Si-Si/sub 1-x/Ge/sub x/ structures
Si1 x Ge x /Si interface profiles measured to sub nanometer precision using uleSIMS energy sequencing
... With the advancement of growth technologies such as chemical vapour deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) etc., devices are now routinely composed of ...
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Ab Initio Study of Binary and Ternary Nb₃(X,Y) A15 Intermetallic Phases (X,Y = Al, Ge, Si, Sn)
... Niobium silicide based alloys have attracted much interest as the next generation ultra-high temperature alloys owing to their creep, high temperature strength and ambient temperature fracture toughness [3, 4]. Their ...
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Characterization of Quaternary Chalcogenide As-Ge-Te-Si Thin Films
... 30 Ge 10 Te 60-x Si x thin films before and after radiation of 1 and 15 mega ...of Si content before and after radiation of 1and 15 mega rad are shown in ...increasing Si ...
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Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3
... The MHDSM of Hayat et al. [24] was also used to predict the multiplication and excess noise characteristics of the type A and B Al Ga As–GaAs structures measured here using modeling parameters deduced from Groves ...
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Surface phonons of the Si(111):In (4 x 1) and (8 x 2) phases
... point 1 兲 , but the data show a strong relation between the LT and RT structures, in that all the 共4 ⫻ 1兲 lines appear in 共8 ⫻ 2兲 spectra, although blueshifted and more intense, as discussed ...
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Down-top nanofabrication of binary (CdO)<sub>x</sub> <br />(ZnO)<sub>1-x</sub> nanoparticles and their antibacterial activity
... (CdO) x (ZnO) 1–x NPs were successfully prepared through thermal treatment ...(CdO) x (ZnO) 1–x were produced and characterized by face-centered cubic and hexagonal ...
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Study of Si1-xGex Junction Formation for SOI Based CMOS Technology
... I am sincerely grateful to my advisor Dr. Veena Misra for her help and sup- port during my doctoral research work at NC State University. Dr. Misra provids insights into many aspects of my research on strain engineering. ...
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A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low Energy Irradiation
... of Si/Ge SL containing mono- layer of pure Ge, and enhanced radiation resistance of the SL structure was found as compared with bulk silicon ...the Si/Ge SL with embedded Ge ...
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Temperature spectra of conductance of Ge/Si p i n structures with Ge quantum dots
... semiconductor structures with new physical properties has been the primary goal of nanotechnology, which has the aim of expanding the limits of applicability of semiconductor ...of Ge/Si ...
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Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ
... This thesis employed the RBS analysis system at the department of Electronic Materials Engineering at the Australian National University. This system is also basically an ion accelerator, similar to the ion implanter ...
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Extra Electron Diffraction Spots Caused by Fine Precipitates Formed at the Early Stage of Aging in Al Mg X (X=Si, Ge, Zn) Cu Alloys
... ing AlMgZnCu, AlMgSiCu and AlMgGeCu alloys. In addi- tion, AlMgZn42 and AlMgZnCu42 alloys were prepared to compare the difference Zn-to-Mg ratios with AlMgZn and AlMgZnCu alloys. Titanium was included in the AlMgZn and ...
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Reflectance anisotropy spectroscopy of Si(111) (3 x 1)Li and Ag surfaces
... × 1)Ag and (3 × 1)Li systems have quite similar surface state electronic structures, there are differences in their sub- band-gap dielectric functions ...× 1)Ag ...× 1)Ag system ...
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A first principles study of sub-monolayer Ge on Si(001)
... × 1) reconstructed slab, we found that the total energy was converged to better than 1 meV for a vacuum layer of 5 ˚ A (compared to 8 ˚ ...than 1 meV per ...
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Formation of Metal Silicide and Metal Germanosilicide Contacts to Si[subscript 1-x]subscript Ge[subscript x] Alloys
... could be directly formed as the first silicide phase when the Ti diffusion barrier is employed, suggesting that somehow the presence of the diffusion barrier alone would allow the system to bypass the formation of the ...
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Growth and characterisation of terrace graded virtual substrates with Si[subscript 1 x]Ge[subscript x] 0 15 ≤ x ≤ 1
... The concept of terrace grading introduced by Capewell (2002) (Capewell et al. 2002) has been shown to offer clear improvements over more conventional stepped and linear graded structures. Capewell (2002) ...
233
CARRIER TRANSPORT MECHANISM OF CdSexS1-x/Si HETEROJUNCTION
... changes continuously with the composition (x) with in the energy range corresponding to the visible wavelengths [2]. CdSeS having specific physical properties such as direct band gap widths, high absorption ...
7
Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes
... different Si–O–Si bond angles, ␣ ⫽ 150°, the optimum bond angle from ...for Si and ...than 1 order of mag- nitude larger, and is negative, so that it increases the magni- tude of the total ...
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The durability of Mn–Mo–Sn–W–Sb–O/Ir<sub>1–x–y</sub>Sn<sub>x</sub>Sb<sub>y</sub>O<sub>2+0.5y</sub> /Ti oxygen evolution anode for hydrogen production from seawater electrolysis
... 1000 A.m −2 . Numbers of cracks and pores on the surface of anode are decreased to form a smooth surface after electrolysis for about 1545 h. This revealed that the filling of cracks and pores by the beneficial ions ...
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Progressing intention progression: a call for a Goal Plan Tree contest
... both sub- goals and (deterministic or nondeterministic) actions, and a simple form of parallel construct is supported (all actions and/or subgoals in a plan are executed in ...
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Structural Properties of (SnO<sub>2</sub>)<sub>1-x</sub>(ZnO)<sub>x</sub>Thin Films Deposited By Spray Pyrolysis Technique
... The study of film surfaces is deposited important to recognize how the distribution and arrangement of atoms on surfaces, and get to know the differences or homogeneity properties or attributes relating to each atom ...
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