two-section 1.3 /spl mu/m InAs quantum dot laser
Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... a quantum dot superlattice ...to 1 in contrast to structures with unbounded QDs, where the ratio is about ...(FOLs). Two sectional PML laser diodes with an absorbing section ...
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Bright Single Photon Source at 1 3 μm Based on InAs Bilayer Quantum Dot in Micropillar
... He-Ne laser at wavelength of 633 ...the laser into a spot in a diameter of 2 μm and collects the luminescence effectively into a spec- trograph, which enables a scanning of microregion to search single QD ...
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Kroner, Martin (2008): Resonant photon-exciton interaction in semiconductor quantum dots. Dissertation, LMU München: Fakultät für Physik
... a quantum interference takes place between two competing optical pathways, one connecting the ground state and an excited discrete state, the other connecting the ground state with a ...a laser field ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... in laser operation is an essen- tial characteristic required for the long-wavelength semi- conductor lasers in optical communication ...μ m quantum-dot (QD) lasers has attracted intensive ...
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Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells
... ∼ 1 V, however, the inclusion of multiple layers of wider band gap semiconductors will significantly alter the energy band structure and the validity of comparisons with QD-IBSCs (or indeed GaAs control solar ...
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Ultrashort pulse generation from quantum dot semiconductor diode lasers
... QD two-section laser was 80GHz [41], when a 15-layer structure was ...gain section. Two counter-propagating pulses from each outer gain section therefore meet in the saturable ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... usual quantum-well (QW) lasers, in many aspects including threshold current, thermal stability, modulation bandwidth, and spectral band-width, that is similar to an impulse function due to discrete mode density ...
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Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing
... the two states is approximately 71 meV. Thus, in the as-grown laser, GS lasing dominates at low bias currents, while ES lasing dominates at higher bias cur- ...
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InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application
... emit two lines of different wavelengths simultaneously [14, ...external-cavity laser system are nei- ther convenience nor stable for wavelength ...using two independ- ent DFB laser beams of ...
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Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells
... ∼ 1 V, however, the inclusion of multiple layers of wider band gap semiconductors will significantly alter the energy band structure and the validity of comparisons with QD-IBSCs (or indeed GaAs control solar ...
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A high performance quantum dot superluminescent diode with a two section structure
... self-assembled quantum dots [QDs] [10-12] and quantum well grown on a high-index surface are benefi- cial to broaden the spectral bandwidth of the device ...broadband laser diodes ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... between InAs layers and GaAs substrate [8]. The growth of InAs on GaAs (001) substrate results in the formation of a three-dimensional (3D) island shape on the InAs with the Stranski-Krastanov (SK) ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...the quantum well, the superior attributes of the quantum dot has encouraged ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... ∼ 1 . 4 µ m thick active region), and thus its influence on the conductivity and lifetimes of the sample is ...is two-fold: to reflect the pump beam thus reducing the IR power at the antenna output, ...
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Optical characterization of In flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm
... In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam ...self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μ m regime, ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... three 1 x 0.5 cm 2 concentrator-designed grid cells, two quantum efficiency pads, transmission line model (TLM) measurement pads A broadband/g-line ultraviolet light source was calibrated to 10 mW/cm ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... InAs/GaAs quantum dots were grown by Molecular Beam Epitaxy on Silicon substrates and then fabricated into mesa diodes with optical ...of InAs/InGaAs dot-in-a-well (DWELL) each separated by a ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... In(Ga)As quantum dots on silicon [7] and Ge [8] substrates, to realize lasing at a wavelength of 1300 nm ...[9]. Quantum dots are expected to offer several advantages over the current approach of bulk Ge on ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... For structure and contact designing as well as under- standing of the energy profile for both structures composed by the InGaAs or GaAs MBs, In(Ga)As QDs, undoped cap layer, and Au/AuGeNi contacts, the calcu- lations ...
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Quantum Dot Interdiffusion For Two Colour Quantum Dot Infrared Photodetectors
... Once all of the settings have been input, and the measurement button pressed, the pro- gram follows a simple loop, first carrying out the required device initialisation in figure A.2. The initialisation is a simple ...
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