Si-SiO2
Optical Properties of Si-SiO2 Interfaces by Linear and Nonlinear Optical Techniques
... As-terminated Si and Ge surfaces this assumption is not a good ...in Si- SiO2 materials because we find that it accurately describes the SHG anisotropies that we observe with an absolute minimum ...
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Effects of Si Layer Thickness Ratio on UV Light Emission Intensity from Si/SiO2 Multilayered Thin Films Prepared Using Radio Frequency Sputtering
... of Si nanocrystals in the film, which might affect the intensity of the UV light emission from the ...estimated Si-layer-thickness ratios, and measured the photoluminescence spectra of the samples after ...
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Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces
... the Si substrate into oxide and increases the coordination of the interface Si atom of the substrate with oxygen atoms from one to ...and Si sub- strate ...
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The Influence of Different Type Irradiations on the Surface States Parameters of Si SiO2 Structures
... tion of MOS structure with different types of radiation has shown that, depending on the interaction mechanism between the bombarding particles and MOS structure atoms, radiation surface states of different nature are ...
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The Modelization of the Wet Etching Rate by the Segregation Boron and Phosphorus Distributions in Si/SiO2
... In another part, for doped oxide by boron or phosphorus, the etching rate is either uncontrollable respectively at the beginning of the attack (at surface) or at the end of the attack (the interface). This suggests ...
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On Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation
... 483 nm) solution (10 wt%) was purchased from Bangs Laboratories, Inc. (Fishers, IN, USA). After the colloidal sphere monolayer coating, the diameter of the PS spheres was reduced via plasma etching with an aniso- tropic ...
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Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface
... the Si substrate, and second, their number can be reduced by more than a factor of 50 by a postmetallization anneal 共 PMA 兲 in a hydrogen-containing ...the Si forbidden band gap that are revealed by ...
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Using steps at the Si SiO2 interface to test simple bond models of the optical second harmonic response
... comparison [16]). Ten independent dipolar tensor components are allowed for interfaces of 1m symmetry and, for cubic media such as bulk Si, the quadrupolar tensor components reduce to one isotropic parameter, γ , ...
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Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation
... Usually, spatially confined exciton due to quantum con- finement effect is considered to play a dominant role in enhanced nonlinear optical property of nc-Si film. Prakash et al. reported the size-dependent ...
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Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc Si/SiO2 Structures
... silicon bonds Si 3+ [29]. However, the above mentioned surface defects were invoked to explain the relatively low emission energy of small Si nanocrystallites (with the sizes less than ~2.8 nm [28]), when ...
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Measurement and Control of In-plane Surface Chemistry at the Si/SiO2 Interface.
... vicinal Si(100) charge redistribution from step-edges to underlying back bonds occurs, thus providing a qualitative microscopic view of step-edge ...of Si surface ...the Si/SiO 2 interface to ...
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Multiple Layers of Silicon-Silica (Si-SiO2) Pair onto Silicon Substrate towards Highly Efficient, Wideband Silicon Photonic Grating Coupler
... 5(c)-(d) show the TE mode profiles of light from the point of incidence of the grating coupler along the Si waveguide. The incident light, that is scattered by the surface gratings, propagates in +x, –x, and –y ...
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Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition
... diffusion barrier, ~ 2 ! highly deceleratory growth of a-Si re- gions form SiO(x 1 y ) diffusion gradient, ~ 3 ! crystallization of a-Si regions into Si nanocrystals. FTIR, PL, TEM, Ra- man, and ...
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Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces
... The Si–SiO 2 films were measured by CL at room tem- perature and T ; 90 K. As shown schematically in Fig. 1, an electron gun employing voltages and currents in the range 0.6–4.5 keV and ; 1.0–4.0 m A, ...
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Optimization of a Si SiO2 Waveguide Coupler for Photonic Integrated Circuits
... DOI: 10.4236/cs.2018.97010 102 Circuits and Systems matically shown in Figure 1. Light at communication wavelength of 1550 nm is launched from the input port made of 430 nm thick Si (with refractive index of 3.5). ...
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← Return to Article Details NANOSTRUCTURAL CHARACTERIZATION AND LATTICE STRAIN OF TiO2-Al2O3-SiO2 COATING ON GLASS AND SI (100) SUBSTRATES
... The influence of molar ratio on grain size of different phases, as seen by the decrease in size of grains when the molar ratio is increased due to the increase in the content of TTIP and ATSB in composite (Table 2). ...
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Sub-barrier fusion of Si+Si systems
... potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the ...
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Comparison of Photocatalytic Reduction on Nicotinium Dicromate using SiO2, TiO2 and Composite SiO2- TiO2
... SiO 2 and TiO 2 -SiO 2 using parameters catalyst doses, contact time, initial concentration of NDC solution and pH. Effect of Catalyst, TiO 2 doses and contact time on the Photoreduct[r] ...
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ELECTRONIC STRUCTURE OF GE IN SIO2
... We employ a simple model which enables us to estimate this correlationeffect in terms of interactions between the unpaired electron and the valence electrons localised at the nearest[r] ...
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Performance analysis of crystalline (poly Si) and thin film (a Si/c Si) photovoltaic systems
... From Figure-4, it can be clearly observed that the value of PR of the Poly-Si module is average above 1. This result was not possible because the maximum value of PR for crystalline silicone cell was 1 when ...
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