InAs/GaAs Quantum Dot Laser
Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations
... The quantum dots (QDs), such as InAs/GaAs QDs, are valuable type of semiconductor nanostructures in which carriers’ movement are limited in all the three dimen- ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... 1.3-μm quantum dot (QD) laser was de- veloped; however, there has been no distinct development or progress on quantum dot growth since then up till ...1.3-μm quantum dot ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...the quantum well, the superior attributes of the quantum dot has encouraged ...
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Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... Ti:Sapphire laser operating at 780 nm wavelength, with pulses of 150 fs duration at a repetition rate of 96 ...high-temperature-grown GaAs between the ...
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Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p i n Laser Heterostructures
... semiconductor laser struc- tures, containing quantum dot layers (QDs), were investigated by means of tem- perature dependent current-voltage and electroluminescence measurements over InAs/InP, ...
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... the laser was operated epitaxial side up, (ii) the laser was not hard soldered to a high thermal conductivity heat-sink, and (iii) no facet coatings were ...p-doped InAs/GaAs QD laser ...
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InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application
... whole laser structure leading to many complex and uncertain factors ...(LC-DFB) laser structure which was realized by deeply etching the grat- ing vertically into the ridge waveguide, but low slope ef- ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... T HE generation of broadband terahertz (THz) radiation, which is strongly desired for spectroscopic, imaging and security applications, particularly in a form of compact and easily transportable devices, is a major task ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... nm) were deposited on the backside of the substrate fol- lowing lapping down to ~100 μm. Finally, the wafer was cleaved into laser bars and the cleaved facets were left uncoated. The devices were mounted p-side ...
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Bright Single Photon Source at 1 3 μm Based on InAs Bilayer Quantum Dot in Micropillar
... on GaAs substrate is effective to achieve emis- sion above ...in laser diodes at ...Low-density InAs/GaAs BQDs emitting at ...single InAs/GaAs BQDs emitting at ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... ferent laser wavelengths but the same intensity (100 mW/cm 2 ) to excite carriers at different layers inside the ...the GaAs matrix or in the wetting layers, and even if the photon-generated carriers are ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... High-growth-temperature GaAs spacer layers were used to sup- press the formation of threading dislocations ...external quantum ef fi ciency (EQE) was measured at room temperature and zero ...of ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... In this communication, we report on a room- temperature study a ten-layer system of tunnel-coupled In(Ga)As/GaAs QD. As shown in [7,8], the structure with ten tunnel-coupled layers of In(Ga)As/GaAs QDs ...
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Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
... of GaAs, QDs for quantum neural networks were first proposed by ...of quantum dot molecules interacting with each other only by means of their shared phonon ...achievable quantum ...
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Chirped InGaAs quantum dot molecules for broadband applications
... InGaAs quantum dot molecules (QDMs) formed by partial-cap and regrowth technique exhibit two ground- state (GS) peaks controllable via the thicknesses of InAs seed quantum dots (x), ...
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Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... The possibility of creating population inversion in QDs through phonon coupling was first investigated for microwave-driven electrostatic quantum dots[4]. Re- cently, it has been demonstrated that the conditions ...
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Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots
... on quantum dots ...of quantum dots in high-performance photodetectors or DNA nanosensors for medical diagnosis and bio- molecular investigations [5,6], as well as, in the field of quantum ...
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Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell
... The optical generation profiles of the considered struc- tures are shown in Fig. 4. NWs with lengths of 500 and 3000 nm are considered in this part (hereafter referred to as the short NW and the long NW, respectively). ...
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Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... The blue line in Fig. 4(a) shows the theoretical values of the exciton population generated by the pump pulse, which excellently replicates the broadband feature ob- served at positive detuning. The lineshape of this ...
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Effects of annealing on performances of 1 3 μm InAs InGaAs GaAs quantum dot electroabsorption modulators
... of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C- annealed) on the preliminary performances of ...m InAs-InGaAs-GaAs quantum dot electroabsorption modulators ...
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