InAs quantum dot laser
Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... In conclusion, we presented a detailed study of the IR photoconductivity in self-assembled InAs/GaAs quantum dots. A compact semiconductor QD laser was used as a narrowband coherent pump source. We ...
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Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures
... novel quantum confined material systems (quantum wells and more recently quantum dots) for device ap- ...the laser in order to modulate the cavity loss through absorption saturation enabling ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... This laser design is in fact standard and is described in various publica- tions [2,8-10] but differs from them in that the active layer is SLQD, formed by ten QD layers and thin barrier layers between ...
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Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations
... photon densities, laser’s response to various step current injections, and P-I characteristic curve for the three en- ergy levels ES2, ES1 and GS, were investigated. The results have shown that by increasing the ...
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InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application
... 1.3-μm InAs/ GaAs QD LC-DFB laser fabricated by deep gratings vertically etched into the ridge waveguide structure, and a low slope efficiencies below ...the laser ridge waveguide. In addition, the ...
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... In this work, InAs/GaAs QD lasers were directly grown on silicon substrates using a solid- source molecular beam epitaxy (MBE) system. In order to realize high-quality IIIÐV lasers on silicon, it is necessary to ...
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Investigation of InAsSbP quantum dot mid-infrared sensors
... and InAs, InP and Sb (6N) were used as so- ...of quantum dots were studied using an atomic force microscope (AFM – Asylum Research MFP- ...an InAs substrate, unencapsulated InAsSbP QDs and contacts ...
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Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... For further clarification of the ultrafast behaviour of the structure, the antenna was driven using a mode-locked Ti:Sapphire laser operating at 780 nm wavelength, with pulses of 150 fs duration at a repetition ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... In(Ga)As quantum dots on silicon [7] and Ge [8] substrates, to realize lasing at a wavelength of 1300 nm ...[9]. Quantum dots are expected to offer several advantages over the current approach of bulk Ge on ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... To assess our diodes as photodiodes operating at 1300 nm wavelength we measured the responsivity of the device and room temperature photoluminescence (PL) spectra from as-grown material, as shown in figure 2. For the ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... 1.3-μm quantum dot (QD) laser was de- veloped; however, there has been no distinct development or progress on quantum dot growth since then up till ...1.3-μm quantum dot ...
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Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p i n Laser Heterostructures
... semiconductor laser struc- tures, containing quantum dot layers (QDs), were investigated by means of tem- perature dependent current-voltage and electroluminescence measurements over InAs/InP, ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...the quantum well, the superior attributes of the quantum dot has encouraged ...
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Efficient single photon source based on μ fibre coupled tunable microcavity
... tor devices to build a scalable quantum circuit. However, it is difficult to extract photons with a high efficiency, since the QD is embedded in a high-refractive-index semiconductor. Besides, the speed of the QD ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... usual quantum-well (QW) lasers, in many aspects including threshold current, thermal stability, modulation bandwidth, and spectral band-width, that is similar to an impulse function due to discrete mode density ...
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Design and Implementation of Quantum Dot Enhanced Next Generation Photovoltaic Devices
... As quantum wells, which saved considerable computation ...these quantum wells, resulting in a sub-bandgap collection efficiency near the GaAs bandedge which serves as a useful analogue of the true ...
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Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
... the InAs QDs that provides strain relief for the dot/cap- ping layer lattice ...the InAs TO phonon signal as the main peak, and the LO signal giving a high-energy-side ...the InAs QD phonon ...
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Picosecond control of quantum dot laser emission by coherent phonons
... (In,Ga)As quantum dots, is shifted into or out of resonance with the cavity mode, a large enhancement or suppression of the lasing emission can dynamically be ...
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Time-resolved spectra of a self-pulsing quantum dot laser
... the laser is not oscillating, upper part (a), and when the laser exhibits oscillations, lower one ...the laser is strongly multi-mode covering about ...
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Photon statistics excitation spectroscopy of a quantum dot micropillar laser
... We introduce photon-statistics excitation spectroscopy and exemplarily apply it to a quantum-dot micropillar laser. Both the intensity and the photon number statistics of the emission from the ...
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