InAs quantum dot layer
Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... as: dot size, density, material/s, multi-layer periodicity, and density-of- ...and InAs QD layers integrated into bulk GaAs can act analogously to mid-gap carrier trapping ...a layer period ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... two quantum efficiency pads, transmission line model (TLM) measurement pads A broadband/g-line ultraviolet light source was calibrated to 10 mW/cm 2 ...photoactive layer, and 1 minute for the development of ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... In figure 2, the main PL peak and a small responsivity peak (5 mA/W) at the wavelength of 1280 nm suggest that the ground state transition of the quantum dots occurs at 1280 nm. There is a secondary peak in the PL ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... In summary, vertical energy transfer for InAs/GaAs QD pair structures with and without an AlGaAs barrier was compared. Low-temperature PL measurements show that the QD peaks shift to the blue and the relative PL ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... using InAs quantum dots are ...absorption layer and Si multiplication layer. Using InAs quantum dots offers lower dark currents at unity gain (as observed in ...the ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... 1.5 μm, and a p + -doped contact GaAs layer. QD ensem- bles were grown ten times by InAs 2.3 monolayer depos- ition with GaAs barrier layers with a thickness of 6 nm between QD layers. Thus, layers of ...
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Investigation of InAsSbP quantum dot mid-infrared sensors
... and InAs, InP and Sb (6N) were used as so- ...wetting layer was chosen to provide the growth of InAsSbP nanostructures in S–K growth ...of quantum dots were studied using an atomic force microscope ...
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Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells
... window layer the devices were otherwise ...window layer we modeled the structures and their performance in the software SCAPS (seeFigure S7 − ...window layer), we matched the simulation output with ...
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Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells
... window layer the devices were otherwise ...window layer we modeled the structures and their performance in the software SCAPS (seeFigure S7 − ...window layer), we matched the simulation output with ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... The InAs QD are than grown and a small interrupt time is given after each growth of the ...of InAs QD which will improve dot density and helps in obtaining a more homogenous dot ...buffer ...
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Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers
... the dot density decreases with smaller dots disappearing while larger dots growing with annealing ...the dot size becomes larger than a critical value, dislocations are formed, which is not pre- ferred for ...
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... work, InAs/GaAs QD lasers were directly grown on silicon substrates using a solid- source molecular beam epitaxy (MBE) ...nucleation layer made of AlAs was deposited by migration enhanced epitaxy using ...
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Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
... of InAs/GaAs quantum dot (QD) systems with Sb spray prior to the capping of a GaAs layer was determined by a Raman scattering ...the InAs/GaAs system show two phonon signal bands ...
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Effects of annealing on performances of 1 3 μm InAs InGaAs GaAs quantum dot electroabsorption modulators
... Quantum dot (QD) lasers are now extensively investi- gated for applications in low-cost metropolitan access and local area ...to quantum dot elec- troabsorption modulators (QD-EAMs) ...active ...
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Bright Single Photon Source at 1 3 μm Based on InAs Bilayer Quantum Dot in Micropillar
... metamorphic layer and ultralow growth rate in the active layer, which might de- teriorate the crystal quality [2], the BQD structure is also desired to grow low-density QDs in telecom ...Low-density ...
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Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations
... In this paper, we have considered five energy levels which are belong to: the separate confinement heterostruc- tures (SCH), wetting layer (WL), second and first excited states (ES2) and (ES1), and the ground ...
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Chirped InGaAs quantum dot molecules for broadband applications
... QDM layer and 100-nm ...QDM layer and a final 100- nm ...QDM layer is formed via the partial-cap and regrowth technique [15] where x monolayers (MLs) of InAs seed QDs are grown at 500°C, then ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... semiconductor quantum dot lasers have been improved with progress in active layer ...formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... top layer of LT-GaAs. This layer is very thin (in comparison with the ∼ 1 ...this layer is to increase the dark resistance and allow for better contact with metallic PCA ...spacer layer of ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were ...buffer layer on the photovoltage and photoconductivity signal was ...
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