• No results found

[PDF] Top 20 Resistive phase transition of the superconducting Si(111) (7×3) In surface

Has 10000 "Resistive phase transition of the superconducting Si(111) (7×3) In surface" found on our website. Below are the top 20 most common "Resistive phase transition of the superconducting Si(111) (7×3) In surface".

Resistive phase transition of the superconducting Si(111) (7×3) In surface

Resistive phase transition of the superconducting Si(111) (7×3) In surface

... current is not uniform. To circumvent this problem, in the present study, we adopted a configuration with a linear current path between the voltage terminals (Figure 1d). The black regions represent the area sputtered by ... See full document

7

Indium coverage of the Si(111)  7×3  in surface

Indium coverage of the Si(111) 7×3 in surface

... √7 × √3 surfaces, respectively, In is the energy of the bulk In and is the number of In atoms in the system. The deep minimum at 2.4 ML observed in Fig. 5(a) clearly indicates a double-layer coverage of 2.4 ... See full document

16

Surface phonons of the Si(111):In (4 x 1) and (8 x 2) phases

Surface phonons of the Si(111):In (4 x 1) and (8 x 2) phases

... published 7 November 2007 兲 The reversible phase transition of the Si111 兲 : In- 共 4 ⫻ 1 兲 surface has been studied using Raman spectroscopy and the symmetry, frequencies, and ... See full document

7

Islands and holes as measures of mass balance in growth of the (√3×√3)R30° phase of Ag on Si(111)

Islands and holes as measures of mass balance in growth of the (√3×√3)R30° phase of Ag on Si(111)

... of Si111 兲 - 共 77 兲 into the 共 冑 3 ⫻ 冑 3 兲 R30° phase of adsorbed Ag requires a change in the Si density, and causes formation of islands and holes at the ... See full document

9

Using surface and interface optics to probe the capping, with amorphous Si, of Au atom chains grown on vicinal Si(111)

Using surface and interface optics to probe the capping, with amorphous Si, of Au atom chains grown on vicinal Si(111)

... 2 phase [20]. In order to explore this further, RAS measurements from Si(557)-5 × 1-Au and Si(775)-5 × 2-Au are compared in figure ...Figure 3 shows that the step-modified bulk optical ... See full document

5

Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator

Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator

... energies of 70 and 94 eV suggests an indium content which is significantly higher than the x = 0.045 bulk crystals studied previously [14]. A simplistic quantification based on the ratio of peak areas and photoionization ... See full document

7

Abnormal behaviour of the resistive transition to the normal state in superconducting Nb-Ti tapes just below Hc2

Abnormal behaviour of the resistive transition to the normal state in superconducting Nb-Ti tapes just below Hc2

... It was reported earlier that similar abnormal hysteresis of VCCs with abovementioned features was observed on granular superconductors [8, 10, 11]. To explain the nature of this hysteresis two models were proposed: ... See full document

5

Reflectance anisotropy spectroscopy of Si(111) (3 x 1)Li and Ag surfaces

Reflectance anisotropy spectroscopy of Si(111) (3 x 1)Li and Ag surfaces

... Structures of the (3 × 1)Li and Ag and c(12 × 2)Ag phases obtained by total energy minimization are shown in Figs. 1 and 2. The spacing of Li or Ag atoms along the channels in the (3 × 1) phase is ... See full document

7

Evolution of the low temperature Fermi surface of superconducting FeSe1−xSx across a nematic phase transition

Evolution of the low temperature Fermi surface of superconducting FeSe1−xSx across a nematic phase transition

... plane Fermi momentum and c is the lattice parameter). This effect can be caused by an interference between two orbits, γ and δ , with very close frequencies (that cannot be separated by FFT due to a limited fi eld window ... See full document

