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control voltage leakage current

Design of Low Power Full Adder Using ONOFIC Approach

Design of Low Power Full Adder Using ONOFIC Approach

... two leakage control transistors (LCT) which are inserted between PUN (Pull Up Network) and PDN (Pull Down Network) circuit within the logic gate for which the gate terminal of each leakage ...

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Embedded System based Multi Source Leakage Current Protection for Low and Medium Voltage Applications

Embedded System based Multi Source Leakage Current Protection for Low and Medium Voltage Applications

... digital control techniques for controlling and monitoring ...output voltage is proposed in ...of control functions in a single chip, it is not adequate for protection of the inverter from many kinds ...

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Complementary Pass Transistor Control Unit Design for Subthreshold Current Management in Digital Portable Systems

Complementary Pass Transistor Control Unit Design for Subthreshold Current Management in Digital Portable Systems

... increased leakage current additional circuit of level converter is required, but it introduced area, and energy ...clustered voltage scaling (CVS), in such techniques no low voltage gate will ...

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Single-Carrier Modulation for 9-Level Neutral Point Clamped Inverters in Three Phase Transformerless Photovoltaic Systems

Single-Carrier Modulation for 9-Level Neutral Point Clamped Inverters in Three Phase Transformerless Photovoltaic Systems

... dangerous leakage currents (common-mode currents) can appear through the stray capacitance between the PV array and the ...these leakage currents, different inverter topologies that generate no varying ...

7

Minimisation of Leakage Current in Voltage Controlled Grid Connected Inverter

Minimisation of Leakage Current in Voltage Controlled Grid Connected Inverter

... saturation voltage (which will be given to the gate of MOSFET as pulses) will be ...sinusoidal voltage greater than triangular ...sinusoidal voltage. If the TURN OFF period is large then output ...

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Galeorstack  A Novel Leakage Reduction Technique for Low Power VLSI Design

Galeorstack A Novel Leakage Reduction Technique for Low Power VLSI Design

... Drain Leakage (I 5 ) Gate Induced Drain Leakage(GIDL) is due to high field effect in the drain junction of MOS transistor ...to control punch- through and drain induced barrier lowering with minimal ...

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Design and Implementation of Standby Leakage Power Reduction Technique for Nano scale CMOS VLSI Systems

Design and Implementation of Standby Leakage Power Reduction Technique for Nano scale CMOS VLSI Systems

... standby leakage power dissipation has become a critical ...the leakage power must be developed along with the device ...standby leakage power, this paper has presented a novel design technique that ...

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Design And Analysis Of Clocked Subsystem Elements Using Leakage Reduction Technique

Design And Analysis Of Clocked Subsystem Elements Using Leakage Reduction Technique

... 2.1 Leakage current control using transistor stack The leakage current flowing through a stack of series connected transistors reduces when more than one transistor of the stack is ...

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Design And Characterization Of 20NM SOI MOSFET Doping Abruptness Dependent

Design And Characterization Of 20NM SOI MOSFET Doping Abruptness Dependent

... gate control of the channel potential will ...threshold voltage, drain current, leakage current and sub-threshold slope of the SOI MOSFET due to the variation of doping abruptness of ...

24

SRAM Cell Leakage Control Techniques for Ultra Low Power Application: A Survey

SRAM Cell Leakage Control Techniques for Ultra Low Power Application: A Survey

... Sub-threshold leakage rises by ten times for every ...shold voltage [5] [6] ...down, leakage current in a sub-micron region becomes more significant and is comparable with the dynamic power ...

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LEAKAGE POWER REDUCTION TECHNIQUES FOR LOW POWER VLSI DESIGN: A REVIEW PAPER

LEAKAGE POWER REDUCTION TECHNIQUES FOR LOW POWER VLSI DESIGN: A REVIEW PAPER

... drain leakage is caused by high field effect in the drain junction of MOS ...to control punch-through and drain-induced barrier lowering while having a low impact on the carrier mobility in the ...supply ...

8

Standby And Active Leakage Current Control And Insertion Power Network Synthesis

Standby And Active Leakage Current Control And Insertion Power Network Synthesis

... on leakage power reduction through automatic insertion of sleep transistors for ...the leakage savings we can achieve are, by far, superior to those obtained using existing power-gating solutions and with ...

10

Design of Level Shifter with Wide Input Voltage Range

Design of Level Shifter with Wide Input Voltage Range

... The design concern on maximizing the performance while minimizing the power consumption has become more and more critical not only in the mobile consumer electronics but also in the wired embedded systems and high- end ...

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Ballistic (n,0) Carbon Nanotube Field Effect Transistors\' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2

Ballistic (n,0) Carbon Nanotube Field Effect Transistors\' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2

... First demonstration of the CNTFET was in 1998 [9, 10] and up to now extensive improvements have occurred in their structures and performances. These devices, generally, are divided into two types. First fabricated ...

7

Frequency Analysis Technique For Determination Of High Voltage Insulation Material Surface Condition

Frequency Analysis Technique For Determination Of High Voltage Insulation Material Surface Condition

... An insulator very important when it involve in using current and voltage. It is also used to protect cable or wire or anything that need insulator from the current flowing outside the cable. Without ...

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The Analysis of Leakage Current on a 20-kV Silicone Rubber Post-Insulator under Dry and Wet Conditions

The Analysis of Leakage Current on a 20-kV Silicone Rubber Post-Insulator under Dry and Wet Conditions

... working voltage will increase the power losses on the silicone-rubber post-insulator both under dry and wet ...applied voltage V across the electrodes (between the anode and the cathode) will create an ...

7

A Comprehensive Study on Power Reduction Techniques in Deep Submicron Technologies

A Comprehensive Study on Power Reduction Techniques in Deep Submicron Technologies

... threshold voltage is also scaled down for the ...threshold voltage has resulted in exponential increase of subthreshold leakage current causingleakage (static) power ...of leakage ...

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Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V

Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V

... 2 GaN-based heterostructure field effect transistors (HFETs), particularly AlGaN/GaN, have attracted much attention due to their potential to replace 600 to 1200V silicon-based power switching devices. Indeed, high-power ...

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ANN Based Improved Regenerative Braking System on PV/Battery Powered Electric Vehicles with Single Stage Interaction Converter

ANN Based Improved Regenerative Braking System on PV/Battery Powered Electric Vehicles with Single Stage Interaction Converter

... link voltage varies accordingto the motor speed during EV acceleration and reduced to minimum during breaking whichachieve regenerative braking at low EV speed show in Figure 15 ...low voltage generated by ...

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PV based High Step-up Input-Parallel Output-Series DC/DC Converter with Dual Coupled Inductors

PV based High Step-up Input-Parallel Output-Series DC/DC Converter with Dual Coupled Inductors

... the voltage-lift technique, showing the advantage that thevoltage stress across the switch is ...high current for high powerapplications, which risks reducing its ...a leakage inductor is recycled ...

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