ingaas quantum
Dynamic vibronic coupling in InGaAs quantum dots
... and quantum well samples, where the coherence time is only a few picoseconds at best ...in InGaAs quantum dots man- ifests itself in a number of important experimental sit- ...
10
Chirped InGaAs quantum dot molecules for broadband applications
... Lateral InGaAs quantum dot molecules (QDMs) formed by partial-cap and regrowth technique exhibit two ground- state (GS) peaks controllable via the thicknesses of InAs seed quantum dots (x), GaAs cap ...
9
InGaAs Quantum Well Grown on High Index Surfaces for Superluminescent Diode Applications
... p-type-doped quantum dot superluminescent LED with broadband and flat- topped emission spectra obtained by post-growth intermixing under a GaAs proximity ...multiple quantum well broad spectral width super- ...
6
Energy state of InGaAs quantum dots on SiO2 patterned vicinal substrate
... increased. These results indicate that the energy states of first and second peaks mean the ground and excited states, respectively. Therefore, it was confirmed that the excellent formation of SAQDs having well-confined ...
5
Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells
... between quantum well (QW) excitons and the photonic mode of a planar semi- conductor microcavity ...and quantum vortices in polariton ...embedded InGaAs QWs under non-resonant ...
5
Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
... semiconductor quantum dots QDs particularly InGaAs QDs grown on GaAs substrates, is crucial for both fundamental research and optoelectronic device ...of InGaAs QDs to correlate directly composition, ...
11
Interfacing Spins in an InGaAs Quantum Dot to a Semiconductor Waveguide Circuit Using Emitted Photons
... In this work we employ a crossed photonic nanowire waveguide device, where the polarisation of a photon emitted by a QD at the intersection is converted to a path- encoded state, with the x(y)-polarisation component ...
26
Dynamically controlled resonance fluorescence spectra from a doubly dressed single InGaAs quantum dot
... semiconductor quantum dots (QDs) have attracted considerable interest in both fundamental studies of quantum optics and promising applications in optoelec- tronics and quantum information [1 – 3], as ...
5
Quantum Wells to Improve the Performance of III/V Multi-junction Solar Cells.
... periodic quantum wells with minimal stress ...of quantum wells that can be included in any GaN n-i-p ...is InGaAs/GaAs grown in the i layer of GaAs p-i-n structure to tune the bandgap of GaAs-based ...
170
On demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability
... self-assembled InGaAs quantum dots as single quantum emitters which can have near-unity quantum efficiencies [29]—a prerequisite for the criteria B—and near-transform-limited emission ...
13
A Theoretical Evaluation of Spectral Function of Mutual Coupling of Two Semiconductor Quantum Dots via an Optical Nanocavity
... self-assembled InGaAs quantum dots strongly coupled to a single optical nanocavity ...two quantum dots exhibit markedly different DC Stark ...
10
Exciton Dynamics in Stacked InGaAs/GaAs Quantum Rings Under Resonant Excitation
... stacked InGaAs quantum ring layers, separated by thin GaAs barriers, by means of steady state photoluminescence under very low excita- tion density and resonant excitation ...
5
Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs ...
9
Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... Temperature-dependent (3–300 K) PR spectroscopy was used to study optical transitions within dots-in-a-well photo- detector structures. Cumulative analysis of PR, phototrans- mittance, and contactless-electroreflectance ...
7
Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
6
Exciton fine-structure splitting of telecom-wavelength single quantum dots: Statistics and external strain tuning
... In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1µm < λ < 1.3 µm) InGaAs quantum dots as a function of external uniaxial ...
16
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... the InGaAs, which causes photo- ...of InGaAs quantum dots is characterized by the presence of some defect levels with different energies and fluctuations of the energy band edge potential in the GaAs ...
7
Optical properties of as grown and annealed InAs quantum dots on InGaAs cross hatch patterns
... Self-assembled InGaAs quantum dots (QDs) have been intensively investigated during the last decade due to their high crystalline quality ...[1]. InGaAs QDs conven- tionally grown on on-axis ...
7
Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
... the isotope spin 共 hyperfine constant 兲 . A simplified approximation commonly employed in the literature is to define the degree of nuclear polarization on the dot as the ratio of the observed Over- hauser shift to E OH ...
5
Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... of InGaAs/InP QW lasers is smaller than that of InGaNAs/GaAs QW lasers, but the values are much larger for the InGaNAs system as shown in ...for InGaAs resulting in a higher modulation current efficiency ...
9