[PDF] Top 20 Substrate emitting ring interband cascade lasers
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Substrate emitting ring interband cascade lasers
... the ring-shaped ...the ring ICL is 104 mW/A at 20 C, which corresponds to an external differential quantum effi- ciency of ...15-stage interband cascade VCSEL 14 with 60/40 lm mesa/ aperture ... See full document
5
Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode locked interband cascade lasers
... structures emitting around 4 µm have been realized and ...locked interband cascade lasers and opens a pathway for practical realization of a dual comb spectrometer operating in the ... See full document
5
Monolithic single mode interband cascade lasers with wide wavelength tunability
... widely-tunable lasers is based on binary superimposed gratings and a two-segment device approach for wavelength ...BSG lasers emitting light at specific wavelengths rather than emitting one or ... See full document
11
10 W pulsed operation of substrate emitting photonic crystal quantum cascade laser with very small divergence
... vertical emitting QCLs [7-9] were limited to pulsed mode operation with output power below 1 ...for substrate emitting quantum cascade lasers (a kind of vertical emitting laser ... See full document
6
Optimizing the active region of interband cascade lasers for passive mode locking
... The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the elec- tronic structure properties of ... See full document
7
Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
... used in the simulations and the results presented in Fig. 4. A constant etch depth of 9 µm is used in Fig. 4(a), and a ridge width of 10 µm used in Fig. 4(b). The results in the Fig. 4(a) agree with experimental ... See full document
8
Single-mode surface-emitting concentric-circular-grating terahertz quantum cascade lasers
... ridge-waveguide lasers where a linear second- order grating is adopted, because the standing wave modes in the ridge cavities are expressed as sinusoidal ...CCG lasers is comparable with that of ... See full document
5
Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid infrared emitting interband cascade lasers
... a substrate temperature of 580 °C under Sb ...The substrate temperature is ramped down by the end of the buffer layer and stabilized in order to ensure a stable substrate temperature of 450 °C during ... See full document
7
Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid Infrared Emitting Interband Cascade Lasers
... formance interband cascade lasers and that additional work on the technological side is necessary to minimize interface diffusion when GaInAsSb layers are ... See full document
7
Investigation of thermal effects in quantum-cascade lasers
... QCL emitting at m up to at least 400 K in pulsed mode has been reported ...mounted substrate side down with no particular attention paid to optimizing the structure to improve the thermal manage- ... See full document
10
Low Power Consumption Substrate Emitting DFB Quantum Cascade Lasers
... The spectra characterization of the lasers is shown in Fig. 3. Both of the 1 and 0.5 mm devices can operate in CW mode without mode hop within a wide temperature range from 15 to 105 °C. This is the highest ... See full document
5
Single mode interband cascade lasers emitting below 2 8 μm
... semiconductor lasers by three different approaches with reasonable performance 6 : diode lasers based on GaSb using type-I interband-transitions with emission from around 2 to ...quantum ... See full document
5
Low divergence single-mode surface-emitting concentric-circular-grating terahertz quantum cascade lasers
... edge- emitting beam tightly (~10°) [10]. For surface-emitting devices, linear second-order DFB grating THz QCLs have been demonstrated to couple the optical power vertically out of a laser cavity ...DFB ... See full document
12
On the modified active region design of interband cascade lasers
... GaSb substrate and designed for shorter wavelength of about 4 lm, but also the second one grown on an InAs substrate, with the emission in the 6–7 lm ... See full document
6
Type II quantum wells with tensile strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
... We have studied type-II W-design AlSb/InAs/GaAsSb/ InAs/AlSb QWs grown on GaSb and InAs substrates, consid- ering the changes in the layers’ thickness, the GaAsSb compo- sition, and hence the related strain (differing ... See full document
6
Monolithic frequency comb platform based on interband cascade lasers and detectors
... The investigated ICLs were grown at the Universität Würzburg and at Nanoplus GmbH and processed at the Center of Micro- and Nanostructures at TU Wien. The simulated bandstructure is shown in Supplement 1, Fig. S6. The ... See full document
6
Design Optimization for 4.1-THZ Quantum Cascade Lasers
... Abstract: We present an optimized design for GaAs/AlGaAs quantum cascade lasers operating at 4.1THz. This was based on a three-well active module with diagonal radiative transition. This was performed by ... See full document
5
Efficient method for transport simulations in quantum cascade lasers
... Abstract. An efficient method for simulating quantum transport in quantum cascade lasers is presented. The calculations are performed within a simple approximation inspired by Büttiker probes and based on a ... See full document
6
Multicore rare earth doped fibres; application to amplifiers, filters and lasers
... and lasers funded under the ROPA scheme and targeted at new devices for WDM ...fibre lasers as well as passive tracking optical filters was ...fibre lasers have been developed as telecommunication ... See full document
7
Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers : a universal analytical estimate and numerical analysis
... As discussed in [12.], the threshold modification by LSHB is absent, and thus , if the gain-carrier density dependences of the gain and (non-stimulated) recombination rate are both linear; however in realistic Quantum ... See full document
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