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quantum well structures

A THEORETICAL STUDY OF TRIPLE QUANTUM WELL STRUCTURES UNDER EXTERNAL FIELDS

A THEORETICAL STUDY OF TRIPLE QUANTUM WELL STRUCTURES UNDER EXTERNAL FIELDS

... Abstract: Using theoretical formalism of A. Large etal [Semicond. Sci. Technol. 2002], we have studied the shallow donor impurity in triple quantum well structures. We have used the effective mass ...

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Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field

Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field

... Finally, the terahertz transitions between Landau levels of different subbands in resonant tunneling quantum well structures in a tilted magnetic field were considered. An effective way was proposed ...

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Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness

Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness

... asymmetric quantum well structures designed to access spatially indirect (diagonal) interwell transitions between heavy-hole ground states, at photon energies below the optical phonon ...different ...

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Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

... GaN/AlGaN quantum well structures are considered with regard to their potential application in optoelectronic devices working at communication ...strain-balanced structures are presented in ...

5

Dilute magnetic semiconductor quantum-well structures for 
magnetic field tunable far-infrared/terahertz absorption

Dilute magnetic semiconductor quantum-well structures for magnetic field tunable far-infrared/terahertz absorption

... pare quantum-well structures based upon these materials, op- erating as photodetectors, against bolometers, the latter has a very high responsivity at a few kelvin and does not require an external ...

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Tunable Multi-Channel Filtering Using 1-D Photonic Quantum Well Structures

Tunable Multi-Channel Filtering Using 1-D Photonic Quantum Well Structures

... Abstract—In the present study, we show that it is possible to achieve multi-channel filters in one-dimensional photonic crystals using photonic quantum well structures. The photonic quantum ...

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Investigation of narrow band semiconductor quantum well structures using a synchronously pumped optical parametric oscillator

Investigation of narrow band semiconductor quantum well structures using a synchronously pumped optical parametric oscillator

... As for the room temperature data, the large difference in electron spin life- time between these two systems may possibly be understood using the original explanation given in Guettler et al.[38]. The quantum ...

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Engineering the exciton linewidth in II VI quantum well structures

Engineering the exciton linewidth in II VI quantum well structures

... or 2-D binding energy is four times greater than the bulk or 3-D case.3 In forming real quantum well materials, we wish to choose structures such that the binding energy is substantially[r] ...

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Theoretical studies of wavepacket propagation in semiconductor quantum well structures

Theoretical studies of wavepacket propagation in semiconductor quantum well structures

... For double barrier systems containing one resonance the behaviour of the resonant current can be predicted using a model transmission coefficient which contains the main features of a re[r] ...

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Effect of triplet multiple quantum well structures on the performance of blue phosphorescent organic light emitting diodes

Effect of triplet multiple quantum well structures on the performance of blue phosphorescent organic light emitting diodes

... exciton confinement inside recombination zones by using a triplet multiple quantum structure. The triplet energies of mCP and TPBi are higher than those of FIr- pic. Therefore, triplet multiple quantum ...

5

Circular and linear photogalvanic effects in type II GaSb/InAs quantum well structures in the inverted regime

Circular and linear photogalvanic effects in type II GaSb/InAs quantum well structures in the inverted regime

... Fig. 4. The similar behaviour is also observed for the transverse and longitudi- nal photocurrents induced by linearly polarized radiation, see Fig. 3 showing the dependence of the transverse photocurrent on the angle of ...

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Magnetotransport study on as grown and annealed n  and p type modulation doped GaInNAs/GaAs strained quantum well structures

Magnetotransport study on as grown and annealed n and p type modulation doped GaInNAs/GaAs strained quantum well structures

... latory magnetoresistivity, zero-field resistivity, Fermi en- ergy, first subband energy, cyclotron frequency, effective mass, quantum lifetime of 2D carriers, and carrier mo- bility, respectively. The i represents ...

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Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures

Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures

... semi-polar structures, a blue- emitting multiple quantum well structure, and an amber-emitting light-emitting ...the quantum wells (QWs) in this ...

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A study of photomodulated reflectance on staircase like, n doped GaAs/Alx
              Ga1−xAs quantum well structures

A study of photomodulated reflectance on staircase like, n doped GaAs/Alx Ga1−xAs quantum well structures

... In this work, photomodulated reflectance (PR) and photoluminescence (PL) experiments were carried out on two different staircase-like QWIP structures at room temperature. PR is a powerful characterization method ...

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Magnetotransport phenomena in modulation doped n-channel Si/Si0.7Ge0.3 quantum well structures

Magnetotransport phenomena in modulation doped n-channel Si/Si0.7Ge0.3 quantum well structures

... possible choice in te rm s of high-speed perform ance, th ey are not well suited w hen combined w ith n-channel FETs employing a p u re Si ch an n el for CMOS. For th is reason m ost resea rch on p-channel M ...

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Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

... cathodoluminescence (CL) hyperspectral imaging to study InGaN/GaN multiple quantum well (MQW) structures. Different types of trench defects with varying trench width, namely wide or narrow trenches ...

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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization

MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization

... of each diode suggest that strain relaxation and a loss of quantum con fi nement have occurred in the diodes with more than 40 QWs. The GaAsBi/GaAs MQWs appear to relax at a similar average strain – thickness ...

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Transport properties of modulation-doped Si/SiGe quantum well structures

Transport properties of modulation-doped Si/SiGe quantum well structures

... entary quantum m echanical description of the m odulation- doped n- and p-type ...as well as the exponential envelop function of the ...corresponding structures can be analyzed. In n-type ...

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Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

... causes a large redshift of the band gap; therefore, in- corporation of N into the III-V lattice brings more flexibility to tailor the band gap of the material [5]. However, the optical quality of dilute nitrides is ...

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Electronic and Photonic Band Engineering for Novel Optoelectronic and Nanophotonic Devices

Electronic and Photonic Band Engineering for Novel Optoelectronic and Nanophotonic Devices

... based quantum-well structures are calculated based on the Rashba-Sheka-Pikus (RSP) Hamiltonian in the vicinity of the Γ point since the simple parabolic model is very poor to fit the valence band ...

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