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high electron beam parameters

Determination of geometric parameters of gradient structures formed in optical glass by the electron beam method

Determination of geometric parameters of gradient structures formed in optical glass by the electron beam method

... the high accuracy of determining the refractive index n, which was confirmed by an alternative method for determining the refractive index, namely, by the goniometric ...a high convergence of the results of ...

5

Influence of low-temperature resistivity on fast electron transport in solids : scaling to fast ignition electron beam parameters

Influence of low-temperature resistivity on fast electron transport in solids : scaling to fast ignition electron beam parameters

... of high power laser-solid interactions, including ion acceleration [1, 2] and radiation production [3, ...an electron current of the order of giga-Amperes is required to propagate over a dis- tance of ...

8

The effect of high-energy electron beam on drawn and undrawn high density polyethylene fibers

The effect of high-energy electron beam on drawn and undrawn high density polyethylene fibers

... effective parameters which cause formation of bimodal endo- therms for HDPE irradiated in the presence of air are: scissions produced by the reaction of oxygen with radicals at the chain folds and reorganization ...

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Optimization aspects of the new nELBE photo-neutron source

Optimization aspects of the new nELBE photo-neutron source

... with high Brilliance and Low Emittance) at FZD [1] produces high brilliance electron beams with energies up to 40 MeV, intensities up to 1 mA and within a pulse width of less then 10 ...these ...

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Design of sub-Angstrom compact free-electron laser source

Design of sub-Angstrom compact free-electron laser source

... practical parameters to construct a compact sub−Angstrom Free Electron Laser (FEL) based on Compton ...picocoulomb electron bunch, enabling very low emittance and ultracold electron ...the ...

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SML resist processing for high aspect ratio and high sensitivity electron beam lithography

SML resist processing for high aspect ratio and high sensitivity electron beam lithography

... a high-aspect-ratio (AR) and high-resolution pat- terning ...Utilizing electron beam lithography (EBL) to fabricate such nanostructures further requires that the patterning be performed as ...

7

Surface Modification of Nanotitania Using High Energy Electron Beam Irradiation

Surface Modification of Nanotitania Using High Energy Electron Beam Irradiation

... several parameters such as initial particle size, initial phase, dopant concentration, reaction atmosphere and annealing temperature ...a high chemical stability but is less ...

5

Observations of the filamentation of high-intensity laser-produced electron beams

Observations of the filamentation of high-intensity laser-produced electron beams

... at high intensity, can po- tentially generate fast electron ...to high absorption and to collimation of fast electrons due to a geometrical “funnel” ...at high intensity, several ...

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Faraday-rotation self-interference method for electron beam duration measurement in the laser wakefield accelerator

Faraday-rotation self-interference method for electron beam duration measurement in the laser wakefield accelerator

... quasi-monoenergetic electron beams from LWFA are available using the steady laser equipment and gas ...4] Electron beams with GeV energy have also been demonstrated with self-injection[4, 5], ionization ...

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Efficiency Enhancement in a Pre Bunched Cerenkov Free Electron Laser

Efficiency Enhancement in a Pre Bunched Cerenkov Free Electron Laser

... free electron lasers for the generation of high gain radiation at high frequencies has been demonstrated by Freund et ...free electron laser with the pre-bunched beam combines the best ...

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ABSTRACT: With our previous publication, characterization of the high-power arc-jet plasma torch was

ABSTRACT: With our previous publication, characterization of the high-power arc-jet plasma torch was

... The electron temperature, electron density, plasma potential and electron and ion beam energy over an extremely wide range of parameters can be determined by Langmuir probe which ...

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Study and optimisation of undulator-based polarised positron sources for linear colliders

Study and optimisation of undulator-based polarised positron sources for linear colliders

... at high velocity (about 100 m/s at the rim) the energy in the pulse can be spread over a relatively large volume (compared to a stationary ...The beam energy at the location of the undulator in an ...

193

In-situ Electron Imaging for the Electron Beam Melting Process.

In-situ Electron Imaging for the Electron Beam Melting Process.

... the beam interacts with the target area interaction volume simulation software CASINO v2 is used to determine the take-off angle and the information depth of the apparatus (shown in Figure ...the beam ...

118

Electron Beam Induced Chemistry

Electron Beam Induced Chemistry

... results in unacceptable alterations in the optical properties of the structural quartz substrates onto which the masking layers are applied 12 . Introduction of a gaseous precursor can be used to increase the etch rate ...

132

High-purity Platinum for Microelectronics42-46

High-purity Platinum for Microelectronics42-46

... few high vapour pressure metals, the high vacuum required plays a major role in the purification process for most electron beam. floating zone operations[r] ...

5

Methods of targets’ characterization

Methods of targets’ characterization

... geometric parameters (distance source-detector, knife-edge aperture of the diaphragm, sample size) define precisely the solid angle and the silicon background is as low as ...

5

IMPROVEMENT OF OPTICAL CHARACTERISTICS OF COMPONENTS OF OPTOELECTRONIC DEVICES IN THE HARSH CONDITIONS OF THEIR FUNCTIONING BY USING ELECTRON BEAM TECHNOLOGY

IMPROVEMENT OF OPTICAL CHARACTERISTICS OF COMPONENTS OF OPTOELECTRONIC DEVICES IN THE HARSH CONDITIONS OF THEIR FUNCTIONING BY USING ELECTRON BEAM TECHNOLOGY

... the electron beam processing of elements from optical glass in the result of melting of their surface layers causes the orientation adjustment near the surface of the silicon-oxygen net of the glass, which ...

7

RADIATION-INDUCED EFFECTS IN CHALCOGENIDE-BASED MEMORY DEVICES AND FILMS

RADIATION-INDUCED EFFECTS IN CHALCOGENIDE-BASED MEMORY DEVICES AND FILMS

... Step (a), which is not applicable to the 1 st photolithography step, requires heating the 1165 Microposit Remover to 65 °C, in order to remove the photoresist from the previous photolithography step. The wafer was placed ...

126

Studies towards an upgraded 1.5 MW gyrotron for W7-X

Studies towards an upgraded 1.5 MW gyrotron for W7-X

... same electron beam radius, the stacked beam tunnel of the existing gyrotron could, in principle, be also used for the ...existing beam tunnel has shown satisfactory suppression of parasitic ...

6

Sample Pages. Andreas Gebhardt. Understanding Additive Manufacturing. Rapid Prototyping - Rapid Tooling - Rapid Manufacturing

Sample Pages. Andreas Gebhardt. Understanding Additive Manufacturing. Rapid Prototyping - Rapid Tooling - Rapid Manufacturing

... the high temperature system EOS 395 (2011) is currently the only commercial system that processes even high performance plastics (PEEK,) it marks a future ...

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