buried heterostructure graded index separate confinement multiple quantum well lasers
High-Coherence Hybrid Si/III-V Semiconductor Lasers
... of lasers from two different ...other. Lasers represented in figure ...three lasers of figure ...the lasers on the deeper etched die being ...refractive index III-V, thus causing a net ...
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Phase-locked arrays of surface-emitting graded-photonic-heterostructure terahertz semiconductor lasers
... FDTD simulations (Figs. 2(b)-(d)) provide an insight into these phenomena. The simulations have been performed with the commercial code Lumerical. We investigate – when the total ring length changes by a value L – the ...
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Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers
... in quantum wells (QWs) by Kazarinov and Suris in 1971 [1], there has been considerable research effort in this ...unipolar lasers have been proposed, and some of them realized, the most important of which ...
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Single cell induced optical confinement in biological lasers
... extracellular lasers, lasing is typically obtained from fluorescent cells in suspension that are located between two highly reflective mirrors forming a Fabry – P é rot microcavity (see figure ...these ...
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Temperature Dependent High Speed Dynamics of Terahertz Quantum Cascade Lasers
... frequency quantum cascade lasers offer a potentially vast number of new ...these lasers, a device-specific modeling method was developed that realistically predicts optical output power un- der ...
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Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers
... Indjin, D., Ikonic, Z., Harrison, P. et al. (1 more author) (2003) Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers. ...
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Population inversion in optically pumped asymmetric quantum well terahertz lasers
... and quantum efficiency. For intersubband lasers, the quantum efficiency for a single ac- tive region is generally very low and, in the quantum cascade devices, is magnified by growing a ...
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Investigation and Application of Microscale Semiconductor Lasers and Cavities
... material we developed the PC lithography including beam writing and etching. The brunt of the collaboration moved from Harvard to the group of Professor R. Colombelli at the Universite de Paris-Sud 11 (Orsay, France). ...
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High Efficiency, Low Power Consumption DFB Quantum Cascade Lasers Without Lateral Regrowth
... years, quantum cascade lasers (QCLs) have proven to be very efficient coherent light sources in the mid-infrared region with a wide variety of applications, such as trace gas sensing, high-resolution ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... semiconductor quantum well (QW) structures due to the virtue of their novel electronic optical ...in quantum well and partly because of greater population inversion at a given carrier density ...
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Investigation of thermal effects in quantum-cascade lasers
... the buried heterostructure, heat diffusion can take place in both the vertical and lateral di- rections and in combination with the epilayer down mounting causes the buried heterostructure to ...
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Dilute magnetic semiconductor quantum-well structures for magnetic field tunable far-infrared/terahertz absorption
... ZnCdSe–ZnMnSe-based quantum wells is considered, in order to obtain a large shift of the peak absorption wavelength in the far infrared range, due to a giant Zeeman splitting with magnetic field, while maintaining ...
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Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.
... Molecular beam epitaxy (MBE) is a term used to denote the epitaxial growth of compound semiconductor films by a process involving the reaction of one or more thermal molecular beams with a crystalline surface under ...
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Including Arbitrary Geometric Correlations into One-Dimensional Time-Dependent Schrödinger Equations
... describe quantum electron transport in open systems that is valid both for Markovian or non-Markovian regimes and that guarantees a dynamical map that preserves complete positivity has been recently proposed ...
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Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition
... GaAs/AlAs multiple QWs have been studied, 23 the effect of quantum well confinement on acceptor state lifetime has been investi- gated, 24 and the dynamics of intra-acceptor level scattering ...
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Consequence of Quantum Confinement of Electrons in Carbon Nano Tubes
... the quantum state depends on the the temperature in CNTs and varies almost linearly in case of ideal one dimensional CNTs, hence it is reasonable to argue that ...using quantum relation ...
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Consequence of Quantum Confinement of Electrons in Carbon Nano Tubes
... the quantum state rises and hence the mean free path ...of quantum motion of electrons , we find that de-Broglie wave length of the electron varies linearly with the area of the cross section of the tube ...
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Signature of chaos in the semi quantum behavior of a classically regular triple well heterostructure
... triple well model from classical to ...and multiple quantum tun- neling depending on the energy of the system as the Planck’s constant varies from 0 to ...semi quantum chaos monitored by ...
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To Control the Propagation Characteristic of One-Dimensional Plasma Photonic Crystal Using Exponentially Graded Dielectric Material
... exponential graded materials and found two omni-directional reflection (ODR) bands in this structure; one in the visible and other in the infrared ...the graded material may also give additional degree of ...
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Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode
... illustrated in Fig.2, the semi.Ec, semi.Ev, semi.Efn, semi.Efp are the designation for conduction band, valence band, quasi-Fermi level in region n and p respectively. It shows that the potential barrier is formed ...
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