High-k gate dielectrics
Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS
... with high work function values such as Au are also not practical, for the same reasons as for ...metal gate with high-k gate dielectrics ...the gate work function on the ...
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Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.
... potential, gate leakage and frequency dispersion ...HfAlO gate dielectric on GaAs was investigated by subjecting the dielectric to high temperature annealing both before and after metal gate ...
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Interaction of Metal Gatew with High-K Gate Dielectrics in Advanced CMOS Devices
... [31] Hobbs, C.C.; Fonseca, L.R.C.; Knizhnik, A.; Dhandapani, V.; Samavedam, S.B.; Taylor, W.J.; Grant, J.M.; Dip, L.G.; Triyoso, D.H.; Hegde, R.I.; Gilmer, D.C.; Garcia, R.; Roan, D.; Lovejoy, M.L.; Rai, R.S.; Hebert, ...
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Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application
... reduced gate thickness and delay, but lead to increased gate-leakage current with thin dielectric ...2 dielectrics be replaced with novel dielectrics such as higher dielectric constant ...
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Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics
... the gate capacitance of MOS structures with high-K gate-dielectric materials to study the effects of different dielectric materials on the modeling of the gate capaci- ...
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Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition
... quality of instruction was quite good. During his first year attending the Ohio University Southern Campus, he had the pleasure of taking a chemistry class taught by Maurice Mitchell – a brilliant physical chemist who ...
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High-k Gate Dielectric Selection for Germanium-based CMOS Devices
... as gate dielectrics in Ge based CMOS devices. High‐k gate dielectrics provides the possibility to be used in such ...a high‐k/Ge stack are; low EOT and leakage ...
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Manuscript Title & Authors
... of k is not the only standard to examine the merits and demerits of high-k ...as high-k gate ...as high dielectric constant(~10-30) and wide forbidden band width(~5-7 eV) ...
5
Characterization of High-k Dielectrics and Interfaces on Device Reliability
... operation gate voltage, 1V proposed by roadmap projections for device at EOT of 1 nm ...the gate leakage current by trapping or Frenkel-Poole hopping process through high-k gate ...
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A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications
... the gate depletion effect, thermodynamic incompatibility with high-k gate dielectric is also an issue for poly-Si gate ...using high-k gate dielectrics ...
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Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity
... alternative high-k gate dielectrics that have been considered for advanced complementary metal–oxide–semiconductor ...alternative gate dielectrics requires a transition from a ...
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Device Fabrication and Characterization for Alternative Gate Stack Devices
... deposited high-K layers, it is suspected that defects and traps may also affect the conduction mechanism, ...many high-K materials and the need to achieve high mobility, most deposited ...
183
Fixed Charge Reduction and Tunneling in Stacked Dielectrics
... a high-k gate dielectric film, the results also gave a number of interesting insights into the mechanisms responsible for tunneling in high k ...the gate oxide stacks using C-V ...
102
Electrical characterization of different high k dielectrics with tungsten silicide in vertical double gate NMOS structure
... implantation was implemented in order to mitigate the short channel effects in MOSFET devices [17–19]. The sidewall spacers were then deposited in order to separate the two high dopant areas. It also acts as a ...
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Reactions for Yttrium Silicate High-k Dielectrics
... alternate high-k material to replace silicon dioxide as the gate dielectric in MOSFET technology is an arduous undertaking, and the ITRS has set an aggressive timetable for implementation for these ...
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The interfaces of lanthanum oxide based subnanometer EOT gate dielectrics
... the gate dielectric film should be scaled down to the subnanometer equivalent oxide thickness (EOT) range in order to have proper control of the channel current under a reasonable gate bias ...(RE)-based ...
5
Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications
... and gate applications both need alternate high-k dielectrics to achieve higher capacitance densities ...and gate applications are different ...the high-k/electrode ...
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Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications
... lanthanide-based high-κ dielectrics for high-end metal-oxide-semiconductor field effect transistor (MOSFET) ...and high thermodynamic stability in the silicate ...and high-temperature ...
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Characterization of High-k Gate Stacks in Metal-Oxide-Semiconductor Capacitors
... silicate dielectrics and their associated gate electrodes, especially when process optimization and thermal stability are at ...alternative gate dielectric ...
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Polycrystallization effects on the nanoscale electrical properties of high k dielectrics
... results suggest that the regions with a smaller conduc- tivity could be related to the grains in the polycrystalline structure: the nanocrystals are more insulating whereas the grain boundaries show a larger ...
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