[PDF] Top 20 Electron transport in n-doped Si/SiGe quantum cascade structures
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Electron transport in n-doped Si/SiGe quantum cascade structures
... considered electron transport in n-Si/ SiGe cas- cade or superlattice structures, using the rate equations ap- proach and tight-binding expansion, taking the coupling with two ... See full document
7
n-Si/SiGe quantum cascade structures for THz emission
... THz quantum cascade lasers, Si/SiGe quantum cascade structures are attracting considerable attention as a very promising technology for the same ...the ... See full document
15
Simulated effect of epitaxial growth variations on THz emission and gain of SiGe/Ge quantum cascade structures
... and SiGe alloys on Si substrates [1]. Quantum Cascade Lasers (QCLs) are suitable for efficient generation of radiation at terahertz ...200K. Si has a higher thermal conductivity than ... See full document
5
Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures
... simple cascade, and so their contribution to hole-hole scattering is ...complex structures generally provides a similar level of accuracy as in simple ...in structures which have more than two ... See full document
10
Magnetotransport phenomena in modulation doped n-channel Si/Si0.7Ge0.3 quantum well structures
... ensional electron gas in a q u an tu m well, a conduction ban d offset betw een th e Si channel and th e su rrounding ...show n in figure ...thick Si buffer layer onto a high resistivity ... See full document
190
Temperature Dependent High Speed Dynamics of Terahertz Quantum Cascade Lasers
... electronic structures, optical and transport properties, optimization and de- sign of quantum wells, superlattices, quantum-cascade lasers, and quantum-well infrared ... See full document
9
Electron Subband Structure and Mobility Trends in P-n Delta-Doped Quantum Wells in Si
... Delta-doped quantum wells in Si are ideal structures to study the transport properties of ultra dense two dimensional electron gases (2DEG) [9, 10] Important parameters are the ... See full document
7
Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P i n Infrared Photodetectors for 1 3 1 55 μm Optical Communication
... coefficients are calculated using the transfer matrix me- thod all over the length of the structure. The results are demonstrated in Figure 4 where the transmission coeffi- cient is plotted. (a) Transmission coefficient ... See full document
16
Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness
... asymmetric quantum wells (CAQWs) in this size ...QC structures [6] were obtained indirectly from electroluminescence measure- ...the structures are specifically designed so that between these two ... See full document
9
Infinite-period density-matrix model for terahertz-frequency quantum cascade lasers
... with structures where intraperiod resonant tunneling cannot be ne- glected or structures where the nearest neighbor approximation for the period transport is ... See full document
10
A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices
... of quantum cascade lasers (QCLs) for use as a design tool, to interpret experimental results and hence improve un- derstanding of the physical processes occurring inside working devices and as a simulator ... See full document
9
Theory and design of quantum cascade lasers in (111) n -type Si/SiGe
... Intervalley electron-phonon scattering was determined only for the Si-Si branch of the deformation potential in- teraction, as the Ge fraction in quantum wells is ... See full document
8
Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures
... the quantum cascade lasers (QCL’s) are fabricated by stacking up alternating layers of semi- conducting material with nanoscale ...band quantum wells in the z direction which trap the electrons into ... See full document
6
Electric field domains in p-Si/SiGe quantum cascade structures
... a cascade structure conducted in [7] involved finding the steady-state solution to the system of time-dependent rate equations upon increasing the bias in small increments, and the initial state of the system was ... See full document
8
Transport properties of modulation-doped Si/SiGe quantum well structures
... ariso n of the ex p erim e n tal re su lts, o n ly the n o n p arab o licity factors of the hole energies at the Ferm i w avevector are of im portance since they correspond to the ... See full document
283
Bottom up Silicon Nanoelectronics
... nanoscale electron transport properties and device ...fabricating Si nanodots we have studied three different ...(nc) Si film with the size of the grains down to a few nanometer. The ... See full document
5
Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
... The Si capping layer grown at a low temperature of 300°C on QDs shows similar surface morphologies [5] with a slight change in shape from dome to mound, as shown in Figure 1a and ...of Si cap- ping layer ... See full document
5
A study of photomodulated reflectance on staircase like, n doped GaAs/Alx Ga1−xAs quantum well structures
... The importance of the photomodulated reflectance spec- troscopy in complicated semiconductor QW structures and hence in QWIPs has been verified by the experi- mental and the theoretical results obtained from this ... See full document
5
Electron Transport and Device Applications of Nanocrystalline Silicon
... the electron wavefunctions over the coupled ...an electron stability diagram for two charging grains ...adjacent Si grains, resulting in bonding- and anti-bonding-like resonance peaks ...a ... See full document
18
The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices
... high-field transport measure- ment data at 300 K on 6H-SiC (see ...the electron scattering time at 7 K com- pared to its value at 300 K and a corresponding decrease of the threshold field of the BO regime are ... See full document
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