Quantum Wells
Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields
... Finally, we mention that surface roughness, in combination with B , was proposed [44] to explain anisotropies near level crossings [21,22]. However, such a scenario is not applicable here since our 2DHG is a single-band ...
6
Optimization of electron Raman scattering in double rectangular quantum wells
... as: quantum wells, quantum dots, sup- perlattices and quantum wires, which are usually made with epitaxially grown materials (for instance ...double quantum well systems; because many ...
8
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of ...
7
The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells
... In contrast with the large system, the envelope function approach was shown to be less effective in describing the electronic properties of ‘‘small systems’’ such as narrow quantum wells, or short period ...
9
The effects of linear and non-linear diffusion on exciton energies in quantum wells
... determine the linear diffusion coefficient D. Once D has been determined the relationship could then be utilized as a predictive tool, e.g., to determine the annealing time necessary to produce a given energy shift for a ...
6
Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field
... based quantum wells and self-assembled quantum wires is investigated theoretically and experimentally through the study of the exciton diamagnetic ...for quantum wires and quantum ...
9
Stability of trions in coupled quantum wells modeled by two dimensional bilayers
... Appropriate model parameters for the GaAs/AlGaAs coupled quantum-well device studied by Butov et al. 6 were identified in Ref. 33. In particular the layer separa- tion d was chosen such that the exciton binding ...
7
Quantum Wells to Improve the Performance of III/V Multi-junction Solar Cells.
... of quantum wells on substrates with 2° 111B and 6° 111A offcuts have been analyzed using XRD, time resolved photoluminescence (TRPL) and photoluminescence ...
170
Terahertz quantum Hall effect for spin split heavy hole gases in strained Ge quantum wells
... Ge quantum wells ( sGe- QWs) are attractive systems for spintronics due to their compatibility with CMOS technology and finite SO effects, driven by the Rashba SOI ...the quantum Hall effect ( QHE ) [ ...
10
Second harmonic generation at the quantum-interference induced transparency in semiconductor quantum wells: The influence of permanent dipole moments
... Abstract—The influence of permanent dipole moments of quan- tized states on intersubband second harmonic generation based on quantum-interference induced transparency in semiconductor quantum wells ...
5
Stark Effect in P-Type Delta-Doped Quantum Wells
... Abstract—In this work tight binding calculations in Be δ-doped GaAs quantum wells with an electric field applied along the [001] growth direction are presented. The Stark shifts of the hole electronic states ...
8
Rashba spin splitting and terahertz quantum Hall effect for heavy holes in strained germanium quantum wells
... This thesis presents a thorough characterisation - by means of THz-TD magneto-spectroscopy (THz-TDMS) and polarisation resolved (PR)-THz-TDMS - of high mobility 2DHGs in 0.8% and 1.3% compressively strained germanium ...
153
Spin relaxation and carrier recombination in GaInNAs multiple quantum wells
... Spin relaxation in semiconductors, i.e. the mechanisms by which the electron- or hole-spin flips from an ’up’ to a ’down’ state or vice versa (detailed in chapter 2), is an interesting topic as it delves into the physics ...
134
Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... 16. Lombez L, Lagarde D, Renucci P, Amand T, Marie X, Liu BL, Wang WX, Xue QK, Chen DM: Optical spin orientation in (110) GaAs quantum wells at room temperature. Phys Status Solidic 2007, 4:475, Ohno Y, ...
7
Aperiodic Fibonacci Series Multiple Quantum Wells Lead to Topological Quantum Computation
... multiple quantum wells structures ...exotic quantum phases of matter that host quasiparticles with non-Abelian anyons partially due to the possibility of topological quantum computation ...
9
“Smart Design” of Quantum Wells and Double Quantum Wells Structures
... (quantum wells and superlattices) based on the combination of Inverse Scattering Problem Method and the direct solution of the eigenvalue prob- lem for the Schrödinger equation with reconstructed ...
9
Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells
... Recently, studies of the internal transition of shallow im- purities fresh impetus due to the potential applications in far-infrared detectors and a solid state terahertz laser. 1–5 Con- finement of such impurities in ...
5
Intersubband terahertz lasers using four-level asymmetric quantum wells
... The methods we use are described in more detail in an earlier paper, 5 but for convenience we include a brief sum- mary here. The energy levels and wave functions of the quantum wells were obtained by ...
7
Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
... One important question is whether the surface roughness can also result in huge anisotropy in our Ge quantum wells in tilted B . First, B -induced anisotropy is known to be temperature independent [7,9], ...
6
Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... The electron distribution due to an in-plane electric field in a multisubband system may be found by solving the Bolt- zmann equation with all intra- and intersubband scattering processes taken into account. In this ...
7