GaAs-AlGaAs:He
Comparative Study of Heterostructure Barrier Diodes in the GaAs/AlGaAs System
... Abstract: A comparative study of the electron transport property and operation of the Potential Well Barrier (PWB) diode and Planar-doped Potential-well Barrier (PPB) diode has been carried out in this study. Both diodes ...
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Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier
... p-doped GaAs, the Fermi level lies in the light hole (LH)/heavy hole (HH) band, with the spin-orbit split-off (SO) band separated by ~ 340 meV from the LH/HH band near k = ...
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Constructing Empirical Likelihood Confidence Intervals for Medical Cost Data with Censored Observations
... The sketch of the relative orientation of the GaAs/AlGaAs heterostructure, the carbon resistor ABR and radiation field with rotatable polarization angle θ with respect to Hall bar axis..[r] ...
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Non-universality of scaling exponents in quantum Hall transitions
... Measurements of p at PPTs of InGaAs/InP heterostruc- tures using a current scaling technique through electron heat- ing [26] also found universal values. Though size-dependent measurements have been used to extract p in ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... like GaAs/AlGaAs, the generated radiation is intrinsically polar- ized perpendicularly to the well layer, hence propagating in this plane, but surface-normal emission is possible by using grating-type ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/ AlGaAs quantum cascade lasers is presented. The ...
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Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures
... perature, relative to the lattice temperature, will start to open this channel of heat dissipation into the lattice—but this need not be excessive, because the electrical power input is still small. At larger biases, ...
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Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications
... I am extremely thankful to Michael, who has helped me greatly with both my ex- periments and life. He is our local expert on nanowire growth and offered me the most excellent support in those first few months of ...
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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... (110)-grown GaAs/AlGaAs QW, the DP spin relaxation mechanism is not efficient for electron spins parallel to the growth direction because the spin orientation of electrons is parallel to the direction of ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... barrier layer, an 8-nm-wide GaAs quantum well, the other sloping barrier grown with content of Al changing from 4.28% to 28% on the length of approximately 9 nm, and the barrier layer of a width 50 nm. The upper ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... two GaAs/AlGaAs QWs with different structural ...designed GaAs/AlGaAs QW comparing with the symmetrical one, indicating the strong effect of Rashba SO coupling on spin ...in ...
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Calculation of Characteristics of the Single Electron Transistor
... on GaAs/AlGaAs double barriers under bias voltage [10] with different model has obtained a similar transmission coefficient as function of incident ...
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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
... In addition, it should be noted that the efficiency for a GaAs/AlGaAs QD is much lower than the ideal IBSC efficiency of 47% under 1 sun and 63% under full sun. This is due to the fact that the location of ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... in GaAs/AlGaAs quantum dots with high accu- racy using a new approach enabled by manipula- tion of the nuclear spin states with radiofrequency ...Moreover, GaAs hyperfine material con- stants are ...
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Micro photoluminescence of GaAs/AlGaAs triple concentric quantum rings
... supplied for 20 seconds for the partial crystallization of the original droplets into GaAs. Finally the substrate temperature was increased to 300°C and the sample sur- face was irradiated by the same As BEP (8 × ...
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Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires
... direction. GaAs core nanowires emerged from the Si surface and subsequently, the nanowire growth front advanced by a continuous sequence of (111) rotational twins, while the AlGaAs shell lattice was ...
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Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates
... shallow devices because the contacts are in close proxim- ity to the in situ top-gate, due to a thinner insulating Al- GaAs region. Circumventing the top-gate leakage prob- lem can be done with an alternative ...
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2D Photonic crystal thermo optic switch based on AlGaAs/GaAs epitaxial structure
... The realisation of what we believe to be first thermo-optic Mach-Zehnder interferometer switch based on a waveguide photonic crystal structure using an AlGaAs/GaAs epitaxial structure has been described. A ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... Several individual QDs have been examined in both In- GaAs (dots are labeled A1, A2, A3, etc. throughout the text) and GaAs (dots are labeled B1, B2, etc.) samples to verify the systematic nature of DNP at ...
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Design of RS and D Flip Flop using AlGaAs/GaAs MODFET Technology
... This paper enumerates high speed design of RS & D- flip-flop using AlGaAs/GaAs MODFET. The proposed Flip Flop is having less number of transistors than existing designs. Simulation results show lowest ...
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