field effect type transistors
Ambipolar Organic Field Effect Transistors Based on Indigo Derivatives
... [14] (a) J. D. Yuen and F. Wudl, “Strong acceptors in donor–acceptor polymers for high performance thin film transistors,” Energy Environ. Sci., vol. 6, pp. 392-406, 2013; (b) Y. Zhao, Y. Guo, and Y. Liu, “Recent ...
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An Approach to Decrease Dimensions of Field Effect Transistors
... a field-effect transistor gives us possibility to decrease dimensions of this type of transistors in comparison with approach considered in [16] and all the more with approach considered in ...
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Tunnel Field Effect Transistors for Ultra Low Power Applications
... ABSTRACT: In this Work, the analog performance is analyzed for a double-gate n-type tunnel field-effect transistor (DG n-TFET) with a relatively small body thickness (10 nm), which shows good drain ...
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Design sram using finfet
... A multigate device refers to a MOSFET which incorporates more than one gate into a single device. Fin-type field-effect transistors (FinFETs) are more better substitutes for bulk CMOS at the ...
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Hysteresis modeling in ballistic carbon nanotube field-effect transistors
... Silicon wafers (p-type, orientation ,100., 500–550 µ m thickness, 0.001–0.005 Ω ·cm resistivity) produced by NOVA Electronic Materials Ltd (Flower Mound, TX, USA) were used in this work. Thin silicon dioxide (SiO ...
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Schottky Field Effect Transistors and Schottky CMOS Circuitry
... Reverting back to the device architecture used in this study, for both the SOI and POI substrates, the body doping for both the NFETs and PFETs were kept as low as possible. This was simple for the POI substrates, ...
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Development of a deep submicron fabrication process for tunneling field effect transistors
... Two components of the TFET are in need of further study. The first is structure of the device. To the knowledge of the author no study has yet shown an approach where the doping, layer structure and i–region thickness of ...
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I-V characteristics model for Carbon Nanotube Field Effect Transistors
... The CNTFETs are modeled as Schottky barriers transistors (Fig 3). Those SB appear at the interfaces between the semiconducting nanotubes and the metallic leads (i.e., electrodes) when (i) the work function of the ...
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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
... Note that both output and transfer characteristics indi- cate our FeFETs have a typical n-channel depletion mode (NNN), though the device is based on p-doped sil- icon without special source and drain doping. Here, the ...
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Naphthalocyanine thin films and field effect transistors
... In this paper we investigate the growth of Nc thin films by sublimation and show that the resulting organic layers can be used to form p-type field effect transistors which can be operated ...
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Review on Tunnel Field Effect Transistors (TFET)
... opposite type and the most distinguish characteristics of TFET is the doping used for drain and ...n- type) junction, in which the electrostatic potential of the intrinsic region is controlled by a gate ...
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High Temperature Stable Operation of Nanoribbon Field Effect Transistors
... Abstract We experimentally demonstrated that nanorib- bon field-effect transistors can be used for stable high- temperature applications. The on-current level of the nanoribbon FETs decreases at ...
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All-GaN Integrated Cascode Heterojunction Field Effect Transistors
... Abstract — All-GaN integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine ...
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CONTROLLING MECHANISMS OF SPACE-CHARGE REGION IN COMPOUND FIELD-EFFECT TRANSISTORS
... Conventionally, field-effect transistors are operated in three classical ways of switching, ...a field transistor that could be operated as a photo-detector, temperature sensor, [1,2] pressure ...
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Uniformly Nanopatterned Graphene Field Effect Transistors with Enhanced Properties
... However, due to the semimetallic nature of graphene, it lacks a bandgap, which is necessary for technological applications such as FETs. Hence, this results in a very low on/off ratio in graphene ...
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Low noise narrow band amplification with field effect transistors
... The noise factor F is defined as the ratio of the total output noise power in the amplifier load to the noise power at the output due to the thermal noise of the source resistance... The[r] ...
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Nanoparticles of Cu2ZnSnS4 as performance enhancing additives for organic field-effect transistors
... organic field-effect transistors (OFETs), which utilise small molecules 1–3 or polymers 4–6 to achieve high charge carrier mobilities in excess of 40 cm 2 V 1 s 1 ...
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Influence of post annealing on the off current of MoS2 field effect transistors
... etc.), are widely used recently for fabricating next- generation nanoelectronics [1-10]. This is because of the high electron mobility of 2D materials, compared with the original bulk material. Typically, graphene shows ...
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All-polymer field-effect transistors using a brush gate dielectric
... Here we develop the theme and discuss the performance of devices made of a poly3-hexylthiophene P3HT active layer on PMMA brush layers for two different P3HT molecular masses... Materials[r] ...
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High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages
... reported that the contact resistance becomes increasingly important when the length of the channel is reduced and the transistor operates at low fields. The electric field has to exceed a critical value to obtain ...
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