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poly-Si/sub 1-x/Ge/sub x/ gate

Si1 x Ge x /Si interface profiles measured to sub nanometer precision using uleSIMS energy sequencing

Si1 x Ge x /Si interface profiles measured to sub nanometer precision using uleSIMS energy sequencing

... With the advancement of growth technologies such as chemical vapour deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) etc., devices are now routinely composed of ...

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Surprising Differences in the Variability of Y Chromosomes in African and Cosmopolitan Populations of Drosophila melanogaster

Surprising Differences in the Variability of Y Chromosomes in African and Cosmopolitan Populations of Drosophila melanogaster

... 2. Selection against deleterious mutations could reduce levels of variation on the Y chromosome relative to the X chro- mosome, but rarely to the degree observed in African pop- ulations (Kaiser and Charlesworth ...

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Formation of Metal Silicide and Metal Germanosilicide Contacts to Si[subscript 1-x]subscript Ge[subscript x] Alloys

Formation of Metal Silicide and Metal Germanosilicide Contacts to Si[subscript 1-x]subscript Ge[subscript x] Alloys

... both Si and Si Ge 1x x has been extensively ...of x-ray photoelectron spectroscopy (XPS) to obtain detailed band structure information and to determine the Schottky ...

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Characterization of Quaternary Chalcogenide As-Ge-Te-Si Thin Films

Characterization of Quaternary Chalcogenide As-Ge-Te-Si Thin Films

... deposition process (at normal incidence), the substrates were suitably rotated to obtain films of uniform thickness. Film thickness was controlled in the range 100-200 nm using a quartz crystal (Edward FTM5) thickness ...

9

Study of Si1-xGex Junction Formation for SOI Based CMOS Technology

Study of Si1-xGex Junction Formation for SOI Based CMOS Technology

... on gate leakage and source drain subthreshold leakage ...the gate leakage more than 10 times. In the same transistor, polysilicon gate has been replaced by metal gate to achieve low threshold ...

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Growth and characterisation of terrace graded virtual substrates with Si[subscript 1 x]Ge[subscript x] 0 15 ≤ x ≤ 1

Growth and characterisation of terrace graded virtual substrates with Si[subscript 1 x]Ge[subscript x] 0 15 ≤ x ≤ 1

... The INFICON Sentinel III flux monitoring system (EIES) utilised on the V90S SS-MBE growth system monitors the requested flux rate from the electron beam evaporators, providing a signal that is used in a control loop to ...

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Down-top nanofabrication of binary (CdO)x (ZnO)1-x nanoparticles and their antibacterial activity

Down-top nanofabrication of binary (CdO)<sub>x</sub>&nbsp;<br />(ZnO)<sub>1-x</sub>&nbsp;nanoparticles and their antibacterial activity

... Figure 1 illustrates the behavior and mechanism of devel- opment of NPs during calcining. The primary purpose of PVP was to stabilize the complex metallic salts generated. Frequently, this was attained by side ...

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Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures

Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures

... terial having a larger dielectric constant. 1,2 This is necessary to improve reliability and reduce tunneling current for na- nometer device scaling. An obstacle in this effort is the for- mation of an interface between ...

6

Structural Properties of (SnO2)1-x(ZnO)xThin Films Deposited By Spray Pyrolysis Technique

Structural Properties of (SnO<sub>2</sub>)<sub>1-x</sub>(ZnO)<sub>x</sub>Thin Films Deposited By Spray Pyrolysis Technique

... The study of film surfaces is deposited important to recognize how the distribution and arrangement of atoms on surfaces, and get to know the differences or homogeneity properties or attributes relating to each atom ...

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Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

... Thin films of the end members and their alloys have been deposited using metal organic bubblers of triethyldialumi- num tri-sec-butoxide, 16 and tantalum pentaethoxide. These materials were deposited at a process chamber ...

5

Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3

Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3

... Laser light of various wavelengths incident on the p surface of the mesa generated photomultiplication characteristics corre- sponding to pure electron, mixed carrier, and, in some cases, pure hole injection, designated ...

