quantum wells (QWs)
Quantum Wells to Improve the Performance of III/V Multi-junction Solar Cells.
... the wells in [8, 9], was required to satisfy the strain-balance ...of quantum wells that can be ...external quantum efficiency peak values to less than ...the wells and barriers ...
170
Terahertz quantum Hall effect for spin split heavy hole gases in strained Ge quantum wells
... Ge quantum wells ( sGe- QWs) are attractive systems for spintronics due to their compatibility with CMOS technology and finite SO effects, driven by the Rashba SOI ...the quantum Hall effect ( QHE ) [ ...
10
Stark Effect in P-Type Delta-Doped Quantum Wells
... The purpose of this paper is to describe the QCSE in p-type Be δ-doped GaAs quantum wells (QWs). The calculations are conducted by using the empirical tight binding (TB) method. Similar TB calculations have ...
8
Room temperature efficient light detection by amorphous Ge quantum wells
... a-Ge quantum wells have been employed as proficient light sensitizer in a basic photodetector device, showing at room temperature an enhanced photocurrent, with an internal quantum efficiency as high ...
7
Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers
... Figure 1. A scheme of self-assembled silicon quantum wells (Si-QWs) obtained by varying the thickness of the oxide overlayer prepared on the Si (100) wafer. The white and black balls label the ...
18
Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
... up with an increased number of QWs. At low tempera- tures, three components of the peak, which were well- resolved in A-sample, can be traced. However, in the B- sample, the low-energy PL peak is dominated by its 0.85 eV ...
7
“Smart Design” of Quantum Wells and Double Quantum Wells Structures
... (quantum wells and superlattices) bas- ed on the combination of Inverse Scattering Problem Me- thod and the direct solution of the eigenvalue problem for the Schrödinger equation with reconstructed ...
9
Rashba spin splitting and terahertz quantum Hall effect for heavy holes in strained germanium quantum wells
... This thesis presents a thorough characterisation - by means of THz-TD magneto-spectroscopy (THz-TDMS) and polarisation resolved (PR)-THz-TDMS - of high mobility 2DHGs in 0.8% and 1.3% compressively strained germanium ...
153
Intersubband terahertz lasers using four-level asymmetric quantum wells
... We demonstrate the potential for laser operation at far-infrared wavelengths ~30–300 m m, 1–10 THz! by using intersubband emission in four-level GaAs/AlGaAs asymmetric ~stepped! quantum wells. Achieving ...
7
The Effect of Exchange-Correlation Holes on the Temperature Dependent Dynamic Dielectric Function of Single-Layer Quantum Wells and Coupled Nanolayers
... In this paper, for the first time we have studied theoretically the effect of exchange-correlation holes around electrons in GaAlAs/GaAs/GaAlAs nanostructure on the temperature- dependent dynamic dielectric function of ...
5
Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... 16. Lombez L, Lagarde D, Renucci P, Amand T, Marie X, Liu BL, Wang WX, Xue QK, Chen DM: Optical spin orientation in (110) GaAs quantum wells at room temperature. Phys Status Solidic 2007, 4:475, Ohno Y, ...
7
The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells
... The envelope function and effective mass approxima- tions have been employed extensively in the determination of electronic states in semiconductor heterostructures such as quantum wells and superlattices ...
9
Aperiodic Fibonacci Series Multiple Quantum Wells Lead to Topological Quantum Computation
... multiple quantum wells structures ...exotic quantum phases of matter that host quasiparticles with non-Abelian anyons partially due to the possibility of topological quantum computation ...
9
Spectroscopical analyis of strained silicon quantum wells
... Molecular Beam Epitaxy (MBE) was used in the growth of two distinct silicon quantum wells. Sample C2972 has an extremely thin (40nm) low temperature virtual substrate LTVS, as detailed in Fig 2, while the ...
8
Electronic properties of quantum wells for field effect transistor applications
... the quantum w ell, the electron screening remains relatively unaltered but the number of local scatterers is ...doped quantum wells when compared to bulk doped ...
199
Optimization of electron Raman scattering in double rectangular quantum wells
... Considering ERS of the ASDQW is strongly affected by the geometrical size and any changes in the structure leads to changes in the ERS and the fre- quency of the secondary radiation. Using the above optimization ...
8
Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field
... based quantum wells and self-assembled quantum wires is investigated theoretically and experimentally through the study of the exciton diamagnetic ...for quantum wires and quantum ...
9
Spin relaxation and carrier recombination in GaInNAs multiple quantum wells
... into quantum wells, quantum dots, and other heterostructures, due to their po- tential applications in ...i.e. quantum wells, and the principal effects of quantum confinement on ...
134
Well width dependence of the emission linewidth in ZnO/MgZnO quantum wells
... 2. Zhang BP, Binh NT, Wakatsuki K, Liu CY, Segawa Y, Usami N: Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect. Appl Phys Lett 2005, ...
5
The effects of linear and non-linear diffusion on exciton energies in quantum wells
... determine the linear diffusion coefficient D. Once D has been determined the relationship could then be utilized as a predictive tool, e.g., to determine the annealing time necessary to produce a given energy shift for a ...
6