InAs-dot/GaAs structures
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... of structures with metamorphic InAs QDs have been performed in last years [37 – 39, 43], full aspects of the photoresponse mechanism still remain unclear, as along with the influence of the MB on the ...
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Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot in well structure
... cover InAs/GaAs QDs with a thin InGaAs quantum well (QW) ...on InAs/GaAs QDs can reduce emission energy of QDs by reduction of the residual compressive strain, increment of QD size, and ...
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Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells
... increased by a remarkable 260 mV relative to the reference QD- IBSC. It is important to note that with the exception of the window layer the devices were otherwise identical. To quantify the e ff ect of the window layer ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... low InAs growth rate ...bilayer InAs/ GaAs QD structures emitting above ...bilayer InAs/GaAs QD ...between InAs QD pairs by inserting a thin Al ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... quantum dot lasers have been improved with progress in active layer ...formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior ...
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Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells
... increased by a remarkable 260 mV relative to the reference QD- IBSC. It is important to note that with the exception of the window layer the devices were otherwise identical. To quantify the e ff ect of the window layer ...
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Effects of annealing on performances of 1 3 μm InAs InGaAs GaAs quantum dot electroabsorption modulators
... Note that although the DC extinction ratio of 600A (750A) was reduced to less than 70% (30%) of its original modulation ability, RF measurement on the devices was still possible due to lower propagation loss after ...
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Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
... these structures, according to the Raman selection rules, only longitudinal optical (LO) phonons can be observed in backscattering from the pla- nar surfaces of the SLs while rather sophisticated scat- tering ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... In this communication, we report on a room- temperature study a ten-layer system of tunnel-coupled In(Ga)As/GaAs QD. As shown in [7,8], the structure with ten tunnel-coupled layers of In(Ga)As/GaAs QDs ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...(2D) structures like the quantum well, the superior attributes of the quantum dot has ...
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Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures
... the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer ...arrange InAs dots into chains with a ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... well structures would otherwise be useful for this concept except that the isolation requirement of the intermediate band can only be ideally satisfied by a band with zero-dimensional density of states (Figure ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... In a previous publication [30], we have carried out an in-depth study of a single metamorphic QD structure grown by molecular beam epitaxy (MBE) on semi- insulating (si)-GaAs substrates. We focused on the com- ...
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InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application
... quantum dot laser structures has been dem- onstrated as an effective method to further improve the QD laser performance including the temperature stabil- ity [7] and high-speed modulation characteristics ...
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The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS)
... QD structures will be presented that includes the most prominent fields of QD technology (although many other QD semiconductor applications exist) such as state-of-the-art lasers, light-emitting diodes, detectors, ...
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Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations
... much higher in comparison with quantum wells [1]. De- spite initial doubt regarding non-uniform size of the self- assembled QDs in growth process, as a source of failure in QD lasers, the first successful practical ...
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Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... relaxation scales, ~ms, are much larger compared to photoluminescence relaxation times ~ns [18] due to de- fect states in the GaAs spacers. The presence of defects cannot be excluded for both the InGaAs dots or ...
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Vol 8, No 6 (2019)
... arsenic vapor has the logarithmic regularity. After the fusion had been completed, pulling of crystal with normal crystallization (heat ejection on all sides) has been performed by the Czochralski method. GaAs ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... enhancement factor [3], have been realized through p-doping technique. However, quantum-dots emitting at 1.3 μ m and above have not fulfilled the initial expecta- tion of improved temperature-insensitive modulation ...
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Quantum dot cascade laser
... controllable InAs QDs on tensile-strained InAlAs layers; second, the population inversion is achieved be- tween lower levels of coupled InAs QDs and upper hybrid QW-dominated lasing ...
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