single-electron OR gate
New Model for Drain and Gate Current of Single Electron Transistor at High Temperature
... The phenomenal success of semiconductor electronics during the past three decades was based on the scaling down of silicon field effect transistors (MOSFET). The most authoritative industrial forecast, the International ...
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Modeling and simulation of single-electron transistors
... Single electron transistor consists of an island in between a source and drain, with a gate voltage exerted on the ...so-called Single-Electron Transistor is due to its operation in ...
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Single Electron Devices and Circuit Architectures: Modeling Techniques, Dynamic Characteristics, and Reliability Analysis
... iii) gate types and gate reliabilities, which play a key role in determining M and R (the output reliability ...individual gate reliabilities affect the overall reliability for given primary input ...
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Gate-based single-shot readout of spins in silicon
... an electron reservoir[18] allows qubit measurement by mapping the spin informa- tion to a detectable charge ...and single electron tran- sistor (SET) charge sensors to sense nearby quantum dots has ...
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Calculation of Characteristics of the Single Electron Transistor
... The SET consists of two electrodes known as the drain and the source, connected through tunnel junctions to one common electrode with a low self-capacitance, known as the island. The electrical potential of the island ...
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Basic Introduction To Single Electron Transistor
... a gate electrode was proposed by a number of researchers, and Kulik and Shekhter developed the theory of Coulomb-blockade oscillations, the periodic variation of conductance as a function of gate ...a ...
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Analysis of multi phase clocked electron pumps consisting of single electron transistors
... of electron pump circuits composed of multiple tunnel junctions 共 MTJs 兲 ...side gate, ultrasmall islands appeared in the two- dimensional electron gas 共 2DEG 兲 layer due to randomly dis- tributed ...
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Double gate control of electronic transport in nanoscale point contact in neo silicon
... of single-electron transport is observed in point-contact transistors fabricated in nanocrystalline silicon thin films, where the grain size is 10 to 40 ...K, single-electron oscillations in ...
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Intrinsic magnetic refrigeration of a single electron transistor
... scanning electron micrograph of the ...back- gate, we will show that the nature of the back gate is not im- portant for the effect that we discuss in this ...back gate to modulate the device ...
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Quantitative Modeling and Simulation of Single Electron Transistor
... Now to analysis the dc characteristic of SET, firstly it is assume that V ds may be zero or may have any fixed value. From equation 13-15, It is shown in Fig.10 that, by increase of the channel width, the Coulomb ...
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Single electron spintronics
... There is a great deal of published theory concerning single-electron devices em- bedded in magnetic tunnel junctions [44]. One of the most important predictions is that an oscillatory dependence of TMR on ...
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Application of Single Electron Threshold Logic based Device: - A case study
... the Single electron devices promising capabilities to replace CMOS transistors in some ...as single electron technology. In this paper, we investigate single electron threshold ...
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A Low Power Multiple Valued Logic SRAM Cell Using Single Electron Devices
... Negative differential conductance (NDC) devices have previously been proposed for compact static memory applications. E. Goto [11] disclosed an SRAM cell consisting of two resonant tunnel diodes (RTDs) and a ...
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Electrostatically defined quantum dots in a two dimensional electron/hole gas at the Si and SiO2 interface
... The prediction of Gordon Moore in 1965 that the number of transistors in a dense integrated circuit would continue to double every two years led to a business model of miniaturizing in the semiconductor industry [1]. ...
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Design of High performance Digital Logic Circuits based on FinFET Technology
... Figure 1 shows the top view of a single-fin double-gate (DG) FinFET realized using Sentaurus Structure Editor [11]. The device structure is having two gates (front and back gates). The most common mode of ...
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SOI based nanowire single-electron transistors: design, simulation and process development
... back gate) ...a gate voltage [12]. Therefore, it is generally assumed that single-electron devices have potential to be much faster than conventional ...
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An unexpected TTFAQ donor–fluorene acceptor reaction resulting in a novel salt: 2,6 dihexyloxy 9,10 bis(4,5 dimethyl 1,3 dithiol 2 ylium) anthracene bis(2,5,7 trinitro 4 bromo 9 cyanofluorenide) dioxane trisolvate
... Strong electron acceptors of the ¯uorenone and 9-di- cyanomethylene¯uorene series, in addition to charge-transfer interaction with electron donors (or a single electron transfer process in the ...
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Design and Comparative Analysis of Single Gate Tunnel FET and MOSFET
... MOSFET is basic building block of most integrated circuits because the MOSFET has become tinier, generation by generation, the chips supported it became a lot of quicker and fewer power hungry than their predecessors ...
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Carbon Nano Tubes in Field Effect of Transistor
... promotes electron conduction via a completely different mechanism: the presence of atmospheric oxygen near the metal/nanotube contacts affects the local bending of the conduction and valence bands in the nanotube ...
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Randomized benchmarking with gate-dependent noise
... of gate- dependent fluctuations in section ...for gate-dependent noise do not justify fitting RB experiments to single exponential decays in section ...
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