InAs-GaAs quantum dot
Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations
... of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... structures. Quantum dots show promise for use in diode lasers, amplifiers, and biological ...solid-state quantum computing. Indium arsenide quantum dots are currently studied for their use in the ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... In conclusion, we presented a detailed study of the IR photoconductivity in self-assembled InAs/GaAs quantum dots. A compact semiconductor QD laser was used as a narrowband coherent pump source. We ...
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Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
... of InAs/GaAs quantum dot (QD) systems with Sb spray prior to the capping of a GaAs layer was determined by a Raman scattering ...the InAs/GaAs system show two phonon ...
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Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing
... We investigated the ground-state (GS) modulation characteristics of 1.3 μm InAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. The choice of annealing conditions ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... assembled InAs/GaAs quantum dot (QD) structures due to their unique properties as well as their great potential for various optoelectronic devices [1 – ...the quantum coupled ...
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Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots
... The optical properties of large InAs/GaAs quantum dots were investigated by low-temperature photoluminescence as a function of the excitation-power density. The presence of excited states was clearly ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... 1.3-μm quantum dot (QD) laser was de- veloped; however, there has been no distinct development or progress on quantum dot growth since then up till ...1.3-μm quantum dot laser ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were ...the GaAs substrate ...layers, GaAs or InGaAs buffers, and ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... 1. Kovsh AR, Ledentsov NN, Mikhrin SS, Zhukov AE, Lishits DA, Maleev NA, Maximov MV, Ustinov VM, Gubenko AE, Gadjiev IM, Portnoi EL, Wang JS, Chi J, Ouyang D, Bimberg D, Lott JA: Long-wavelength (1.3 -1.5 micron) ...
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Optical characterization of In flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm
... In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam ...self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μ m regime, which ...
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Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... The active PC material has been the most heavily researched aspect of CW THz optoelectronics, since the semi- nal work into ultrafast semiconductors such as radiation- damaged silicon-on-sapphire 6 and ...
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Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells
... the quantum engineered QD-IBSC of 35 ...the quantum dot ...the quantum dots significantly affects the macroscopic performance of a QD-IBSC and in distinct contrast to other work, no strain ...
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Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells
... the quantum dots are extracted from the local mean intensity maps which are bounded by a truncated pyramid shape with quantum dot base length b, length at the site of truncation a, and height ...and ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... of quantum confined material within a solar ...band. Quantum well structures would otherwise be useful for this concept except that the isolation requirement of the intermediate band can only be ideally ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... of InAs, indium segregation leads to InAs agglomerations that cause three-dimensional shape transforma- tion or compositional ...localised InAs rich regions ...of InAs agglomerations will ...
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InGaAs Quantum Well Grown on High Index Surfaces for Superluminescent Diode Applications
... Illustrated in Fig. 1 are the AFM images of the as-grown samples on different oriented GaAs surfaces. It is clear that the surface morphology is strongly dependent on the sub- strate orientation; the surfaces of ...
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Bright Single Photon Source at 1 3 μm Based on InAs Bilayer Quantum Dot in Micropillar
... The excitation power-dependent μPL spectra of InAs/ GaAs BQDs in a micropillar was studied by using a continuous wave (cw) He-Ne laser for above-band exci- tation, as Fig. 3a shows. They show the exciton ...
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