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Tunnel Junctions

Tunnelling effects in multiferroic tunnel junctions

Tunnelling effects in multiferroic tunnel junctions

... to tunnel between the two electrodes, similar to the better known MTJ ...multiferroic tunnel junctions are obtained which can be controlled by both electric and magnetic field [116, 117, ...

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The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions

The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions

... magnetic tunnel junctions (MTJs) emerged as a promising component for magnetic sensors and magnetic random access memory ...MgO tunnel barriers in magnetic tunnel junctions has recently ...

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Bi ferroic memristive properties of multiferroic tunnel junctions

Bi ferroic memristive properties of multiferroic tunnel junctions

... Magnetic tunnel junctions (MTJs), composed of a thin dielectric barrier sandwiched between two ferromagnetic elec- trodes, present the tunnelling magnetoresistance (TMR) effect which shows two distinct ...

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DESIGN AND ANALYSIS OF HIGH EFFICIENCY MULTI-JUNCTION SOLAR CELLS WITH TUNNEL JUNCTIONS

DESIGN AND ANALYSIS OF HIGH EFFICIENCY MULTI-JUNCTION SOLAR CELLS WITH TUNNEL JUNCTIONS

... Multi-junction solar cells (MJSC) are the future of renewable energy production. MJSC have rapidly gone laboratory cells, to large-area, high-efficiency manufacturing cells. The introduction of wide-bandgap tunnel ...

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Electronic transport through EuO spin filter tunnel junctions

Electronic transport through EuO spin filter tunnel junctions

... (Received 9 July 2012; revised manuscript received 11 September 2012; published 12 November 2012) Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are ...

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Exchange biased magnetic tunnel junctions with antiferromagnetic epsilon Mn3Ga

Exchange biased magnetic tunnel junctions with antiferromagnetic epsilon Mn3Ga

... bottom-pinned synthetic antiferromagnet magnetic tunnel junctions with MgO barriers, which show up to 150% tunneling magnetoresistance at room temperature. Exchange bias fields as high as 150 mT can be ...

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Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

... A significant problem for the application of MTJs is the decrease in TMR with increasing bias voltage across the junction, as it degrades the signal-to-noise ratio. Various ex- planations for TMR bias dependence have ...

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Resonant tunnelling in Dy  or Gd doped Al2O3 magnetic tunnel junctions

Resonant tunnelling in Dy or Gd doped Al2O3 magnetic tunnel junctions

... doped tunnel junctions provide the ideal system to study resonant tunnelling in the presence of paramagnetic ...made junctions in which the entire barrier was made up of Dy 2 O 3 or Gd 2 O 3 ...

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Temperature dependence of shot noise in double barrier magnetic tunnel junctions

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

... Magnetic tunnel junctions (MTJs) [1,2] have broad applica- tion prospects due to their giant tunneling magnetoresistance (TMR) ...magnetic tunnel junctions (DBMTJs) have potential advantages ...

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Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer

Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer

... Magnetic tunnel junctions (MTJs) with crystalline MgO barriers have been extensively studied due to their high tun- neling magnetoresistance (TMR) and potential for applica- tions in spin torque driven ...

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A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions

A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions

... For the last twenty years, the intensive investigation of giant magnetoresistance (GMR) in magnetic multilayers and tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJ) has offered a rather ...

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Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer

Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer

... magnetic tunnel junctions with a thin top MgO ...normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of pinholes in the thin ...

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Magnetically soft, high moment grain refined Fe films: application to magnetic tunnel junctions

Magnetically soft, high moment grain refined Fe films: application to magnetic tunnel junctions

... The effect of N-doping on the microstructure and magnetic properties of thin Fe layers has been employed to construct all Fe-electrode magnetic tunnel junctions that displayed the tunneling ...

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Resonant electronic states and I V curves of Fe/MgO/Fe(100) tunnel junctions

Resonant electronic states and I V curves of Fe/MgO/Fe(100) tunnel junctions

... the tunnel magnetoresistance 共 TMR 兲 of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the nonequilibrium Green’s-function method with ...

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Effects of structural relaxation on calculations of the interface and transport properties of Fe/MgO(001) tunnel junctions

Effects of structural relaxation on calculations of the interface and transport properties of Fe/MgO(001) tunnel junctions

... The relaxation of the interface structure of Fe/MgO 共 100 兲 magnetic tunnel junctions predicted by density- functional theory depends significantly on the choice of exchange and correlation functional. ...

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Annealing effect on tunneling magnetoresistance in MgO based magnetic tunnel junctions with FeMn exchange bias layer

Annealing effect on tunneling magnetoresistance in MgO based magnetic tunnel junctions with FeMn exchange bias layer

... Coey, Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer, Journal of Magnetism and Magnetic Materials, doi:10.1016/j.jmm[r] ...

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Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

... Current information technology relies on the advancement of nanofabrication techniques. For instance, the latest computer memories and hard disk drive read heads are designed with a 12 nm node and 20 nm wide ...

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Superparamagnetism in MgO based magnetic tunnel junctions with a thin pinned ferromagnetic electrode

Superparamagnetism in MgO based magnetic tunnel junctions with a thin pinned ferromagnetic electrode

... magnetic tunnel junctions have been fabricated with a thin Co 40 Fe 40 B 20 共 CoFeB 兲 layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB ...

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Study of Two One Dimensional Multi Tunnel Junctions Arrays Structures by SIMON

Study of Two One Dimensional Multi Tunnel Junctions Arrays Structures by SIMON

... energy is much higher than the thermal energy. Therefore increase the number of tunnel junctions network can overcome the effect of low capacity and temperature operating. The staircase is typically ...

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Polarization curling and flux closures in multiferroic tunnel junctions

Polarization curling and flux closures in multiferroic tunnel junctions

... Formation of domain walls in ferroelectrics is not energetically favourable in low-dimensional systems. Instead, vortex-type structures are formed that are driven by depolarization fields occurring in such systems. ...

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