thin-oxide gate dielectrics
Electrical Performance and Stability of ZnO Thin-Film Transistors Incorporating Gadolinium Oxide High-k Dielectrics
... and gate bias stress instability of ZnO-based thin film transistors (ZnO- TFTs) incorporating amorphous gadolinium oxide, a high-k dielectric ...ZnO thin films produced via radio frequency ...
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Structural and electrical characteristics of high κ Er2O3 and Er2TiO5 gate dielectrics for a IGZO thin film transistors
... ically depicted in Figure 5b,c, respectively. Briefly speak- ing, during dc stress, hydroxyl ions (OH – ) are released from the erbium hydroxide (Er-OH) by breaking the Er-OH bonds. The electrons in the oxide have ...
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Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics
... 4 dielectrics typical of current and future-generation commercial gate ...physical oxide thickness, not with the energy stored on the gate ...Alternative dielectrics with equivalent ...
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Solution processed metal oxide dielectrics and semiconductors for thin film transistor applications
... metal- oxide based TFTs exhibit higher electron mobility than amorphous silicon (a-Si) which is currently in use, increasing the performance of the ...metal oxide based dielectric materials in the TFT ...
297
The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
... silicon oxide because its dielectric constant is double that of oxide while demonstrating a conduction band and valence band off-set energies of 2 eV, and a dielectric strength of at least 10 MV/cm ...into ...
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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High Electron Mobility Transistors
... thin films were measured through spectroscopic ellipso- metry (SE, Elli-SE, Ellipso Technology) in the wave- length range 280–980 nm at an incident angle of 70°. The film thickness was confirmed using ...
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Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics
... high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the ...the gate capacitance is independent of the dielectric material for a given equivalent ...
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GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing
... both thin oxide layer and GaN substrate, the determined atomic fractions of each element are not the actual compositions of oxide film until the film grows to the thick film (> 4 ...
174
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing
... where thin surface layers of transparent materials with dif- ferent optical indices of refraction will either enhance or re- duce surface reflectivity, and thereby reduce or enhance, re- spectively, the optical ...
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Fixed Charge Reduction and Tunneling in Stacked Dielectrics
... the gate electrode in a MOS ...positive gate bias, electrons tunneled through the thin silicon dioxide layer and into the hafnium oxide ...hafnium oxide slightly below the conduction ...
102
Low series resistance structures for gate dielectrics with a high leakage current
... Different innovative RF C-V test structures are presented for material re- search. The low series resistance RF C-V structures have been fabricated. Measurements performed on the low resistivity substrate indicate that ...
107
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics
... the gate dielectric is not atomically smooth; hence, carriers scatter against surface asperities in strong inversion ...in oxide thickness, hence carriers transiting along the channel will be perturbed by a ...
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Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.
... The properties of HfSiON on Ge as a function of surface treatment are investigated in this chapter. To investigate the effect of surface passivation treatment on germanium, four types of surface passivation were ...
147
The interfaces of lanthanum oxide based subnanometer EOT gate dielectrics
... metal oxide and substrate silicon ...EOT thin film [1,2]. The metal gate/high-k interface where a low-k transition layer may exist will also affect the resulting EOT; unfortunately, this issue was ...
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Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel
... observed by using H-7100 model, Hitachi, Japan. It is found that the sol-gel process ITO and PZT films were grown dense enough on the Pt bottom gate. The insert of Figure 2(b) shows a larger-scale image at the ...
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esd03.pdf
... In conclusion, we have presented circuits for reducing leakage in a variety of MOS ESD power supply clamps in 0.18µm and 0.13µm processes. The circuits have enabled substantial reduction of leakage without compromising ...
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Manuscript Title & Authors
... Several researches about determining forbidden band width of rare earth oxides have been reported [10-11] . S.A.Chambers et al. suggested that the band gap width of rare earth oxides can be determined by the difference ...
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Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications.
... dielectric stack has been investigated and the leakage characteristics of the Hf-based dielectric stacks after anneal in different ambients through MDMA has been systematically studied. Specifically, in ref. 12, Wu et. ...
247
Hafnium oxide-based dielectrics by atomic layer deposition
... The experimental work in this thesis focusses on potential improvements to hafnium- based dielectric materials; specifically in the context of dielectric layers in metal oxide semiconductor field-effect ...
161
Influence of Plasma Treatment to the Performance of Amorphous IGZO based Flexible Thin Film Transistors
... With the rapid development of AMOLED display technology, AMOLED display technology in compare to AMLCD display technology which exhibit more excellent properties, such as response faster, thinner, color is more brightly ...
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