InAs quantum dot-in-well layers
Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers
... of InAs quantum dot solar cell is proposed and ...of InAs quantum dots (QDs) in multistack solar ...compared: InAs QDs without in situ annealing with and without AlAs cap layer ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... InAs/GaAs quantum dots were grown by Molecular Beam Epitaxy on Silicon substrates and then fabricated into mesa diodes with optical ...of InAs/InGaAs dot-in-a-well (DWELL) each ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... InAs/GaAs quantum dots were grown by Molecular Beam Epitaxy on Silicon substrates and then fabricated into mesa diodes with optical ...of InAs/InGaAs dot-in-a-well (DWELL) each ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... utilize InAs quantum dot (QD) nanostructures embedded in a GaAs p-i-n solar cell device to investigate the effects of these unique ...as well as many other types of optoelectronic ...
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Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures
... In the above figure there is also field dependent photocurrent measurements for a device processed with the same material but with anti-reflection coatings applied to the facets. The measurements in this case were for ...
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Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells
... barrier layers such as AlGaAs 26,27 and ...multiple layers of wider band gap semiconductors will significantly alter the energy band structure and the validity of comparisons with QD-IBSCs (or indeed GaAs ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... In this communication, we report on a room- temperature study a ten-layer system of tunnel-coupled In(Ga)As/GaAs QD. As shown in [7,8], the structure with ten tunnel-coupled layers of In(Ga)As/GaAs QDs exhibits ...
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Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells
... stacked layers of InAs self-assembled quantum dots in the intrinsic region of a GaAs pin ...create quantum dot arrays that do not require strain ...the quantum dots at the ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... as well as under- standing of the energy profile for both structures composed by the InGaAs or GaAs MBs, In(Ga)As QDs, undoped cap layer, and Au/AuGeNi contacts, the calcu- lations were carried out using Tibercad ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... metamorphic InAs QDs have been performed in last years [37 – 39, 43], full aspects of the photoresponse mechanism still remain unclear, as along with the influence of the MB on the properties of the ...of ...
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Investigation of InAsSbP quantum dot mid-infrared sensors
... tum well infrared photodetectors (QWIPs) and quantum dot infrared photodetectors (QDIPs) are of great ...the quantum well width and barrier layer ...and InAs/GaAs, were ...
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Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell
... five layers of QDs arranged perpen- dicular to the NW growth ...wetting layers (WLs) contribute to sub-bandgap photon absorption, extending the absorption spectrum to 950 ...QD layers located in the ...
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Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... capping/separating layers; a 35 nm GaAs spacer layer; a 25-period AlAs/GaAs distributed Bragg reflector (DBR) to retroreflect any optical pump not absorbed by the active PC volume; and the semi-insulating GaAs ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... The operating wavelengths of the QD active part of the PCA were selected to fall into the operation band of previously demonstrated compact ultrafast semiconductor lasers [9]. The PCA wafer structure also had a 30 nm top ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... between InAs layers and GaAs substrate [8]. The growth of InAs on GaAs (001) substrate results in the formation of a three-dimensional (3D) island shape on the InAs with the Stranski-Krastanov ...
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Effects of annealing on performances of 1 3 μm InAs InGaAs GaAs quantum dot electroabsorption modulators
... QD-EAM will also require a significant reverse bias volt- age (≥2 V in this case) for small-signal frequency response. Again, this is undesirable for on-chip integra- tion. On the other hand, annealed QDs are proposed to ...
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Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
... in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs ...(311)B-oriented quantum dot superlattices measured in polarized scattering ...are well described by the ...
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Chirped InGaAs quantum dot molecules for broadband applications
... cladding layers such as Al(Ga)As/ GaAs superlattices can be employed to increase lumi- nescence efficiency of the ...bulk InAs parameters (see ...QDM layers which have been explained by thermal acti- ...
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... spacer layers of the last SLSs, the dislocation density is reduced to the order of 10 5 cm -2 beyond the measurement capability of ...typical dot size is ~20 nm in diameter and ~7 nm in height, as shown in ...
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Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot In Well Structure
... the InAs QDs, which is the primary cause of PL emis- sion redshift ...The InAs QD is defined in a spherical crown shape (width 40 nm, height 5 nm) and is enveloped by the InGaAs matrix (SBL down and SRL ...
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