Si/Si/sub 1-x/Ge/sub x/ system
RETRACTED ARTICLE: Enhanced Emission of Quantum System in Si Ge Nanolayer Structure
... Fig. 1, the silicon wafers of P-type substrate with 10 Ω cm were taken on the sample stage in the fabrication system with pulsed laser depositing (PLD) devices, in which the left picture depicts the PLD ...
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A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low Energy Irradiation
... of Si/Ge SL containing mono- layer of pure Ge, and enhanced radiation resistance of the SL structure was found as compared with bulk silicon ...the Si/Ge SL with embedded Ge ...
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Computer Simulation of Precipitation Process in Si/Ge Amorphous Multi Layer Films: Effects of Cu Addition
... amorphous Si / Ge multi-layer fi lm, with and without Cu addition, by a molecular dynamics ...study: Si / Ge layers, Si / (Ge + Cu) layers, (Si + Cu) / (Ge + Cu) ...
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Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ
... confocal system from a confocal ...confocal system provides a larger level of light dispersion, hence a higher spectral resolution can be ...Raman System in the department of Electronic Material ...
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Formation of Metal Silicide and Metal Germanosilicide Contacts to Si[subscript 1-x]subscript Ge[subscript x] Alloys
... could be directly formed as the first silicide phase when the Ti diffusion barrier is employed, suggesting that somehow the presence of the diffusion barrier alone would allow the system to bypass the formation of ...
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Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes
... As, Ge, Si, O, and S atoms include the core levels and the respective valence bonding states, 4s and 4p for As and Ge, 3s and 3p for Si and S, and 2s and 2p for ...larger Si, S, As, and ...
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Characterization of Quaternary Chalcogenide As-Ge-Te-Si Thin Films
... It can be seen from table (3) that silicon has a better chance of sticking to the growing film at elevated temperatures as it can form strong bonds with tellurium, the major constituent. However, the As-Te bonds are ...
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Ab Initio Study of Binary and Ternary Nb₃(X,Y) A15 Intermetallic Phases (X,Y = Al, Ge, Si, Sn)
... every system was in the ground state, ...− 1 , the results were interpolated onto a very dense q-point set, thus the phonon density of states (DOS) was obtained for each phase under ...
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A first principles study of sub-monolayer Ge on Si(001)
... of Ge grows on a (2 × n) surface, and does not fill in the trenches in the ...On Si (001), there are two step types: parallel to the dimer rows (A-type, generally smooth) and perpendicular to the dimer rows ...
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Si1 x Ge x /Si interface profiles measured to sub nanometer precision using uleSIMS energy sequencing
... AFM system with a Nanoscope 3A ...the Si 0.73 Ge 0.27 / Si interface was done using a spherical aberration corrected JEOL 2100F microscope, also operating at 200 ...
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Growth and characterisation of terrace graded virtual substrates with Si[subscript 1 x]Ge[subscript x] 0 15 ≤ x ≤ 1
... monitoring system (EIES) utilised on the V90S SS-MBE growth system monitors the requested flux rate from the electron beam evaporators, providing a signal that is used in a control loop to compensate for ...
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Study of Si1-xGex Junction Formation for SOI Based CMOS Technology
... the Si-Si shift of epitaxial film on 40nm silicon nanowire is at the right of the Si-Si shift of epitaxial film on 20nm silicon nanowire for both deposition conditions A and ...the ...
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Reactivity of Au/La<sub>1 x</sub>Sr<sub>x</sub>Cr<sub>1 y</sub>Ni<sub>y</sub>O<sub>3 δ</sub> toward Oxidative Coupling of Methane for C<sub>2</sub> and C<sub>3</sub> Hydrocarbons Production
... A schematic diagram of the experimental system of OCM is shown in Fig. 1. This system was constructed with three main sections i.e., supplied gases, reaction zone, and analysis section. The supplied ...
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Surface phonons of the Si(111):In (4 x 1) and (8 x 2) phases
... macro-Raman system attached to a UHV chamber, can lead to shifts in the energy axis 共the errors are larger than those of a dedicated micro-Raman spectrometer 兲 ...
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Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3
... a Si–SiGe MQW APD because of the localization of the ionization process by the heterostructure interfaces and the associated reduction in multiplication ...
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Extra Electron Diffraction Spots Caused by Fine Precipitates Formed at the Early Stage of Aging in Al Mg X (X=Si, Ge, Zn) Cu Alloys
... ing AlMgZnCu, AlMgSiCu and AlMgGeCu alloys. In addi- tion, AlMgZn42 and AlMgZnCu42 alloys were prepared to compare the difference Zn-to-Mg ratios with AlMgZn and AlMgZnCu alloys. Titanium was included in the AlMgZn and ...
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Reflectance anisotropy spectroscopy of Si(111) (3 x 1)Li and Ag surfaces
... × 1)Li system shows that the shape of the spectrum in this energy range is sensitively dependent on the onset energies for optical transitions relative to the surface state transition ...
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Progressing intention progression: a call for a Goal Plan Tree contest
... A key problem for an agent with multiple, possibly in- consistent, goals is: ‘what should I do next’ ? What to do next can be formalized as the intention progression prob- lem (IPP): what means (i.e., plan) to use to ...
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The durability of Mn–Mo–Sn–W–Sb–O/Ir<sub>1–x–y</sub>Sn<sub>x</sub>Sb<sub>y</sub>O<sub>2+0.5y</sub> /Ti oxygen evolution anode for hydrogen production from seawater electrolysis
... The oxygen evolution efficiency of the electrodeposited anode was measured by electrolysis at a constant current density of 1000 A.m -2 in 0.5 M NaCl solution of pH 1 until the amount of charges of 300 coulombs ...
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CARRIER TRANSPORT MECHANISM OF CdSexS1-x/Si HETEROJUNCTION
... diodes of different x values. There are two regions can be recognized in this figure. The ideality factor can be determined from the slope of linear dependence of the first region of log (I) on the forward bias ...
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