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quantum-well semiconductor lasers

Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN

Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN

... multi quantum well semiconductor lasers based on GaN/InGaN in some applications like high density optical power and energy efficient lighting ...of quantum well lasers to ...

6

Properties of Buried Heterostructure Single Quantum Well (Al,Ga)As Lasers

Properties of Buried Heterostructure Single Quantum Well (Al,Ga)As Lasers

... Abstract Unlike conventional semiconductor lasers, single quantum well SQW lasers with high reflectivity end facet coatings have dramatically reduced threshold currents as a result of th[r] ...

170

Polarization fluctuations in vertical-cavity semiconductor lasers

Polarization fluctuations in vertical-cavity semiconductor lasers

... Equation ~ 2 ! shows how polarization fluctuations result from a balance between the stochastic driving force of polar- ization noise and the damping and spectral deformation caused by the various anisotropies. The ...

15

Vertical external cavity semiconductor lasers

Vertical external cavity semiconductor lasers

... The Garnache design was implemented in an MBE-grown InGaAs/GaAs VECSEL, which exhibited the power output characteristics shown in figure 3. Unlike the Kuznetsov device, this laser used no post-growth processing of any ...

11

Semiconductor Quantum Dot Lasers as Pulse Sources for High Bit Rate Data Transmission

Semiconductor Quantum Dot Lasers as Pulse Sources for High Bit Rate Data Transmission

... rates. Semiconductor lasers are becoming increasingly attractive and viable for such ...applications. Semiconductor lasers can be compact sources of picoseconds, high repetition rate pulses of ...

15

Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures

Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures

... ent operational wavelengths for example by using a figure of merit (FOM). The work in this thesis is not a comparison of devices designed for one particular application and as such a FOM is not practical in this ...

167

Photonic crystals as functional mirrors for semiconductor lasers

Photonic crystals as functional mirrors for semiconductor lasers

... 1305 nm. Figure 9.9 shows the output spectra and beam profiles over a range of pump currents for the device. The device has three distinct operating phases. The first and most obvious of these is the sub-threshold phase. ...

172

Investigation and Application of Microscale Semiconductor Lasers and Cavities

Investigation and Application of Microscale Semiconductor Lasers and Cavities

... in semiconductor device physics, all carried out in-house: design, fabrication, testing, and ...as well as the fabrication process development that is a combination of science and a finely tuned black ...

156

Optoelectronic Control of the Phase and Frequency of Semiconductor Lasers

Optoelectronic Control of the Phase and Frequency of Semiconductor Lasers

... the semiconductor quantum well media, the narrow linewidth of a single-mode SCL, and the ability to electronically control the lasing frequency using the injection current make the SCL an attractive ...

214

Frequency Noise Control of Heterogeneous Si/III V Lasers

Frequency Noise Control of Heterogeneous Si/III V Lasers

... the lasers possess reduced relaxation resonance frequencies, compared to the conventional III-V semiconductor ...intrinsic, quantum-limited Schawlow-Townes noise floor, which is due to the direct ...

148

THz Quantum-Cascade Lasers for Heterodyne Techniques

THz Quantum-Cascade Lasers for Heterodyne Techniques

... THz semiconductor lasers Semiconductor device requirements: ¥ Low enough energy level separation for THz photon emission ¥ More electrons at high energy than low energy i.e., a populatio[r] ...

29

Transfer printing of semiconductor nanowire lasers

Transfer printing of semiconductor nanowire lasers

... of semiconductor NW lasers onto different surfaces widely used in photonic ...NW lasers with different dimensions (with diameters ranging from 435 to 920 nm) onto polymer (PDMS), silica, silicon and ...

6

An evaluation of Cyclotron Effective Mass and Electron
g-factor in Semiconductor Quantum Well

An evaluation of Cyclotron Effective Mass and Electron g-factor in Semiconductor Quantum Well

... and also in the interpretation of experimental date in this research. These factors play an important role in the magneto-optical and magneto-transport studies optically detected nuclear response experiments, spin ...

8

AN EVALUATION OF CYCLOTRON EFFECTIVE MASS AND ELECTRON G-FACTOR IN SEMICONDUCTOR QUANTUM WELL

AN EVALUATION OF CYCLOTRON EFFECTIVE MASS AND ELECTRON G-FACTOR IN SEMICONDUCTOR QUANTUM WELL

... spin quantum beats, spin Raman scattering experiments and capacitance and energy ...contribution, quantum confinement and applications of hydrostatic pressure and external electric/magnetic field may ...

14

Microresonators for organic semiconductor and fluidic lasers

Microresonators for organic semiconductor and fluidic lasers

... Light-emitting organic semiconductors have been the subject of substantial theoretical and applied research over the past two decades. The discovery of efficient electroluminescence in small molecules [1] and conjugated ...

175

Dilute magnetic semiconductor quantum-well structures for 
magnetic field tunable far-infrared/terahertz absorption

Dilute magnetic semiconductor quantum-well structures for magnetic field tunable far-infrared/terahertz absorption

... pare quantum-well structures based upon these materials, op- erating as photodetectors, against bolometers, the latter has a very high responsivity at a few kelvin and does not require an external magnetic ...

9

laser3

laser3

... The semiconductor laser consists of a tiny block (about one square millimetre in area) of gallium arsenide (Fig). When the p- and n-type layers are formed in an intimate contact, the interface becomes a p-n ...

33

Temperature Dependent High Speed Dynamics of Terahertz Quantum Cascade Lasers

Temperature Dependent High Speed Dynamics of Terahertz Quantum Cascade Lasers

... The derivation of RRE parameters from full REs, fitting of polynomials to RRE data, and calculation of other structure- dependent items indicated in Table I, are a once-off process for each QCL structure. Once done, ...

9

Electronic and optical SESAM control in Cr⁴⁺:forsterite lasers

Electronic and optical SESAM control in Cr⁴⁺:forsterite lasers

... In the previous section about SESAM materials it was stated that recombi- nation can be aided by crystal defects in the semiconductor structure, and hence recovery times can be improved. Such defects may naturally ...

143

Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers

Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers

... Injection locking of semiconductor lasers has been actively investigated recently. Theoretical calculations show that it is possible to increase laser bandwidth and to reduce noise and chirp with proper ...

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