[PDF] Top 20 Spin effects in InAs self assembled quantum dots
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Spin effects in InAs self assembled quantum dots
... emission is a rather complex issue as it depends on var- ious parameters, including the g-factors of the different layers, the resonant and non-resonant tunneling pro- cesses, the capture dynamics of the carriers by the ... See full document
5
Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain
... nuclear spin coherence. In order to access the nuclear spin coherence, we use time-domain (pulsed) NMR 23 : the timing diagram of the pulsed NMR experiment is shown in ... See full document
7
Growth kinetics of MPS capped CdS quantum dots in self assembled thin films
... CdS quantum dots were self-assembled directly on a glass substrate using spin-coating method without introducing any ...of quantum dots changed from ... See full document
7
Terahertz optical sideband emission in self-assembled quantum dots
... conversion efficiency for the n = + 1 sideband was evaluated as a function of FEL power and found to have a linear dependence up to high powers, where a decrease in efficiency then occurs due to internal heating of the ... See full document
10
AN EVALUATION OF ELECTRON ENERGY LEVELS IN A TRANSVERSE MAGNETIC FIELD FOR INAS/INP AND SELF-ASSEMBLED QUANTUM WIRES
... with quantum confined electronic states are probably uses in ...Low-dimensional quantum nano structured such as quantum well (QW), quantum wire (QWR) and quantum dots (QD) have ... See full document
22
In situ accurate control of 2D 3D transition parameters for growth of low density InAs/GaAs self assembled quantum dots
... and 5a show a series of micro-PL of decreasing △ from samples 1 to 6. We can find that the micro-PL spectra are multiple lines when △ > 0 and become a sharp single line when △ ≤ 0. As shown in Figure 5a,b, under the ... See full document
6
Electron wave function spillover in self assembled InAs/InP quantum wires
... in InAs/ InP self-assembled quantum wires is studied experimentally using photolumi- nescence in pulsed magnetic fields and theoretically using adiabatic theory within the effective-mass ... See full document
7
Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self Assembled Nanoholes
... on self-assembling mechanisms during epitaxial growth allow the integration of QD layers into semiconductor ...strain-induced InAs QDs grown on GaAs in the Stranski– Krastanov mode ...for ... See full document
5
Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots
... actual dots are probed using advanced local probe techniques that provide excellent spatial and spectral ...few dots or even one ...single quantum dots display 2D-like conti- nuum states and a ... See full document
7
Analysis of the 3D distribution of stacked self assembled quantum dots by electron tomography
... surface amorphous layer. We have previously reported in detail the procedure to fabricate such needles from semiconductor materials [23]. In short, the method con- sists on protecting the surface of the bulk material by ... See full document
6
Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...the quantum well, the superior attributes of the quantum dot has encouraged further research ... See full document
6
Electron and hole confinement in stacked self assembled InP quantum dots
... of self-aligning stacks of self-assembled quantum dots can be grown, but with the ad- vantage over single layers that the layer separation, number, and even dot size can be ...the ... See full document
5
Temperature dependence of the photoluminescence of self assembled InAs/GaAs quantum dots in pulsed magnetic fields
... the dots, we then studied the magneto-PL of the sample at different temperatures and with different orien- tations of the field with respect to the growth ... See full document
5
Optical characterization of In flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm
... In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam ...of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μ ... See full document
6
Decoherence and fluctuation dynamics of the quantum dot nuclear spin bath probed by nuclear magnetic resonance
... nuclear spin decoherence and nuclear spin flip-flops in self-assembled InGaAs/GaAs quantum dots are studied experimentally using optically detected nuclear magnetic resonance ... See full document
7
A Theoretical Evaluation of Spectral Function of Mutual Coupling of Two Semiconductor Quantum Dots via an Optical Nanocavity
... separated self-assembled InGaAs quantum dots coupled to optical nano cavity ...two quantum dots exhibit markedly different DC Stark ... See full document
10
Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots
... The commonly accepted thermodynamic understand- ing of the SK mode describes the QD formation on top of a WL of a certain thickness. However, it is not accur- ate in real situations. It has been reported that in the ... See full document
6
Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... enhancement factor [3], have been realized through p-doping technique. However, quantum-dots emitting at 1.3 μ m and above have not fulfilled the initial expecta- tion of improved temperature-insensitive ... See full document
5
Nuclear spin switch in semiconductor quantum dots
... InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a threshold-like enhancement or ... See full document
5
Probing the carrier transfer processes in a self assembled system with In0 3Ga0 7As/GaAs quantum dots by photoluminescence excitation spectroscopy
... of InAs QDs [12]; (v) growth on high-index-oriented GaAs substrate [13]; (vi) growth of InGaAs/GaAs quantum dot chains [14,15]; (vii) growth of strongly elongated InAs QDs on InP substrate ...of ... See full document
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