Ge(Si)/Si quantum dots
Superconductivity in Ge/Si core shell nanowire quantum dots
... In this research project we will combine semiconductors, superconductors and quantum dots in order to try to create a new type of hybrid device that gives control over single holes as well as Cooper pairs. ...
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Polarized Raman Spectroscopy of Multilayer Ge/Si(001) Quantum Dot Heterostructures
... the Ge-Ge peak in Ge quantum dots from the bulk value is mainly due to the three reasons: ( i ) a confinement effect, ( ii ) an intermixing effect, and ( iii ) stress within the ...the ...
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The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation
... CTEM, scanning transmission electron microscopy (STEM), and EDX were conducted using a JEOL JEM- 2100 LaB6 transmission electron microscope (JEOL, Akishima-shi, Japan) and a FEI Tecnai Osiris transmis- sion electron ...
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Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo emf spectra and terahertz conductivity
... in quantum dot arrays that are caused by the transitions between quantized energy levels, as well as between the split levels and the continuum of the valence or conduction band ...within quantum ...
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The development of BEEM modeling for the characterization of Si/Ge self-assembled quantum dot heterostructures
... the Si/Ge quantum dots ...of quantum dots as the charge transport on individual dot can be characterized compared to the multitude of dots necessitated in other ...silicon ...
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RETRACTED ARTICLE: Enhanced Emission of Quantum System in Si Ge Nanolayer Structure
... the quantum dots (QDs) and the super-lattice structures are built as shown in the right ...the Si-Ge nanolayers and the super-lattice structure in PLD process in an environment of oxygen, ...
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Influence of delta doping on the hole capture probability in Ge/Si quantum dot mid infrared photodetectors
... exhibit quantum confinement in three dimensions, known as quantum dots ...the quantum dot infrared (IR) photodetectors (QDIPs) as compared with two- dimensional systems are as follows [1,2]: ...
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Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet etched pits
... among quantum dots or be useful for quantum cellular automata applications ...[8,9]. Quantum dots grown on planar substrates have the dis- advantage of island-island repulsion due to ...
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Composition and strain in thin Si1 xGex virtual substrates measured by micro Raman spectroscopy and X ray diffraction
... in Si/Ge structures such as SiGe epitaxial layers, 8–14 Si/Ge superlattices, 15–18 and Ge/Si quantum wells and quantum ...the Ge content, x and strain, 共or ...
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A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low Energy Irradiation
... of Si/Ge SL containing mono- layer of pure Ge, and enhanced radiation resistance of the SL structure was found as compared with bulk silicon ...the Si/Ge SL with embedded Ge ...
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Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
... thick Si buffer layer was deposited at 650°C with a growth rate of ...of Ge with a total thickness of ...grow Si cap- ping layers at a growth rate of ...
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Highly tunable hole quantum dots in Si Ge shell core nanowires
... the Si shell and Ge core, which causes the Fermi level to be pinned below the valence band energy of ...the Si shell, forming a (quasi) 1D ...a quantum dot system and the control of its ...
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Temperature spectra of conductance of Ge/Si p i n structures with Ge quantum dots
... of Ge/Si heterostructures (pri- marily designed for the spectral range of ...to Ge/Si structures is caused due to the possibility of their use in solar ...energy. Ge/Si ...
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Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
... All Si spacers were grown below 600 °C to prevent the Si-Ge interdif- fusion ...of Ge QDs and Si ...the Ge QDs growth behavior in the multilayer ...
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Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
... Quantum dots (QDs) populated by electrons or holes are considered to be promising platforms for the physical re- alization of qubits for quantum computation ...recently Si- or Ge- based ...
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Computer Simulation of Precipitation Process in Si/Ge Amorphous Multi Layer Films: Effects of Cu Addition
... of Si/(Ge + Cu) and Si/Ge, in which when the Cu dopants are present only in the Ge layer, the precipitation of nano-clusters decreases only in the Ge ...stabilizing Si and ...
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Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals
... both quantum dot size and interparticle distance are precisely ...to quantum effect at room temperature and large interaction between ...of quantum dot size, barrier layer and dot ...as ...
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Strain relaxation study of Si1 xGex & Ge buffer layers on Si(001) and InSb on Ge/Si(001) virtual substrates
... I would also like to thank Dr John Halpin for teaching me TEM sample preparation, Dr Vishal Shah for his advice and counsel on SiGe virtual substrates and Dr Stephen Rhead on teaching me about HR-XRD. I’d also like to ...
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Growth of GeSi nanoislands on nanotip patterned Si (100) substrates with a stress induced self limiting interdiffusion
... (100) Si wafers with ...the Si-based nanotips on Si substrates were the same as those detailed in our previous publication ...on Si sub- strates, the samples were treated with a standard Radio ...
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Electrostatically defined quantum dots in a two dimensional electron/hole gas at the Si and SiO2 interface
... a quantum dot the energy spectrum has to be confined in all three directions leading to quantum effects that strongly influence the electronic transport at low ...a quantum dot can be probed by ...
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