakultät für Physik

... This type of biosensors measures the electrical conductivity of an analyte or a medium. Basically they can be divided in two different designs: The most common class of conducto- metric devices measures the change of ...

141

Design of transparent a-IGZO thin film transistor for AMOLED display

Design of transparent a-IGZO thin film transistor for AMOLED display

... Regarding operation and considering n-type TFTs, these can be designated by enhancement or depletion mode depending if threshold voltage (VT) is positive or negative. Enhancement mode is typically preferable because a ...

6

Photoelectrical Characteristics of UV Organic Thin-film Transistor Detectors

Photoelectrical Characteristics of UV Organic Thin-film Transistor Detectors

... organic thin-film transistor (photoOTFT) was fabricated and ...The gate dielectric acted as a sensing layer thanks to it strongly absorbs UV ...the gate electrode side. The current in ...

8

Influence of Temperature and Pentacene Thickness on the Electrical Parameters in Top Gate Organic Thin Film Transistor

Influence of Temperature and Pentacene Thickness on the Electrical Parameters in Top Gate Organic Thin Film Transistor

... top gate pentacene transistor fabricated on kapton ...effect transistor behavior with well-defined linear and satu- ration regimes with limited contact resistance although the transistor has a ...

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