[PDF] Top 20 On the modified active region design of interband cascade lasers

... types of structures, one grown on a GaSb substrate and designed for shorter wavelength of about 4 lm, but also the second one grown on an InAs substrate, with the emission in the 6–7 lm range. The mentioned benefits have ... See full document

... In this work, we investigate the interface intermixing in the type II structures of InAs/GaIn(As)Sb/InAs and its consequences to the QW electronic structure and op- tical properties. We compare the results of ... See full document

... the design of active regions of improved per- formance interband cascade lasers and that additional work on the technological side is necessary to minimize interface diffusion when ... See full document

... of active regions with appropriate injectors/collectors are developed, with the inten- tion of focusing on two important design features: improved temperature behavior and a more efficient extraction mecha- ... See full document

... Figure 3 shows a comparison between the calculated transition energies (plotted in function of the InAs layer thickness) and the experimental values from the PL spectra. As it can be seen, a very good agreement has been ... See full document

... tion layer. These devices were tested in cw mode. Finally, DFB devices were processed in a similar fashion. To achieve spectrally single-mode emission, electron beam defined metal gratings were deposited at the sides of ... See full document

... Heterogeneous cascading can be made possible then by merging cascades with different emission wavelengths into one waveguide, while reabsorption can be avoided by appropriate design. This has been done in order to ... See full document

... the active region levels and the lowest injector state as a percentage of the total number of electrons in one ...the design field of 128 kV/cm at a lattice tem- perature of 77 K, over 50% of the ... See full document

... the active region temperature range are the heat sink temperature (which deter- mines the thermal conductivities of the materials and the source power density) and the pulsewidth (determines how much the ... See full document

... Recently InGaAs/AlAsSb QCLs lattice matched to InP sub- strates have been reported [7]. The InGaAs/AlAsSb het- erostructure has a very large conduction band offset of ∼1.6 eV which is almost double that of the strained ... See full document

... crucial design parameters, as well as an understanding of the relevant physical limitations of particular designs, it is highly desirable to investigate the influences of the relevant physi- cal and technological ... See full document

... ICLs‘ active region band structure under external electric field, performed in the framework of eight-band k · p theory, in order to investigate the effect of the bias value and direction, ...respectively ... See full document

... the active region design exhibiting large di ff erence in the OS when the bias is reversed (the respective carrier lifetimes are inversely proportional to the ...studied design utilizes a ... See full document

... pumped interband cascade vertical-cavity surface-emitting laser (VCSEL) has been demonstrated 14 in pulsed operation at a wavelength of k ...stage active region design (k ¼ 4 lm) ... See full document

... DFB lasers, the widely-tunable ICL devices require the definition of a two-section device structure with suitable electrical separation between the ...the active region and the lower SCL, resulting ... See full document

... Quantum cascade lasers (QCLs) are relatively new semiconductor devices [1]-[3]. Nevertheless, they have been successfully used both in scientific research [4-5] and industry applications [6] due to their ... See full document

... FIG. 2. (Color online) (a) Peak power–current density characteristics as a function of heat sink temperature for a 7.5-µm-thick AR driven at 2% duty-cycle at a repetition rate of 10 kHz, with the pulse train being ... See full document

... In order to test the modulation speed of the device, a more powerful, stable and narrow frequency THz source is required. A bound to continuum quantum cascade laser was used for all these measurements. The QCL ... See full document

... THz semiconductor lasers Semiconductor device requirements: ¥ Low enough energy level separation for THz photon emission ¥ More electrons at high energy than low energy i.e., a populatio[r] ... See full document

... The output properties of the optimized structure are calculated by using the full self-consistent rate equation model which includes both carrier and photon densities [5, 17], while the [r] ... See full document