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double-gate device technology

Threshold Voltage Sensitivity to Metal Gate Work Function Based Performance Evaluation of Double Gate n FinFET Structures for LSTP Technology

Threshold Voltage Sensitivity to Metal Gate Work Function Based Performance Evaluation of Double Gate n FinFET Structures for LSTP Technology

... as gate materials since the evolution of MOS transistor device ...metal gate in place of conventional polycrystalline ...high gate resistance, dopant penetration to channel region and an ...

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A Short Channel Double Gate MOSFET Model

A Short Channel Double Gate MOSFET Model

... new device structure for next generation technologies is used such as Silicon on Insulator(SOI) MOSFET and double gate (DG) MOSFET(to name a ...few). Double gate MOSFET is a type of ...

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Peripheral Circuits Design of a Double Floating Gate Memory

Peripheral Circuits Design of a Double Floating Gate Memory

... 16nm technology did not have a complete leakage current control mechanism, which can heat up the whole ...control gate and top floating ...the double floating gate FET has a huge threshold ...

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Design of High performance and Low Power 8T Full Adder Cell Using Double Gate MOSFET at 45nm Technology

Design of High performance and Low Power 8T Full Adder Cell Using Double Gate MOSFET at 45nm Technology

... using double gate MOSFET which consume low power and give faster ...8 double gate transistors so it is called 8T adder ...higher gate count full adders, lower power consumption and low ...

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Optimization of process parameter variations on threshold voltage in 
		Ultrathin Pillar Vertical Double Gate MOSFET Device

Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device

... MOSFET’s device makes great improvement in MOSFET’s operation (Taur and Ning, ...MOSFET device has been attempted to be scaled down is to pack more and more MOSFET devices in a given chip ...

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Design of Low Power 4bit 6T Sram Cell for Data Storage using Finfet 32NM Technology

Design of Low Power 4bit 6T Sram Cell for Data Storage using Finfet 32NM Technology

... vital device (component) is SRAM and its arrays for designing of larger VLSI ...transistor device is scaled down to smaller Width to Length (W/L) ratio and same is used for designing of the SRAM‟s then ...

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Circuit design with Independent Double Gate Transistors

Circuit design with Independent Double Gate Transistors

... independent double gate transistors the number of transistors can be reduced from four to two, merging transistors in parallel and in series as shown in ...for double gate MOSFET, but with ...

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NAND GATE USING FINFET FOR NANOSCALE TECHNOLOGY

NAND GATE USING FINFET FOR NANOSCALE TECHNOLOGY

... propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple ...

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Performance of Double Pole Four Throw  Double Gate RF CMOS Switch in 45 nm Technology

Performance of Double Pole Four Throw Double Gate RF CMOS Switch in 45 nm Technology

... high-speed double-pole four-throw double-gate radio-frequency com- plementary-metal-oxide-semiconductor (DP4T DG RF CMOS) ...45-nm technology and their layouts are studied to understand the ...

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Comparative Analysis of Low Power 10T and 14T Full Adder using Double Gate MOSFET at 45nm Technology

Comparative Analysis of Low Power 10T and 14T Full Adder using Double Gate MOSFET at 45nm Technology

... Double gate MOSFET will be constructed by connecting two transistors in parallel as a way that their supply and drain are connected ...together. Double gate MOSFET can be classified in two ...

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Analyze The Performance Of 16nm Double Gate Finfet Device Using Silvaco TCAD Tool

Analyze The Performance Of 16nm Double Gate Finfet Device Using Silvaco TCAD Tool

... sub-threshold leakage increases exponentially because of a drop in the threshold voltage. Current also leaks from the base node through the oxide and channel and into the underlying substrate. Process geometries have ...

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Design and Analysis of Double Gate MOSFET Operational Amplifier in 45nm CMOS Technology

Design and Analysis of Double Gate MOSFET Operational Amplifier in 45nm CMOS Technology

... bulk device, the double gate (DG) MOSFET provides a novel ...The double gate MOSFET can be configured in two topology based on the biasing of the back gate, symmetrical driven ...

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Metal Gate Process Refining Using Gate First And Gate Last Technology For 22nm N-MOSFET

Metal Gate Process Refining Using Gate First And Gate Last Technology For 22nm N-MOSFET

... is gate-first and gate-last technology. Gate- first technology was initially developed by Sematech and the IBM-led Fishkill Alliance and found that it has flaws with their ...In ...

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Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN

Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN

... Introduction of positive polarization charge by utilising an AlGaN cap layer between the gate oxide and channel is one of the promising techniques to deplete a two-dimensional hole gas (2DHG) to achieve an E-mode ...

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Design and Implementation of 32 bit ALU with 16 operations using Reversible Logic Gates

Design and Implementation of 32 bit ALU with 16 operations using Reversible Logic Gates

... having promising applications in quantum computing. This paper will deal with the design of a 32 bit reversible Arithmetic Logic Unit (ALU) with 16 operations is presented by making use of Double Peres ...

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Double Resource Allocation Handover for Vehicular Device to Device Communication

Double Resource Allocation Handover for Vehicular Device to Device Communication

... V2X, Device-to-Device (D2D) communication technology, which allows the direct communication between two mobile devices [3], is considered as a worked solution to enhance the traffic ...

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Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process

Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process

... transconductance of the transistor [72]. A poly-silicon depletion layer is formed at the poly-silicon/gate oxide interface where the active poly-silicon dopant concentration is low. Conventional CMOS processes use ...

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Research on Optimization Design of Lifting Mechanism of Hot Air Drying Room Gate

Research on Optimization Design of Lifting Mechanism of Hot Air Drying Room Gate

... hydraulic gate lifting device innovation, hand-operated door lifting device by hydraulic device to replace now in common use, movement of the lifting device is simulated by simulation ...

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SnSe2 Field Effect Transistor with High On/Off Ratio and Polarity Switchable Photoconductivity

SnSe2 Field Effect Transistor with High On/Off Ratio and Polarity Switchable Photoconductivity

... top gate are shown in ...Electric double layer (EDL) in ionic liquid or solid electrolyte possesses a high capaci- tance and can be used to achieve a very efficient charge coupling in 2D and layered ...the ...

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Double Gate Security System Based on RFID Technology

Double Gate Security System Based on RFID Technology

... barrier gate system using latest RFID technology which automates the whole security system, such as, develop a new protocol to deal with double RFID matched tags to both vehicle and driver, build a ...

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