GaN/AlGaN quantum well
Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths
... strain-balanced GaN/AlGaN quantum well structures are considered with regard to their potential application in optoelectronic devices working at communication ...
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High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum well electron blocking layers
... in GaN-based HEMTs will inevitably induce the spillover of transport electrons at high-drain- voltage conditions, and that becomes a growing ...tional AlGaN/GaN HEMT, due mainly to the insufficient ...
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A scattering rate approach to the understanding of absorption line broadening in near-infrared AlGaN/GaN quantum wells
... The charge density for the edge doped device is approximately 3.5x10 19 cm -3 . Thomas-Fermi screening included in the impurity scattering calculation results in a contribution of 67.329 meV to lifetime broadening ...
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Cubic GaN/AlGaN based quantum wells optimized for applications to tunable mid-infrared photodetectors
... of GaN and related materials make them particularly suitable for intersubband (ISB) based ...femtoseconds, GaN/Al(Ga)N planar nanostructures are becoming the foremost system for ISB devices operating at ...
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Investigation of quadratic electro optic effects and electro absorption process in GaN/AlGaN spherical quantum dot
... of GaN/AlGaN spherical quantum dot parameters, different behaviors are ...of well width, third-order susceptibility ...proposed GaN/ AlGaN quantum dot nanostructure from ...
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Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities
... between GaN and commonly used substrates, such as sapphire, results in a high defect density that hinders the vertical transport required for complex optoelectronic ...the well and barrier ...utilize ...
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Frequency up conversion in nonpolar a plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells
... nonpolar-nitride quantum wells in search of the best step QW profile, offering highest value of the relevant nonlinear ...multi quantum well up-converter structure which comprises a sequence of about ...
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Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
... QWs, well width fluctuations of the dimensions observed in InGaN/GaN QWs are absent, as discussed ...c-plane GaN/AlGaN QW systems, at least not for the Al contents studied ...
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Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well
... in GaN/AlGaN heterostructures started to attract the attention of researchers due to the prospect of their applica- tions in optoelectronic ...terahertz GaN/AlGaN QCL emitting in GaAs ...
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Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
... triangular quantum well at the junction. Such system behaves as quantum-two dimension (Q2D) system because the carriers are free to move on a plane, perpendicular to the ...mechanisms. GaN is ...
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Impact of Buffer Mole Fraction on Algan/ Gan HEMT with Different Gate Voltage
... the AlGaN cap layer, t2 is the thickness of the AlGaN layer, t3 is the thickness of the AlN layer, d0 is the distance between the centroid of the 2DEG and the top UID-AlGaN/AlGaN interface, ...
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Impact of Buffer Mole Fraction on Algan/ Gan HEMT with Different Gate Voltage
... the AlGaN cap layer, t2 is the thickness of the AlGaN layer, t3 is the thickness of the AlN layer, d0 is the distance between the centroid of the 2DEG and the top UID-AlGaN/AlGaN interface, ...
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Design, fabrication and characterization of gallium nitridebased circular schottky diode for hydrogen sensing
... (AlGaN/GaN) high-electron-mobility-transistor (HEMT) structure is chosen as the base material. The sheet concentration and mobility of epitaxial layers determined by Hall measurement were 6.61×10 12 cm -2 ...
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Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode
... illustrated in Fig.2, the semi.Ec, semi.Ev, semi.Efn, semi.Efp are the designation for conduction band, valence band, quasi-Fermi level in region n and p respectively. It shows that the potential barrier is formed ...
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A Physics-Based AlGaN/GaN HFET Compact Model for Implementation in Circuit Simulators.
... AlGaN/GaN heterojunction field-effect transistors (HFETs) are promising RF tran- sistors for use in high-power and high-frequency circuit applications. These HFETs possess a combination of high current ...
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Performance Analysis of doped and undoped AlGaN/GaN HEMTs
... [9] M. Hatano et al. “Comparative high-temperature DC characterization of HEMTs with GaN and AlGaN channel layers”, CS MANTECH conference, May 2010. [10] Trew R. J et al. “Nonlinear source resistance in ...
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A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides.
... Fermi level pinning and the measured barrier heights were close to the CNL. Titanium and zirconium provided the lowest barriers and gold provided the highest among the metals analyzed. It was consistently found that ...
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Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
... and a 200 nm thick n-doped GaN layer, a five- or ten-period InGaN/GaN structure was deposited with nominally 2.5 nm thick wells and 7.5 nm thick barriers. The peak emission from the MQW structure is around ...
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DESIGN, TECHNOLOGY AND CHARACTERIZATION OF GALLIUM NITRIDE BASED HIGH POWER HETEROSTRUCTURE FET FOR MICROWAVES
... By systematically changing the metal composition of the metallization scheme the effect on contact resistance was seen. First the optimal Al/Ti thickness ratio was required to find out. In [1, 2] it was revealed that an ...
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Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.
... Contact potentials for the source, drain and gate are defined as 0 Volts in the Electrode section of the Sentaurus Device. ’Hydro(eTemp)’ is used in the Physics section, because hot electrons play an important role in ...
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