Single-Photon Avalanche Diode (SPAD)
Electrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode
... dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) ...
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1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature
... InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and ...and photon count measurements were carried out on the devices from 260 to 290 ...of avalanche breakdown in ...
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Ge on Si single photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
... some single-photon ...infrared single-photon ...on single-photon detectors efficient at the low-loss optical fiber wavelength regions (1310 and 1550 nm) and operational at or ...
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Ge-on-Si Single-Photon Avalanche Diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
... in single-photon detection efficiency (SPDE) at infrared wavelengths in a SPAD utilizing a strained SiGe/Si multiple quantum well (MQW) absorbing layer, but the neces- sarily low fraction of Ge and narrow ...
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PROTON IRRADIATION EFFECTS ON SINGLE-PHOTON AVALANCHE DIODES
... Abstract. In this paper, we investigated the discrete switching of the Dark Count Rate between two or more levels in Single-Photon Avalanche Diode devices. This phenomenon, known as Random ...
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Performance evaluation of the next generation solid-state digital photon counting PET/CT system
... use single photon avalanche diode (SPAD) arrays to detect single scintillation photons, while the pulses generated by multiple SPADs are combined into one analog output signal requiring ...
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A PSpice Circuit Model for Single Photon Avalanche Diodes
... DOI: 10.4236/opj.2017.78B001 2 Optics and Photonics Journal haviors. A basic SPAD model is proposed in [8], which consists of a breakdown voltage source, a fixed diode resistance, a n-MOS switch and two fixed ...
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The development and optimization of potential germanium on silicon single photon avalanche diodes
... This section looks at the new pipin structured SPAD, and provides detailed structural characterization for the layers. The design, shown in Figure 4.28, follows the separate absorption and multiplication layout, seen in ...
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Single-photon electroluminescence for on-chip quantum networks
... FIG. 1. (a) Device schematic. (Only one of the three waveguides is shown.) Red and blue colours represent biased and unbiased regions of the sample, respec- tively, separated by a notch which breaks the electrical ...
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High Performance Structure of Guard Ring in Avalanche Diode for Single Photon Detection
... multichannel photon-counting mod- ules, thus making SPAD devices become a robust and competitive technology to detect single photon like confocal microscopy, biological essays, particle detec- tion, ...
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Development of a simulation environment for the analysis and the optimal design of fluorescence detectors based on single photon avalanche diodes
... To validate the system’s capabilities to model different measurement tech- niques, we simulated the fluorescence decay measurements described in [15]. CdSe/ZnS quantum dots in toluene [71] in a glass capillary were put ...
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Temperature dependence of impact ionization in InAs
... noise. Avalanche Photodiodes (APDs) are often the detectors of choice when they are designed to provide internal gains through impact ionization in the semiconductors without adding significant ...
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Experimental demonstration of generalised space shift keying for visible light communication
... There are four sets of measurements. The first experiment measures the channel gain between 4 selected LEDs and 2 receivers at different positions. The result shows how each channel gain differs from the others. The ...
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Performance and reliability review of 650V and 900V silicon and SiC devices : MOSFETs, cascode JFETs and IGBTs
... Abstract— The future of power conversion at low-to- medium voltages (around 650V) poses a very interesting debate. At low voltages (below 100V), the silicon MOSFET reigns supreme and at the higher end of the automotive ...
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Understanding the behavior of 1200 V SiC MOSFET under Short Circuit and Avalanche operation and Behavior of 1200 V SiC JBS Diode under Avalanche operation
... SiC Power devices are getting more practical and sufficiently available after years of research on device physics and manufacturing technology. Though there are some research on the SiC devices reliability issues but ...
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Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy
... Wide bandgap photodetectors may play a very important role in aerospace and military applications; since they present lower leakage currents [1, 2] than alternative narrower bandgap materials, such as silicon or ...
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Using optical eigenmodes for single photon description
... Conclusion • Introduce the basics of optical eigenmode decomposition • Optical eigenmodes can be used as a natural representation of the electromagnetic fields • Hypothesized that at sin[r] ...
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Suppression of residual amplitude modulation appeared in commercial electro-optic modulator to improve iodine-frequency-stabilized laser diode using frequency modulation spectroscopy
... The LD frequency stabilization system with RAM suppression is shown in Fig. 4. In this system, an ECLD (TLM7000, New Focus) with an optical power of 2 mW and a linewidth of 300 kHz is employed as the laser source. The ...
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Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator
... an avalanche diode and a QCL, with the avalanche section providing a negative conductance, that under certain bias conditions triggers microwave oscillations that modulate the THz emission of the ...
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Coherence and path indistinguishability for the interference of multiple single-mode fields
... N single-mode fields when we consider the detection of a single photon only we see that the degree of coherence is exactly equal to the modulus of degree of indis- tinguishability when we consider ...
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