7

Current–time characteristics of resistive superconducting fault current limiters

Current–time characteristics of resistive superconducting fault current limiters

... sharp transition between π /2 and 3π/4 is due to the combination of dc offset and current phase (α − φ ) which results in a relatively small area under the current curve (and therefore low energy ... See full document

6

The Influence of an Adsorbate Layer on Adatom Diffusion and Island Nucleation: Fe on Si(111) √3 x √3 Au

The Influence of an Adsorbate Layer on Adatom Diffusion and Island Nucleation: Fe on Si(111) √3 x √3 Au

... -Au surface structure exhibits a large density of domain walls separating the p ffiffiffi 3 p ffiffiffi 3 domains on the surface (see ...ffiffiffi 3 p ffiffiffi 3 reconstruction which explains the ... See full document

5

Modeling and Simulation of Resistive type Superconducting Fault Current Limiter

Modeling and Simulation of Resistive type Superconducting Fault Current Limiter

... In faulty condition the magnitude of fault current could be high as about 3 kA. This high magnitude of fault current has to be reduced within the rating of protective equipments. This can be achieved by ... See full document

5

Dynamics of Optically Generated Carriers in Si (100) and Si (111) Substrate Grown GaAs/AlGaAs Core Shell Nanowires

Dynamics of Optically Generated Carriers in Si (100) and Si (111) Substrate Grown GaAs/AlGaAs Core Shell Nanowires

... on Si (100) and Si (111) are shown in ...on Si (100) are believed to have grown in the four equivalent <111> directions, in- clined from the substrate surface, and ... See full document

5

Exploring phases of dense QCD with compact stars

Exploring phases of dense QCD with compact stars

... (CFL) phase in which the pairing is “perfect”, in the sense that all colors and flavors are involved in the condensate, is the ground state of matter ...CFL phase has very low heat capacity as well as ... See full document

11

Microcontroller Based Protection Relay for Agricultural Motor

Microcontroller Based Protection Relay for Agricultural Motor

... balanced 3 phase resistive load is connected with our system and the phase loss fault and phase imbalance are produced using a MCB, the LCD will display the actual value of the supply ... See full document

9

Shape stability of TiSi2 islands on Si (111)

Shape stability of TiSi2 islands on Si (111)

... on Si111 兲 surfaces is explored with real time ultraviolet photoelectron emission ...dilute surface distribution grow larger without island–island ...initial transition stage and remains ... See full document

5

Measurement of the Band Bending and Surface Dipole at Chemically Functionalized Si(111)/Vacuum Interfaces

Measurement of the Band Bending and Surface Dipole at Chemically Functionalized Si(111)/Vacuum Interfaces

... the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor ...by surface photovoltage (SPV) ... See full document

99

Power System Transient Stability Enhancement by Coordinated Control of SMES, SFCL &amp; UPFC

Power System Transient Stability Enhancement by Coordinated Control of SMES, SFCL & UPFC

... generation, or loss of a large load. The system response to such disturbances involves large excursions of generator rotor angles, power flows, bus voltages and other system variables. Stability is influenced by the non- ... See full document

5

Self assembly of Ni(II) porphine molecules on the Ag/Si(111) (root 3 x root 3) R30 degrees surface studied by STM/STS and LEED

Self assembly of Ni(II) porphine molecules on the Ag/Si(111) (root 3 x root 3) R30 degrees surface studied by STM/STS and LEED

... the surface and aligned along the close-packed direction of the ...√ 3 × √ 3)R30º surface shows two sets of diffraction spots each forming a hexagonal pattern (see figure ... See full document

8

Critical &amp;#64257;eld behavior and antiband instability under controlled surface electromigration on Si(111)

Critical &#64257;eld behavior and antiband instability under controlled surface electromigration on Si(111)

... slow surface adatom diffusion and fast kinetics at the ...vicinal surface with respect to the unavoidable fluctuations in the step density is determined by the sign of the parameter s = B 2 q 2 − B 4 q 4 ... See full document

6

Show all 10000 documents...