single photon avalanche diode
Electrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode
... dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) ...
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1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature
... InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and ...and photon count measurements were carried out on the devices from 260 to 290 ...of avalanche breakdown in ...
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Ge on Si single photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
... in single-photon detection efficiency (SPDE) at infrared wavelengths in a SPAD utilizing a strained SiGe/Si multiple quantum well (MQW) absorbing layer, but the neces- sarily low fraction of Ge and narrow ...
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Ge-on-Si Single-Photon Avalanche Diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
... in single-photon detection efficiency (SPDE) at infrared wavelengths in a SPAD utilizing a strained SiGe/Si multiple quantum well (MQW) absorbing layer, but the neces- sarily low fraction of Ge and narrow ...
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Performance evaluation of the next generation solid-state digital photon counting PET/CT system
... APD: Avalanche photodiode; cPET: Conventional PMT-based PET/CT; CQIE: Center for Quantitative Imaging Excellence; DCR: Dark count rate; DOI: Depth-of-interaction; DPC: Digital photon counting; dPET: DPC ...
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PROTON IRRADIATION EFFECTS ON SINGLE-PHOTON AVALANCHE DIODES
... Abstract. In this paper, we investigated the discrete switching of the Dark Count Rate between two or more levels in Single-Photon Avalanche Diode devices. This phenomenon, known as Random ...
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Single-photon electroluminescence for on-chip quantum networks
... FIG. 1. (a) Device schematic. (Only one of the three waveguides is shown.) Red and blue colours represent biased and unbiased regions of the sample, respec- tively, separated by a notch which breaks the electrical ...
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A PSpice Circuit Model for Single Photon Avalanche Diodes
... DOI: 10.4236/opj.2017.78B001 2 Optics and Photonics Journal haviors. A basic SPAD model is proposed in [8], which consists of a breakdown voltage source, a fixed diode resistance, a n-MOS switch and two fixed ...
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The development and optimization of potential germanium on silicon single photon avalanche diodes
... As mentioned above afterpulsing is one of the main causes for dark counts. This phenomenon limits how often a single photon can be detected. Dislocations, defects, and interfaces which may be present in a ...
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High Performance Structure of Guard Ring in Avalanche Diode for Single Photon Detection
... sub-pressure principle, which added some bias voltage to the edge of the floating guard ring, so the electric field in the edge region was less than that of the center of the active area. Finally, Leitner and Hendersonin ...
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Development of a simulation environment for the analysis and the optimal design of fluorescence detectors based on single photon avalanche diodes
... To validate the system’s capabilities to model different measurement tech- niques, we simulated the fluorescence decay measurements described in [15]. CdSe/ZnS quantum dots in toluene [71] in a glass capillary were put ...
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Purification of a single-photon nonlinguarity
... of single-photon nonlinearities is the modification of the photon statistics of a quasi-resonant weak coherent input beam 6 : the transmitted photon statistics can become antibunched due to the ...
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... of diode uncontrolled rectifiers with reduced weight and volume provided by switched converters, which operate at high switching This way, the nominal rating of the hybrid structure can be drastically improved ...
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Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy
... Wide bandgap photodetectors may play a very important role in aerospace and military applications; since they present lower leakage currents [1, 2] than alternative narrower bandgap materials, such as silicon or ...
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Single Photon Interaction with Beam Splitters
... In 1986, Grangier, G. Roger, and A. Aspect, [1] published an important experi- mental result concerning the creation of interference using only one photon at a time. In this study, photons were directed to a ...
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Telecommunication Wavelength Band Single Photon Emission from Single Large InAs Quantum Dots Nucleated on Low Density Seed Quantum Dots
... reducing layer (SRL) [20] was grown immediately to maintain QD height for longer-wavelength QD emis- sion [23, 24]. The high substrate temperature and low growth rate of seed QDs increase the migration of in- dium atoms ...
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Suppression of residual amplitude modulation appeared in commercial electro-optic modulator to improve iodine-frequency-stabilized laser diode using frequency modulation spectroscopy
... The LD frequency stabilization system with RAM suppression is shown in Fig. 4. In this system, an ECLD (TLM7000, New Focus) with an optical power of 2 mW and a linewidth of 300 kHz is employed as the laser source. The ...
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Understanding the behavior of 1200 V SiC MOSFET under Short Circuit and Avalanche operation and Behavior of 1200 V SiC JBS Diode under Avalanche operation
... of Avalanche phenomenon is identical to the MOSFETs analysis as presented in the section ...The avalanche energy characterization of the Diodes is impor- tant for many ...in Avalanche capability of ...
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Experimental demonstration of generalised space shift keying for visible light communication
... the natural differences between the channel gain values of different links. This is the key concept of GSSK. It is shown that the channel gains can be quite unique from LEDs to the same receiver or from one LED to ...
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Performance and reliability review of 650V and 900V silicon and SiC devices : MOSFETs, cascode JFETs and IGBTs
... Fig. 9(a) shows the measured turn-OFF transients of all the body diodes. Since these measurements are performed using the same technology for high and low side device, the turn- OFF dI/dt imposed on the diodes are ...
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