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Si-SiC

Design, simulation and analysis of RESURF Si/SiC power LDMOSFETs

Design, simulation and analysis of RESURF Si/SiC power LDMOSFETs

... (SI) SiC substrate, forming the Si/SiC ...the Si/SiC LDMOSFETs do not have a strong substrate assisted depletion effect, which can result in poorer electrical performance than ...

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Analysis of linear doped Si/SiC power LDMOSFETs based on device simulation

Analysis of linear doped Si/SiC power LDMOSFETs based on device simulation

... the Si/SiC equivalent [see ...the Si/SiC case, the removal of the BOX removes the bottom field plate effect, leaving the bottom of the drift region ...

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Simulation of a new hybrid Si/SiC power device for harsh environment applications

Simulation of a new hybrid Si/SiC power device for harsh environment applications

... the Si thin film has been transferred directly onto a semi-insulating 6H silicon carbide (6H-SiC) substrate via a wafer bonding ...hybrid Si/SiC substrate have shown that the high thermal ...

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Sintering Behavior of Spark Plasma Sintered SiC with Si SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

Sintering Behavior of Spark Plasma Sintered SiC with Si SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

... of SiC pellets sintered with nano-sized Si-SiC composite nanoparticles during SPS ...of Si-SiC composite nanoparticles and studied on the formation of metallic Si-loaded ...

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Development of Si SiC hybrid structures for elevated temperature micro turbomachinery

Development of Si SiC hybrid structures for elevated temperature micro turbomachinery

... the SiC fracture strength of 700 MPa and the stability margin for the bearing operation of 5 , the turbine rotor needs a SiC reinforcement with at least a relative SiC thickness of ...a SiC ...

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Comparative study of RESURF Si/SiC LDMOSFETs for high temperature applications using TCAD modeling

Comparative study of RESURF Si/SiC LDMOSFETs for high temperature applications using TCAD modeling

... a Si-based integrated circuit, which leads to less difference between the junction and ambient temperature, thereby reduc- ing the need for external ...this Si-on- diamond (SOD) structure is continuing and ...

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Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

... the Si layer was un- dertaken to assess its state after wafer bonding, which ideally should be crystalline, free of stress, and free of contaminants or unwanted oxides at the ...the Si/SiC structure ...

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Numerical study of energy capability of Si/SiC LDMOSFETs

Numerical study of energy capability of Si/SiC LDMOSFETs

... of Si/SiC devices [2, 3] shows that the quality of the Si on SiC can be similar to those of the SOI and even bulk Si, with appreciable improvement in self- ...the SI SiC ...

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Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs

Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs

... of Si IGBTs and diodes in a bidirectional arrangement with a matrix of SiC JFET ...all Si, combined Si-SiC arrangements and all SiC commutation cells together with potential ...

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The effect of interfacial charge on the development of wafer bonded silicon on silicon carbide power devices

The effect of interfacial charge on the development of wafer bonded silicon on silicon carbide power devices

... the Si layer is n-type then there is now a p+-n diode, which will have formed next to the P+ ...the Si/SiC; and a much lower resistance (conductivity ...

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Interfacial Phenomena between Liquid Si-Rich Si-Zr Alloys and Glassy Carbon

Interfacial Phenomena between Liquid Si-Rich Si-Zr Alloys and Glassy Carbon

... liquid Si in contact with the amorphous C and with SiC ...liquid Si and Si-based alloys is driven by a combination of reactive and non-reactive mechanisms, as described in ...interfacial ...

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Tribological Efeect On Aluminium Silicon Alloys And Aluminium Silicon Carbide Composite

Tribological Efeect On Aluminium Silicon Alloys And Aluminium Silicon Carbide Composite

... In recent decade, Aluminium-Silicon composites have potentially grown up in engineering structural applications ranging from automobile & aerospace industries to marine industries. Due to high strength to weight ...

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Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

... It is tempting to compare the results of these calculations with barrier heights used to interpret tunneling studies on MOS devices with ultrathin gate dielectrics; however, the extraction of effective barrier heights ...

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LV converters : improving efficiency and EMI using Si MOSFET MMC and experimentally exploring slowed switching

LV converters : improving efficiency and EMI using Si MOSFET MMC and experimentally exploring slowed switching

... Radiated emissions were measured using Tekbox near-field probes with 40-dB wideband amplification, see Fig. 10. Both magnetic fields (H-fields) and electric fields (E-fields) were measured, with the probe positioned at ...

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Measurement and Thermodynamic Analysis of Carbon Solubility in Si Cr Alloys at SiC Saturation

Measurement and Thermodynamic Analysis of Carbon Solubility in Si Cr Alloys at SiC Saturation

... in Si–Cr alloys; that at 2073 K is shown in ...the SiC-saturated liquid Si–Cr–C alloy corresponded to that in the binary Si–Cr alloy at the same silicon ...at SiC saturation are ...

5

Wear Characteristics in Al SiC Particulate Composites and the Al Si Piston Alloy

Wear Characteristics in Al SiC Particulate Composites and the Al Si Piston Alloy

... The Al-SiC composites have been prepared using Liquid Metallurgy technique employing 2124 Al- alloy as the base material with 10 and 20 % SiC particulates by weight. The abrasive wear study has been ...

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Temperature and switching rate dependence of crosstalk in Si IGBT and SiC power modules

Temperature and switching rate dependence of crosstalk in Si IGBT and SiC power modules

... the Si-IGBT at different temperatures and Figure 13(b,d) shows the corresponding shoot-through current at different ...the SiC power module whereas Figure 13(d) shows the corresponding shoot-through ...the ...

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Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter

Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter

... The Device (see Fig. 4) consists of electronically controlled ion sources with magneto optic flux concentration with the ion energy of up to 50 keV, electronically controlled pulsed accelerator sec- tions that form ...

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Comparison between SiC  and Si Based Inverters for Photovoltaic Power Generation Systems

Comparison between SiC and Si Based Inverters for Photovoltaic Power Generation Systems

... the SiC-based inverter compared with the Si-based ...the Si inverter, which was not included in the present ...the Si inverter compared with the SiC ...of SiC MOSFETs ...

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Phase Relations in Si Al Y O C Systems

Phase Relations in Si Al Y O C Systems

... Combing the phase diagrams of Al2O3-Y2O3-SiC system with Al2O3-Y2O3-SiO2 system [18] the tentative phase diagram of quaternary SiC-Al2O3-Y2O3-SiO2 Si-Al-Y-O-C system can be presented as [r] ...

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