• No results found

semiconductor device

ASSEMBLY AND TEST PROCESS OPTIMIZATION FOR SCALABLE PACKAGE SEMICONDUCTOR DEVICE

ASSEMBLY AND TEST PROCESS OPTIMIZATION FOR SCALABLE PACKAGE SEMICONDUCTOR DEVICE

... Delinquency in view of customer or missed deliveries was the scenario encountered during the line stressing and ramp-up of Scalable Package Semiconductor Device (hereinafter referred to as Device ...

12

Power semiconductor device

Power semiconductor device

... power semiconductor devices and component parts thereof and which may be used instead of or in addition to features already described ...power semiconductor device may be used in combination with the ...

27

Characterization of Laser Micromachining Process for Low-k / Ultra Low-k Semiconductor Device

Characterization of Laser Micromachining Process for Low-k / Ultra Low-k Semiconductor Device

... This paper presents the development works of using a 355nm ultraviolet (UV) laser diode ablation process for low-k/ULK semiconductor device. The effects of laser micromachining parameters, i.e. laser power, ...

7

Optimization of Wafer Singulation Process on Copper/Low-k Materials for Semiconductor Device Assembly

Optimization of Wafer Singulation Process on Copper/Low-k Materials for Semiconductor Device Assembly

... many semiconductor industry participants as there are demands and needs to get low cost, high functioning, fast speed, high reliability and low interconnect delay package in the future ...the semiconductor ...

6

High power semiconductor device with integral heat sink

High power semiconductor device with integral heat sink

... power semiconductor device with integral heat sink capable of accommodating substantial heat flux on the order of one kw per ...the semiconductor and utilizes an AlN thin film of high purity to ...

11

Characterisation of III V quaternary multilayer semiconductor device materials by x ray diffraction

Characterisation of III V quaternary multilayer semiconductor device materials by x ray diffraction

... The total energy in an X-ray photon, being large, can produce a large number of charged ion pairs in a gas filled counter and a still larger number in a Ge semiconductor detector. Phosphors which convert X-rays ...

324

Micro Data Handling for nm Range Semiconductor Device Using High Resolution ADC

Micro Data Handling for nm Range Semiconductor Device Using High Resolution ADC

... ABSTRACT: In VLSI technology devices are fabricated using semiconductor materials like Si, GaAs have been scaled down in nm range. For these devices there is a need to monitor the voltage in µV range. The proposed ...

7

Study of Machine Learning algorithms for their use in Semiconductor Device Model Development.

Study of Machine Learning algorithms for their use in Semiconductor Device Model Development.

... There are two main approaches for parameter extraction: global optimization and local opti- mization. Global optimization aims to minimize average error between simulated and measured data. In local optimization, ...

63

Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

... proposed device con- sists of a set of nonlinear second-order partial differential equations which are solved on uniform mesh using im- plicit finite difference ...

7

Development of Nanosphere Lithography for Semiconductor Device Applications

Development of Nanosphere Lithography for Semiconductor Device Applications

... that device effectively outputs can be calculated by finding the ratio of the surface area of the cap of such cone, and the surface area of a sphere with equivalent ...

55

THz Quantum-Cascade Lasers for Heterodyne Techniques

THz Quantum-Cascade Lasers for Heterodyne Techniques

... THz semiconductor lasers Semiconductor device requirements: ¥ Low enough energy level separation for THz photon emission ¥ More electrons at high energy than low energy i.e., a populatio[r] ...

29

Designing Nanomaterials For Electronic And Optoelectronic Devices Through Charge Carrier Control

Designing Nanomaterials For Electronic And Optoelectronic Devices Through Charge Carrier Control

... Colloidal semiconductor nanocrystals (NCs) have been shown to be promising materials for electronic, 1 optoelectronic 2–4 and thermoelectric 5 applications, because of their tunable electronic and optical ...

229

Simulating nanoscale semiconductor devices

Simulating nanoscale semiconductor devices

... The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small ...

14

Three Stage Cascaded Multilevel Inverter using Pulse Width Modulation Technique

Three Stage Cascaded Multilevel Inverter using Pulse Width Modulation Technique

... a semiconductor device which is used to convert the fixed DC voltage into symmetrical AC voltage without changing the ...power semiconductor switches in the inverter to select one or more of multi dc ...

7

Ultra Thin Body 22nm SOI N-MOSFET (The Effect Of Sidewall Spacer Oxide Thickness To The Device Performance)

Ultra Thin Body 22nm SOI N-MOSFET (The Effect Of Sidewall Spacer Oxide Thickness To The Device Performance)

... a semiconductor device that provide a better performance and flexibility compare to any other conventional MOSFET ...in semiconductor manufacturing, especially microelectronics, to reduce parasitic ...

24

Emitter Turn-off Thyristor (ETO) - A High Power Semiconductor Switch

Emitter Turn-off Thyristor (ETO) - A High Power Semiconductor Switch

... power semiconductor switch which combines the advantages of Gate Turn-off Thyristor’s (GTO) high voltage and current capability and MOS easy gate ...power device in high power, smart control ...power ...

10

Metal Gate Process Refining Using Gate First And Gate Last Technology For 22nm N-MOSFET

Metal Gate Process Refining Using Gate First And Gate Last Technology For 22nm N-MOSFET

... the semiconductor device fabrication process, the need to use very low voltages, and with poorer electrical performance, it is necessary to redesign the ...

24

Effect of Temperature Dependence on Electrical Characterization of p n GaN Diode Fabricated by RF Magnetron Sputtering

Effect of Temperature Dependence on Electrical Characterization of p n GaN Diode Fabricated by RF Magnetron Sputtering

... Surface root-mean-square (rms) roughness of Mg-GaN and GaN films was evaluated by atomic force micro- scopy (AFM, Dimension Icon, Bruker). Before testing TEM images, the FIB system was used to cut samples in p-n GaN ...

9

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler Nordheim tunneling device

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler Nordheim tunneling device

... latter device is based on gate modulation of Fowler–Nordheim (F–N) tun- neling [7] between a metal source and drain through an insulating body of approximately 10 nm thickness as shown in ...the device are ...

10

Digital Light Processing and its Future Applications

Digital Light Processing and its Future Applications

... Abstract- Electronic projection display technology had its origin in the Oil film projector system. Developed in the early 1940s oil film projectors have been the workhorse for applications that require projection ...

8

Show all 8966 documents...

Related subjects