7

Magnetotransport, structural and optical characterization of p type modulation doped heterostructures with high Ge content Si[subscript  1 x]Ge[subscript x] channel grown by SS MBE on Si[subscript  1 y]Ge[subscript y]/Si(001) virtual substrates

Magnetotransport, structural and optical characterization of p type modulation doped heterostructures with high Ge content Si[subscript 1 x]Ge[subscript x] channel grown by SS MBE on Si[subscript 1 y]Ge[subscript y]/Si(001) virtual substrates

... 6.2 Room temperatures magnetotransport properties of 2DHG formed in the Sit_xGex channel of p-type MOD Sh_xGex/Sh-yGey heterostructures: Maximum-entropy mobility spectrum analysis 6.2.1 [r] ...

208

On the sub supersolution method for p(x) Kirchhoff type equations

On the sub supersolution method for p(x) Kirchhoff type equations

... of sub-supersolution method for the problem ...of sub-supersolution, we shall establish also a generalization of Theorem ...write X = W  ,p(x) (). Definition . () We say that u ∈ X ...

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Sub-barrier fusion of Si+Si systems

Sub-barrier fusion of Si+Si systems

... electrical rigidity with respect to beam and beam-like par- ticles, using an electrostatic deflector. This experimental set-up is shown in Fig. 2, it allows fast and reliable mea- surements of relative and absolute cross ...

5

Ab Initio Study of Binary and Ternary Nb₃(X,Y) A15 Intermetallic Phases (X,Y = Al, Ge, Si, Sn)

Ab Initio Study of Binary and Ternary Nb₃(X,Y) A15 Intermetallic Phases (X,Y = Al, Ge, Si, Sn)

... and Pugh’s [44] index of ductility of shear modulus over bulk modulus ratio (G/B) and Poisson’s ratio (v) [45, 46]. The values of the aforementioned properties are listed in Table 3. According to [47], for metallic ...

27

On ζ*- generalized pre connectedness and ζ*- generalized pre compactness in Topological spaces

On ζ*- generalized pre connectedness and ζ*- generalized pre compactness in Topological spaces

... f: X Y is a contra  *-gpcontinuous function from  *-gp –connected space X on to a space ...in X with f -1 (A) f -1 (B) = f -1 (A B) = f -1 (Y)= X and f ...

5

Decreased bacteria activity on Si3N4 surfaces compared with PEEK or titanium

Decreased bacteria activity on Si<sub>3</sub>N<sub>4</sub> surfaces compared with PEEK or titanium

... S. aureus, E. coli, and Enterococcus were obtained from American Type Culture Collection (Manassas, VA) (strains 35984, 25668, 25923, 26, and 6569, respectively). The dry pellet was rehydrated in 6 mL of Luria broth (LB) ...

12

Extra Electron Diffraction Spots Caused by Fine Precipitates Formed at the Early Stage of Aging in Al Mg X (X=Si, Ge, Zn) Cu Alloys

Extra Electron Diffraction Spots Caused by Fine Precipitates Formed at the Early Stage of Aging in Al Mg X (X=Si, Ge, Zn) Cu Alloys

... for Cu-free alloys aged for the same amount of time were also obtained, as shown in Fig. 3(d)–3(f). Comparing Figs. 3(a)– 3(c) and Figs. 3(d)–3(f), extra diffracted spots marked by white arrows in the former set can be ...

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The Evidence of Invalidation of the BH model at the GC and the Existence of Magnetic Monopoles

The Evidence of Invalidation of the BH model at the GC and the Existence of Magnetic Monopoles

... to sub-mm wavelength band with power peaking around 10 12 Hz in the sub-mm band and the x-ray radiation near the GC are also essentially in agreement with the prediction of our model ( Peng and Chou ...

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Identification of capsazepine as a novel inhibitor of system xc&minus; and cancer-induced bone pain

Identification of capsazepine as a novel inhibitor of system x<sub>c</sub><sup>&minus;</sup> and cancer-induced bone pain

... The DPA analysis showed that both the doses of CPZ prevented the onset of pain-related behaviors as paw withdrawal thresh- olds did not significantly deviate from baseline measurements [r] ...

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