Si/SiGe quantum well structures
Electron transport in n-doped Si/SiGe quantum cascade structures
... terahertz quantum cascade lasers, 1 Si/SiGe quantum cascade structures are attracting considerable attention as a very promising technology for the same ...the Si/SiGe ...
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n-Si/SiGe quantum cascade structures for THz emission
... THz quantum cascade lasers, Si/SiGe quantum cascade structures are attracting considerable attention as a very promising technology for the same ...the Si/SiGe system, the ...
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Electric field domains in p-Si/SiGe quantum cascade structures
... semiconductor quantum-well cascade structures, as are used nowadays in intersubband infrared photode- tectors [1], [2], lasers [3], and Bloch oscillator type devices [4], [5] are well known to ...
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Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures
... the SiGe alloy, presents some new results on its electronic and optical proper- ties, and discusses the approach that has been followed to model quantum wells containing SiGe layers for applications ...
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Transport properties of modulation-doped Si/SiGe quantum well structures
... entary quantum m echanical description of the m odulation- doped n- and p-type ...in SiGe heterostructures and its effect on the band structure is one of the m ost im portant factors to determ ine the ...
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Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation
... asymmetric Si/SiGe heterostruc- tures, with both abrupt and graded ...device structures than has been achieved previ- ...as well as with published tight-binding results, with DVEMA de- manding ...
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Exploring Si/SiGe quantum-well thin-film thermoelectric devices using TCAD simulation
... The discussion this far has examined the QW films as stand-alone structures. TEG devices consist of a large number of alternate n- and p-type thermoelectric elements, which are connected electrically in series by ...
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Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures
... p-Si/ SiGe quantum cascade struc- tures has been developed and used to study carrier distribu- tions and carrier heating ...plex structures, the carrier temperatures of subbands in adja- cent ...
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Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector
... the SiGe islands and the bulk Ge were extracted from the simulation as shown in ...the SiGe structures. However, alloying Si to Ge which is SiGe (Eg = ...the quantum confinement ...
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Simulated effect of epitaxial growth variations on THz emission and gain of SiGe/Ge quantum cascade structures
... are well developed and ...and SiGe alloys on Si substrates [1]. Quantum Cascade Lasers (QCLs) are suitable for efficient generation of radiation at terahertz ...200K. Si has a higher ...
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Magnetotransport phenomena in modulation doped n-channel Si/Si0.7Ge0.3 quantum well structures
... a Si/SiGe HBT is schem atically show n in figure ...l SiGe is used for th e base, the e m itte r an d th e collector are m ade of Si, an d th u s th e Si/SiGe HBT contains two ...
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Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness
... In summary, we presented a theoretical and experi- mental study of the non-radiative lifetime of interwell transitions between heavy-hole subbands spaced by less than the (Ge-Ge) optical phonon energy in two differ- ent ...
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Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography
... in Si as reported for many different SiGe structures ...bulk Si. Therefore, the peaks between the Si TO peak and P line, which are amplified as shown in Figure 4b, can be attributed to ...
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Heating Effect of Polycrystalline SiGe/Si Thin Films on Phase Transition of GeSbTe Films
... and Si films by typical steps such as via opens and ...the SiGe/Si multilayers were evaluated by ...contact structures and their width was fi xed to 200 ...contact structures was directly ...
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Engineering the exciton linewidth in II VI quantum well structures
... or 2-D binding energy is four times greater than the bulk or 3-D case.3 In forming real quantum well materials, we wish to choose structures such that the binding energy is substantially[r] ...
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Theoretical studies of wavepacket propagation in semiconductor quantum well structures
... For double barrier systems containing one resonance the behaviour of the resonant current can be predicted using a model transmission coefficient which contains the main features of a re[r] ...
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Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well
... More careful examination of the data in Fig. 3(a) also reveals an extra photoresistance feature which occurs close to the cyclotron resonance (cf. ↓). While the exact origin of this feature is unclear at this point, its ...
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Nanogrids and Beehive Like Nanostructures Formed by Plasma Etching the Self Organized SiGe Islands
... beehive Si nanostructures. Briefly, prior to the growth of SiGe thin film, the surface of Si substrate was cleaned by the standard Radio Corporation of America (RCA) proce- dures ...The Si ...
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Quantum well engineering in InGaN/GaN core-shell nanorod structures
... in quantum well thickness for semi-polar [13] and the fact that the changed InN incorporation may make the growth conditions less optimised for one of the faces (in this case the ...
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Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
... Ge/Si quantum dots ...on SiGe pseudosubstrate or virtual substrate (VS) were reported ...tum well devices and thus the possibility to improve their ...relaxed Si 1−x Ge x layer (x = ...
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