Si/Si/sub 1-x/Ge/sub x/ structure
RETRACTED ARTICLE: Enhanced Emission of Quantum System in Si Ge Nanolayer Structure
... of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our ...of Si-Ge ...
6
Si1 x Ge x /Si interface profiles measured to sub nanometer precision using uleSIMS energy sequencing
... With the advancement of growth technologies such as chemical vapour deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) etc., devices are now routinely composed of ...
30
Extra Electron Diffraction Spots Caused by Fine Precipitates Formed at the Early Stage of Aging in Al Mg X (X=Si, Ge, Zn) Cu Alloys
... ing AlMgZnCu, AlMgSiCu and AlMgGeCu alloys. In addi- tion, AlMgZn42 and AlMgZnCu42 alloys were prepared to compare the difference Zn-to-Mg ratios with AlMgZn and AlMgZnCu alloys. Titanium was included in the AlMgZn and ...
9
Quantum Mechanical Properties of a Nano-Scale p-n Junction Based on Si/Si0.4Ge0.6/Si Quantum Well
... well structure having width of 100 Å as compared to its 10 Å counterpart for all applied reverse bias ...the Si/Si 0.4 Ge 0.6 /Si quantum well ...
5
Formation of Metal Silicide and Metal Germanosilicide Contacts to Si[subscript 1-x]subscript Ge[subscript x] Alloys
... device structure, whose exposed polysilicon gate and doped source/drain regions have been made contamination free, Ti is deposited and is allowed to react in a nitrogen ambient, forming a C49 metal ...
128
Ab Initio Study of Binary and Ternary Nb₃(X,Y) A15 Intermetallic Phases (X,Y = Al, Ge, Si, Sn)
... underconverged structure could yield imaginary phonon frequency eigenvalues, which is indicative of mechanical ...− 1 , the results were interpolated onto a very dense q-point set, thus the phonon density ...
27
A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low Energy Irradiation
... of Si/Ge SL containing mono- layer of pure Ge, and enhanced radiation resistance of the SL structure was found as compared with bulk silicon ...the Si/Ge SL with embedded ...
11
Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes
... electronic structure are quantitatively different for the O and S ...As, Ge, Si, O, and S atoms include the core levels and the respective valence bonding states, 4s and 4p for As and Ge, 3s ...
10
Growth and characterisation of terrace graded virtual substrates with Si[subscript 1 x]Ge[subscript x] 0 15 ≤ x ≤ 1
... Such an increase in threading density with terminating composition has also been found by Leitz et al. (2001) even though theoretically such a rise was not expected. It is concluded that the increase with increasing ...
233
Reactivity of Au/La<sub>1 x</sub>Sr<sub>x</sub>Cr<sub>1 y</sub>Ni<sub>y</sub>O<sub>3 δ</sub> toward Oxidative Coupling of Methane for C<sub>2</sub> and C<sub>3</sub> Hydrocarbons Production
... main structure unchanged; hence perovskite material has the possibility to improve the properties by partial substitution of cations and can be used at high temperature ...
12
Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ
... fluorescent X-rays or the emitted electrons due to X-ray absorption are detected respectively to calculate the µ(E) ...fluorescence X-rays and Auger electrons are caused by the decay of the core hole ...
152
Study of Si1-xGex Junction Formation for SOI Based CMOS Technology
... I am sincerely grateful to my advisor Dr. Veena Misra for her help and sup- port during my doctoral research work at NC State University. Dr. Misra provids insights into many aspects of my research on strain engineering. ...
119
A first principles study of sub-monolayer Ge on Si(001)
... of Ge grows on a (2 × n) surface, and does not fill in the trenches in the ...On Si (001), there are two step types: parallel to the dimer rows (A-type, generally smooth) and perpendicular to the dimer rows ...
13
The durability of Mn–Mo–Sn–W–Sb–O/Ir<sub>1–x–y</sub>Sn<sub>x</sub>Sb<sub>y</sub>O<sub>2+0.5y</sub> /Ti oxygen evolution anode for hydrogen production from seawater electrolysis
... room temperature. The ohmic drop was corrected using a current interruption method. The potential written in this paper hereafter is the overpotential and relative to Ag/AgCl reference electrode with saturated KCl ...
6
Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3
... by X-ray diffraction ...and X-ray measurements was achieved in all ...by X-ray diffraction spectrometry are used in preference here since CV analysis is rather insensitive to small changes in device ...
7
Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor
... fraksi mol dari 8% menjadi 24% untuk konsentrasi doping yang sama dapat meningkatkan bandgap narrowing sebesar 0.11. Perubahan konsentrasi doping dari NB = 5 x 10 18 cm -3 menjadi NB = 5 x 10 20 cm -3 ...
6
Decreased bacteria activity on Si<sub>3</sub>N<sub>4</sub> surfaces compared with PEEK or titanium
... grain structure on the as-fired surface of Si 3 N 4 is composed of randomly oriented columnar grains that are typically 200–700 nm in diameter, and that can protrude above the surface up to about 3 µ ...
12
Down-top nanofabrication of binary (CdO)<sub>x</sub> <br />(ZnO)<sub>1-x</sub> nanoparticles and their antibacterial activity
... (CdO) x (ZnO) 1–x NPs samples. The sample was characterized by X-ray diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray (EDX), transmission electron microscopy ...
15
Characterization of Quaternary Chalcogenide As-Ge-Te-Si Thin Films
... 30 Ge 10 Te 60-x Si x alloys, are given in Table 2, which reveal that the addition of Si leads to a change in the considered ...in Si leads to increase in Eg,th and ...the ...
9
Sub-barrier fusion of Si+Si systems
... nuclear structure strongly influences fusion reaction dynamics at energies near and below the Coulomb ...changing structure from spherical to strongly deformed nuclei, as in 16 O + 148,154 Sm [4, ...
5